Power cycling methods for SiC MOSFETs
Abstract
The evaluation of power cycling results needs correct measurement of the course of thermal resistance. Hence an accurate online measurement of the junction temperature is necessary. Different measurement and power cycling methods were evaluated. The method of measuring the voltage drop of the SiC MOSFET body diode pn-junction at low measurement current with sufficient negative gate-voltage was found most suitable one. In addition power losses during power cycling test should be generated in forward MOSFET-mode at high positive gate-voltage. Otherwise test results will not be application conform.
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In 2019, the European Center for Power Electronics (ECPE) released AQG 324, a guideline on the qualification of power modules for use in power electronics converter units in automotive applications.
“In 2019, the European Center for Power Electronics (ECPE) has released AQG 324 that is a guideline on the 'Qualification of Power Modules for use in Power Electronics Converter Units in Automotive Application' [61].”
From Reliability of Power Electronic Systems for EV/HEV Applications (2021) · cites this paper as [61]
Cites
Reliability and performance limitations in SiC power devices
Singh, R. (2006) · Microelectronics Reliability · doi:10.1016/j.microrel.2005.10.013 · Cited by 284 · see citing works
Power cycling results for different control strategies
Scheuermann, U., & Schuler, S. C. (2010) · Microelectronics Reliability · doi:10.1016/j.microrel.2010.07.135 · Cited by 92 · see citing works
Power cycling capability of Modules with SiC-Diodes
Herold, C., Schaefer, M., Sauerland, F., Poller, T., Lutz, J., & Schilling, O. (2014) · Cited by 74 · see citing works
Self-citationRequirements in power cycling for precise lifetime estimation
Herold, C., Franke, J., Bhojani, R., et al. (2016) · Microelectronics Reliability · doi:10.1016/j.microrel.2015.12.035 · Cited by 61 · see citing works
Self-citationPower cycling issues and challenges of SiC-MOSFET power modules in high temperature conditions
Ibrahim, A., Ousten, J.-P., Lallemand, R., & Khatir, Z. (2015) · Microelectronics Reliability · doi:10.1016/j.microrel.2015.11.030 · Cited by 54 · see citing works
An approach to lifetime estimation of SiC MOSFETs subjected to thermal stress
ten Have, R., Vermulst, B. J. D., & van Duivenbode, J. (2015) · TU/e Research Portal · Cited by 9 · see citing works
High temperature die-attach materials for aerospace power electronics: Lifetime tests and modeling
Hutzler, A., Tokarski, A., & Schletz, A. (2015) · Proceedings - IEEE Aerospace Conference · doi:10.1109/aero.2015.7118949 · Cited by 8 · see citing works
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Reliability of Power Electronic Systems for EV/HEV Applications
Blaabjerg, F., Wang, H., Vernica, I., Liu, B., & Davari, P. (2021) · Proceedings of the IEEE · doi:10.1109/jproc.2020.3031041 · Cited by 249 · see citing works
Evaluation of Aging's Effect on Temperature-Sensitive Electrical Parameters in SiC mosfets
Yang, F., Ugur, E., & Akin, B. (2020) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2019.2950311 · Cited by 121 · see citing works
- Authors
- Herold, C., Sun, J., Seidel, P., Tinschert, L., & Lutz, J.
- Affiliations
- Chemnitz University of Technology (DE)
- Venue
- 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD)
- Publisher
- IEEE
- Published
- 2017-05
- Pages
- 367-370
- ISSN
- 1063-6854 (ISSN-L)
- OpenAlex
- W2737101607
- Cited by
- 117
- References
- 7
- Citations by year
- 2026: 7 · 2025: 13 · 2024: 17 · 2023: 18 · 2022: 7 · 2021: 10 · 2020: 15 · 2019: 16 · 2018: 13 · 2017: 1
- FWCI
- 17.41
- Type
- conference paper
- Language
- en
- Open access
- closed
- Locations
- IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs (publishedVersion)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Silicon Carbide Semiconductor Technologies
- Physical Sciences › Physics and Astronomy › Condensed Matter Physics › GaN-based semiconductor devices and materials
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Semiconductor materials and devices
- Keywords
- SiC MOSFET, power cycling, thermal resistance, junction temperature measurement, p-n junction, gate voltage, power losses, reliability testing
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