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The DOI matches its Crossref record; 30 of the 30 references it cites were found in a registry or an index.

Discovery of robust in-plane ferroelectricity in atomic-thick SnTe

Open access
Chang, Kai, Liu, Junwei, Lin, Haicheng, Wang, Na, Zhao, Kun, Zhang, Anmin, Jin, Feng, Zhong, Yong, Hu, Xiaopeng, Duan, Wenhui, Zhang, Qingming, Fu, Liang, Xue, Qi-Kun, Chen, Xi, Ji, Shuai-Hua·2016·Science

Abstract

Thinning a ferroelectric makes it better: As a ferroelectric material becomes thinner, the temperature below which it develops its permanent electrical polarization usually decreases. Chang et al. fabricated high-quality thin films of SnTe that, in contrast to this conventional wisdom, had a considerably higher transition temperature than that of the material in bulk (see the Perspective by Kooi and Noheda). This was true even for single-unit cell films, whereas only slightly thicker films became ferroelectric above room temperature. This finding may enable the miniaturization of ferroelectric devices. Science , this issue p. 274 ; see also p. 221

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Crossref · 10.1126/science.aad8609

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Metadata

Authors
Chang, K., Liu, J., Lin, H., Wang, N., Zhao, K., Zhang, A., Jin, F., Zhong, Y., Hu, X., Duan, W., Zhang, Q., Fu, L., Xue, Q.-K., Chen, X., & Ji, S.-H.
Venue
Science
Published
2016-07-15
Volume
353
Issue
6296
Pages
274-278
ISSN
  • 0036-8075 (ISSN-L)
  • 1095-9203
OpenAlex
W2465845169
Cited by
1,151
References
30
FWCI
28.67
Type
journal article
Language
en
Open access
green

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CoChat. (2026). Citation check: Discovery of robust in-plane ferroelectricity in atomic-thick SnTe. https://app.cochat.ai/papers/10.1126/science.aad8609
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Chang, K., Liu, J., Lin, H., Wang, N., Zhao, K., Zhang, A., Jin, F., Zhong, Y., Hu, X., Duan, W., Zhang, Q., Fu, L., Xue, Q.-K., Chen, X., & Ji, S.-H. (2016). Discovery of robust in-plane ferroelectricity in atomic-thick SnTe. Science. https://doi.org/10.1126/science.aad8609

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