The DOI matches its Crossref record; 4 of the 4 references it cites were found in a registry or an index.
Extremely Low On-Resistance and High Breakdown Voltage Observed in Vertical GaN Schottky Barrier Diodes with High-Mobility Drift Layers on Low-Dislocation-Density GaN Substrates
Open accessAbstract
Vertical GaN Schottky barrier diodes (SBDs) were fabricated on freestanding GaN substrates with low dislocation density. High quality n-GaN drift-layer with an electron mobility of 930 cm 2 V -1 s -1 was obtained by optimizing the growth conditions by reducing the intensity of yellow luminescence using conventional photoluminescence measurements. The specific on-resistance ( R on A ) and the breakdown voltage ( V B ) of the SBDs were 0.71 mΩ cm 2 and over 1100 V, respectively. The figure of merit ( V B 2 / R on A ) was 1.7 GW/cm 2 , which is the highest value among previously reported SBDs for both GaN and SiC.
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Citations
Cites
Gallium vacancies and the yellow luminescence in GaN
Neugebauer, J., & Van de Walle, C. G. (1996) · Applied Physics Letters · doi:10.1063/1.117767 · Cited by 1,140
Mechanism of Yellow Luminescence in GaN
Ogino, T., & Aoki, M. (1980) · Japanese Journal of Applied Physics · doi:10.1143/jjap.19.2395 · Cited by 686
Seager, C. H., Wright, A. F., Yu, J., & Götz, W. (2002) · Journal of Applied Physics · doi:10.1063/1.1518794 · Cited by 253
Theoretical limit estimation of lateral wide band-gap semiconductor power-switching device
Saito, W., Omura, I., Ogura, T., & Ohashi, H. (2004) · Solid-State Electronics · doi:10.1016/j.sse.2003.10.003 · Cited by 144
Cited by
The 2018 GaN power electronics roadmap
Amano, H., Baines, Y., Beam, E., Borga, M., Bouchet, T., Chalker, P. R., Charles, M., Chen, K. J., Chowdhury, N., Chu, R., et al. (2018) · Journal of Physics D: Applied Physics · doi:10.1088/1361-6463/aaaf9d · Cited by 1,313
GaN-based power devices: Physics, reliability, and perspectives
Meneghini, M., De Santi, C., Abid, I., Buffolo, M., Cioni, M., Khadar, R. A., Nela, L., Zagni, N., Chini, A., Medjdoub, F., et al. (2021) · Journal of Applied Physics · doi:10.1063/5.0061354 · Cited by 723
Recent progress of GaN power devices for automotive applications
Kachi, T. (2014) · Japanese Journal of Applied Physics · doi:10.7567/jjap.53.100210 · Cited by 360
Recent Advances in GaN‐Based Power HEMT Devices
He, J., Cheng, W., Wang, Q., Cheng, K., Yu, H., & Chai, Y. (2021) · Advanced Electronic Materials · doi:10.1002/aelm.202001045 · Cited by 258
Metadata
- Authors
- Saitoh, Y., Sumiyoshi, K., Okada, M., Horii, T., Miyazaki, T., Shiomi, H., Ueno, M., Katayama, K., Kiyama, M., & Nakamura, T.
- Venue
- Applied Physics Express
- Publisher
- IOP Publishing
- Published
- 2010-07-16
- Volume
- 3
- Issue
- 8
- Pages
- 081001
- ISSN
- 1882-0778 (ISSN-L)
- 1882-0786
- OpenAlex
- W1985600998
- Cited by
- 267
- References
- 4
- FWCI
- 3.33
- Type
- journal article
- Language
- en
- Open access
- bronze
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- CoChat. (2026). Citation check: Extremely Low On-Resistance and High Breakdown Voltage Observed in Vertical GaN Schottky Barrier Diodes with High-Mobility Drift Layers on Low-Dislocation-Density GaN Substrates. https://app.cochat.ai/papers/10.1143/apex.3.081001
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- Saitoh, Y., Sumiyoshi, K., Okada, M., Horii, T., Miyazaki, T., Shiomi, H., Ueno, M., Katayama, K., Kiyama, M., & Nakamura, T. (2010). Extremely Low On-Resistance and High Breakdown Voltage Observed in Vertical GaN Schottky Barrier Diodes with High-Mobility Drift Layers on Low-Dislocation-Density GaN Substrates. Applied Physics Express. https://doi.org/10.1143/apex.3.081001
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