The DOI matches its Crossref record; 16 of the 16 references it cites were found in a registry or an index.
InAlGaN/GaN HEMTs at Cryogenic Temperatures
Open accessAbstract
We report on the electron transport properties of two-dimensional electron gas confined in a quaternary barrier InAlGaN/AlN/GaN heterostructure down to cryogenic temperatures for the first time. A state-of-the-art electron mobility of 7340 cm2·V−1·s−1 combined with a sheet carrier density of 1.93 × 1013 cm−2 leading to a remarkably low sheet resistance of 44 Ω/□ are measured at 4 K. A strong improvement of Direct current (DC) and Radio frequency (RF) characteristics is observed at low temperatures. The excellent current and power gain cutoff frequencies (fT/fmax) of 65/180 GHz and 95/265 GHz at room temperature and 77 K, respectively, using a 0.12 μm technology confirmed the outstanding 2DEG properties.
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“whereas III-V direct band gap semiconductor devices like Ga-As based pHEMTs are one of the most preferred choice for developing cryogenic amplifiers [12-28].”
From Development and Characterization of a Cryogenic Tuned Amplifier for Penning Trap Applications (2025) · cites this paper as [15]
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Cites
Power electronics on InAlN/(In)GaN: Prospect for a record performance
Kuzmik, J. (2001) · IEEE Electron Device Letters · doi:10.1109/55.962646 · Cited by 573
Very-high power density AlGaN/GaN HEMTs
Wu, Y.-F., Kapolnek, D., Ibbetson, J. P., Parikh, P., Keller, B. P., & Mishra, U. K. (2001) · IEEE Transactions on Electron Devices · doi:10.1109/16.906455 · Cited by 568
High electron mobility lattice-matched AlInN∕GaN field-effect transistor heterostructures
Gonschorek, M., Carlin, J.-F., Feltin, E., Py, M. A., & Grandjean, N. (2006) · Applied Physics Letters · doi:10.1063/1.2335390 · Cited by 319
Tülek, R., Ilgaz, A., Gökden, S., Teke, A., Öztürk, M. K., Kasap, M., Özçelik, S., Arslan, E., & Özbay, E. (2009) · Journal of Applied Physics · doi:10.1063/1.2996281 · Cited by 96
220-GHz Quaternary Barrier InAlGaN/AlN/GaN HEMTs
Wang, R., Li, G., Verma, J. K., Sensale‐Rodriguez, B., Fang, T., Guo, J., Hu, Z., Laboutin, O. A., Cao, Y., Johnson, W. J., et al. (2011) · IEEE Electron Device Letters · doi:10.1109/led.2011.2158288 · Cited by 90
Study on quaternary AlInGaN/GaN HFETs grown on sapphire substrates
Ketteniss, N., Khoshroo, L. R., Eickelkamp, M., Heuken, M., Kalisch, H., Jansen, R. A., & Vescan, A. (2010) · Semiconductor Science and Technology · doi:10.1088/0268-1242/25/7/075013 · Cited by 71
Collapse-free high power InAlGaN/GaN-HEMT with 3 W/mm at 96 GHz
Makiyama, K., Ozaki, S., Ohki, T., Okamoto, N., Minoura, Y., Niida, Y., Kamada, Y., JOSHIN, K., Watanabe, K., & Miyamoto, Y. (2015) · Technical digest - International Electron Devices Meeting/Technical digest · doi:10.1109/iedm.2015.7409659 · Cited by 71
GaN-Based Submicrometer HEMTs With Lattice-Matched InAlGaN Barrier Grown by MBE
Lim, T., Aidam, R., Waltereit, P., Henkel, T., Quay, R., Lozar, R., Maier, T., Kirste, L., & Ambacher, O. (2010) · IEEE Electron Device Letters · doi:10.1109/led.2010.2048996 · Cited by 62
InAlN - A new barrier material for GaN-based HEMTs
Kohn, E., & Medjdoub, F. (2007) · International Workshop on Physics of Semiconductor Devices · doi:10.1109/iwpsd.2007.4472506 · Cited by 33
Self-citationHigh electron mobility in high-polarization sub-10 nm barrier thickness InAlGaN/GaN heterostructure
Medjdoub, F., Kabouche, R., Linge, A., Grimbert, B., Zegaoui, M., Gamarra, P., Lacam, C., Tordjman, M., & di Forte‐Poisson, M. (2015) · Applied Physics Express · doi:10.7567/apex.8.101001 · Cited by 31
Self-citationEnhancement-mode quaternary AlInGaN/GaN HEMT with non-recessed-gate on sapphire substrate
Liu, Y., Egawa, T., & Jiang, H. X. (2006) · Electronics Letters · doi:10.1049/el:20061150 · Cited by 31
GaN HEMTs with quaternary In0.05Al0.75Ga0.2N Schottky barrier layer
