The DOI matches its Crossref record; 19 of the 19 references it cites were found in a registry or an index.
High-power EUV free-electron laser for future lithography
Open accessAbstract
The development of a high-power EUV light source is very important in EUV lithography to overcome the stochastic effects for higher throughput and higher numerical aperture (NA) in the future. We have designed and studied a high-power EUV free-electron laser (FEL) based on energy-recovery linac (ERL) for future lithography. We show that the EUV-FEL light source has many advantages, such as extremely high EUV power without tin debris, upgradability to a Beyond EUV (BEUV) FEL, polarization controllability for high-NA lithography, low electricity consumption, and low construction and running costs per scanner, as compared to the laser-produced plasma source used for the present EUV lithography exposure tool. Furthermore, the demonstration of proof of concept (PoC) of the EUV-FEL is in progress using the IR-FEL in the Compact ERL (cERL) at the High Energy Accelerator Research Organization. In this paper, we present the EUV-FEL light source for future lithography and progress in the PoC of the EUV-FEL.
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EUV free electron laser sources have been proposed and would be capable of powering several scanners simultaneously with a power of 1 kW.
“As an alternative to laser -produced plasma sources, EUV free electron laser (FEL) sources 28 , 29 have also been proposed and would be capable of powering several scanners simultaneously with a power of 1 kW.”
From Extreme ultraviolet lithography (2024) · cites this paper as [28]
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Cites
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Stochastic effects in EUV lithography
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Benefiting from polarization effects on high-NA imaging
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Development of the superconducting rf 2-cell cavity for cERL injector at KEK
Watanabe, K., Noguchi, S., Kakō, E., et al. (2013) · Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment · doi:10.1016/j.nima.2013.02.035 · Cited by 28
Considerations for a free-electron laser-based extreme-ultraviolet lithography program
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Energy Recovery Linacs for Light Sources
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Self-citationThe endless progression of Moore’s law
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S2E simulation of an ERL-based high-power EUV-FEL source for lithography
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Self-citationRecent Developments and Operational Status of the Compact ERL at KEK
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Self-citationInjector Design Towards ERL-Based EUV-FEL for Lithography
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Self-citationReconstruction and beam-transport study of the cERL dump line for high-power IR-FEL operation
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Extreme ultraviolet lithography
Kazazis, D., Santaclara, J. G., van Schoot, J., Mochi, I., & Ekinci, Y. (2024) · Nature Reviews Methods Primers · doi:10.1038/s43586-024-00361-z · Cited by 149
Metadata
- Authors
- Nakamura, N., Kato, R., Sakai, H., Tsuchiya, K., Tanimoto, Y., Honda, Y., Miyajima, T., Shimada, M., Tanikawa, T., Tanaka, O. A., Obina, T., & Kawata, H.
- Affiliations
- High Energy Accelerator Research Organization (JP)
- Corresponding author
- Nakamura, Norio
- ORCID
- Venue
- Japanese Journal of Applied Physics
- Publisher
- IOP Publishing
- Published
- 2023-04-19
- Volume
- 62
- Issue
- SG
- Pages
- SG0809
- ISSN
- 0021-4922 (ISSN-L)
- 1347-4065
- OpenAlex
- W4323305926
- Cited by
- 31
- References
- 19
- Citations by year
- 2026: 8 · 2025: 13 · 2024: 9 · 2023: 1
- FWCI
- 2.31
- Type
- journal article
- Language
- en
- Open access
- bronze
- doi.org
- Licence
- Locations
- Japanese Journal of Applied Physics (publishedVersion)
- Institutional Repositories DataBase (IRDB) (submittedVersion)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Particle Accelerators and Free-Electron Lasers
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Advancements in Photolithography Techniques
- Physical Sciences › Physics and Astronomy › Nuclear and High Energy Physics › Particle accelerators and beam dynamics
- Keywords
- EUV free-electron laser, EUV lithography, energy recovery linac, high-power light source, polarization control, numerical aperture, proof of concept
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