The DOI matches its Crossref record; 221 of the 221 references it cites were found in a registry or an index.
Radiation Chemistry in Chemically Amplified Resists
Open accessAbstract
Historically, in the mass production of semiconductor devices, exposure tools have been repeatedly replaced with those with a shorter wavelength to meet the resolution requirements projected in the International Technology Roadmap for Semiconductors issued by the Semiconductor Industry Association. After ArF immersion lithography, extreme ultraviolet (EUV; 92.5 eV) radiation is expected to be used as an exposure tool for the mass production at or below the 22 nm technology node. If realized, 92.5 eV EUV will be the first ionizing radiation used for the mass production of semiconductor devices. In EUV lithography, chemically amplified resists, which have been the standard resists for mass production since the use of KrF lithography, will be used to meet the sensitivity requirement. Above the ionization energy of resist materials, the fundamental science of imaging, however, changes from photochemistry to radiation chemistry. In this paper, we review the radiation chemistry of materials related to chemically amplified resists. The imaging mechanisms from energy deposition to proton migration in resist materials are discussed.
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“This cascade of secondary electrons leads to chemical reactions when using EUV radiation.”
From Extreme ultraviolet lithography (2024) · cites this paper as [57]
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Cites
Henke, B. L., Gullikson, E. M., & Davis, J. C. (1993) · Atomic Data and Nuclear Data Tables · doi:10.1006/adnd.1993.1013 · Cited by 6,386
Tanuma, S., Powell, C. J., & Penn, D. R. (1994) · Surface and Interface Analysis · doi:10.1002/sia.740210302 · Cited by 2,823
Onsager, L. (1938) · Physical Review · doi:10.1103/physrev.54.554 · Cited by 1,889
Lias, S. G., Liebman, J. F., & Levin, R. D. (1984) · Journal of Physical and Chemical Reference Data · doi:10.1063/1.555719 · Cited by 1,329
Radiation chemistry of polymeric systems
CHAPIRO, A. (1962) · Interscience eBooks · Cited by 1,156
Proximity effect in electron-beam lithography
Chang, T. H. P. (1975) · Journal of Vacuum Science and Technology · doi:10.1116/1.568515 · Cited by 550
BORDWELL, F. G., & Cheng, J. (1991) · Journal of the American Chemical Society · doi:10.1021/ja00005a042 · Cited by 465
Chemical amplification in the design of dry developing resist materials
Itô, H., & Willson, C. G. (1983) · Polymer Engineering and Science · doi:10.1002/pen.760231807 · Cited by 463
Chemical Amplification Resists for Microlithography
Ito, H. (2005) · Advances in polymer science · doi:10.1007/b97574 · Cited by 434
Land, E. J., & Ebert, M. (1967) · Transactions of the Faraday Society · doi:10.1039/tf9676301181 · Cited by 356
Research works printed but not linked: 6
- 1989, Polym. Mater. Sci. Eng., 61, 269
- 1987, Int. J. Radiat. Appl. Instrum., Part C, 30, 83
- 1990, Int. J. Radiat. Appl. Instrum., Part C, 36, 195
- 1989, Int. J. Radiat. Appl. Instrum., Part C, 34, 145
- 1989, Int. J. Radiat. Appl. Instrum., Part C, 34, 553
- 1963, J. Polym. Sci., Part A, 1, 1079
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Recent Progress of Nonchemically‐Amplified Resists for High‐Resolution Lithography †
Li, H., Peng, R., Liu, Z., Lian, P., Chen, J., Yu, T., Zeng, Y., Wang, S., Guo, X., Hu, R., et al. (2026) · Chinese Journal of Chemistry · doi:10.1002/cjoc.70573 · Cited by 2
Metadata
- Authors
- Kozawa, T., & Tagawa, S.
- Affiliations
- The Institute of Scientific and Industrial Research, The University of Osaka (JP)
- Venue
- Japanese Journal of Applied Physics
- Publisher
- IOP Publishing
- Published
- 2010-03-01
- Volume
- 49
- Issue
- 3R
- Pages
- 030001
- ISSN
- 0021-4922 (ISSN-L)
- 1347-4065
- OpenAlex
- W2027253590
- Cited by
- 360
- References
- 221
- Citations by year
- 2026: 23 · 2025: 31 · 2024: 38 · 2023: 22 · 2022: 21 · 2021: 17 · 2020: 12 · 2019: 18 · 2018: 16 · 2017: 16 · 2016: 31 · 2015: 24 · 2014: 27 · 2013: 21 · 2012: 14
- FWCI
- 16.14
- Type
- journal article
- Language
- en
- Open access
- bronze
- doi.org
- Licence
- Locations
- Japanese Journal of Applied Physics (publishedVersion)
- Funders
- Japan Society for the Promotion of Science (21656238)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Advancements in Photolithography Techniques
- Physical Sciences › Chemistry › Organic Chemistry › Photopolymerization techniques and applications
- Physical Sciences › Materials Science › Polymers and Plastics › Synthesis and properties of polymers
- Keywords
- radiation chemistry, chemically amplified resists, EUV lithography, proton migration, energy deposition, ionizing radiation, KrF lithography, ArF immersion lithography, semiconductor manufacturing
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