Hwang, J. H., Kim, S., Woo, J. M., Hong, S., & Jang, J. (2016) · physica status solidi (a) · doi:10.1002/pssa.201532566 · Cited by 20
Electrical characteristics of AlInN/GaN HEMTs under cryogenic operation
Zhang, X., Wang, L., Liu, J., Wei, L. C., & Xu, J. H. (2013) · Chinese Physics B · doi:10.1088/1674-1056/22/1/017202 · Cited by 16
Effect of temperature on cryogenic characteristics of AlGaN/GaN MIS‐HEMTs
Endoh, A., Watanabe, I., Yamashita, Y., Mimura, T., & Matsui, T. (2009) · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · doi:10.1002/pssc.200880803 · Cited by 10
Time delay analysis in high speed gate-recessed E-mode InAlN HEMTs
Sensale‐Rodriguez, B., Guo, J., Wang, R., Verma, J. K., Li, G., Fang, T., Beam, E., Ketterson, A., Schuette, M. L., Saunier, P., et al. (2012) · Solid-State Electronics · doi:10.1016/j.sse.2012.10.004 · Cited by 9
Ultra‐thin barrier quaternary InAlGaN HEMTs with state of the art sheet resistance
Gao, X., Pan, M., Gorka, D., Oliver, M., Schuette, M. L., Ketterson, A., & Saunier, P. (2014) · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · doi:10.1002/pssc.201300669 · Cited by 5
Cited by
Temperature-dependent photodetection behavior of AlGaN/GaN-based ultraviolet phototransistors
Yang, L., Zhang, H., Sun, Y., Hu, K., Xing, Z., Liang, K., Fang, S., Wang, D., Yu, H., Kang, Y., et al. (2022) · Applied Physics Letters · doi:10.1063/5.0083171 · Cited by 80
Ren, R., Gui, H., Zhang, Z., Chen, R., Niu, J., Wang, F., Tolbert, L. M., Costinett, D. J., Blalock, B. J., & Choi, B. B. (2019) · IEEE Journal of Emerging and Selected Topics in Power Electronics · doi:10.1109/jestpe.2019.2949953 · Cited by 62
Understanding Interfaces in AlScN/GaN Heterostructures
Streicher, I., Leone, S., Zhang, M., Tlemçani, T. S., Bah, M., Straňák, P., Kirste, L., Prescher, M., Yassine, A., Alquier, D., et al. (2024) · Advanced Functional Materials · doi:10.1002/adfm.202403027 · Cited by 51
Electrical characterization of GaN Schottky barrier diode at cryogenic temperatures
Chen, J., Zhu, M., Lü, X., & Zou, X. (2020) · Applied Physics Letters · doi:10.1063/1.5131337 · Cited by 33
Jiya, I. N., & Gouws, R. (2020) · Micromachines · doi:10.3390/mi11121116 · Cited by 34
Metadata
- Authors
- Dogmus, E., Kabouche, R., Lepilliet, S., Linge, A., Zegaoui, M., Ben-Ammar, H., Chauvat, M.-P., Ruterana, P., Gamarra, P., Lacam, C., Tordjman, M., & Medjdoub, F.
- Affiliations
- Institut d'Electronique, de Microélectronique et de Nanotechnologie (FR)
- Institute of Electronics, Microelectronics and Nanotechnology (IEMN), Av. Poincaré, Villeneuve d’Ascq 59652, France
- Centre de recherche sur les Ions, les MAtériaux et la Photonique, Caen 14000, France
- Centre de Recherche sur les Ions, les Matériaux et la Photonique (FR)
- Laboratoire Mécanique des Solides (FR)
- Corresponding author
- Medjdoub, Farid
- Venue
- Electronics
- Publisher
- MDPI AG
- Published
- 2016-06-22
- Volume
- 5
- Issue
- 2
- Pages
- 31
- ISSN
- 2079-9292 (ISSN-L)
- OpenAlex
- W2470601434
- Cited by
- 37
- References
- 16
- Citations by year
- 2026: 1 · 2025: 6 · 2024: 7 · 2023: 1 · 2022: 4 · 2021: 4 · 2020: 4 · 2019: 3 · 2018: 2 · 2017: 5
- FWCI
- 1.98
- Type
- journal article
- Language
- en
- Open access
- gold
- doi.org
- Licence
- Locations
- Electronics (publishedVersion, cc-by)
- HAL (submittedVersion, cc-by)
- DOAJ (DOAJ: Directory of Open Access Journals) (submittedVersion, cc-by-sa)
- Funders
- Agence Nationale de la Recherche (ANR-14-CE26-0022)
- Topics
- Physical Sciences › Physics and Astronomy › Condensed Matter Physics › GaN-based semiconductor devices and materials
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Silicon Carbide Semiconductor Technologies
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Advancements in Semiconductor Devices and Circuit Design
- Keywords
- two-dimensional electron gas, cryogenic temperatures, electron mobility, sheet resistance, AlN barrier, cutoff frequency, RF characteristics, low-temperature electron transport, high electron mobility transistors
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