Utilization of SiC MOSFET Body Diode in Hard Switching Applications
Open accessAbstract
This work discusses the possibility of using SiC MOSFET body diode in switching power conversion applications, focusing on performance and reliability aspects.
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The CMB test accelerates internal PiN diode degradation by body diode conduction.
“The chopper mode bias (CMB) test accelerates the internal PiN diode degradation by body diode conduction [62], [63].”
From AC Power Cycling Test Setup and Condition Monitoring Tools for SiC-Based Traction Inverters (2023) · cites this paper as [63]
The common precursor of body diode degradation is body diode forward voltage (Vf), but Vf can also change due to package and gate oxide degradation, making it challenging to extract Vf patterns related to body diode degradation.
“The common precursor of body diode degradation is body diode forward voltage ( Vf ). However, Vf can also change due to the package and gate oxide degradation which makes it challenging to extract Vf patterns related to body diode degradation [63].”
From AC Power Cycling Test Setup and Condition Monitoring Tools for SiC-Based Traction Inverters (2023) · cites this paper as [63]
Cites
Degradation of hexagonal silicon-carbide-based bipolar devices
Skowroński, M., & Ha, S. Y. (2006) · Journal of Applied Physics · doi:10.1063/1.2159578 · Cited by 477 · see citing works
A New Degradation Mechanism in High-Voltage SiC Power MOSFETs
Agarwal, A., Husna, F., Haney, S. K., & Ryu, S. (2007) · IEEE Electron Device Letters · doi:10.1109/led.2007.897861 · Cited by 300 · see citing works
Materials Issues for Generation IV Systems
Ghetta, V., Gorse, D., Mazière, D., et al. (2008) · NATO science for peace and security series. B, Physics and biophysics · doi:10.1007/978-1-4020-8422-5 · Cited by 92 · see citing works
Bipolar Degradation of High Voltage 4H-SiC p-i-n Diodes in Pulse Regime
Levinshteĭn, M. E., Ivanov, P. A., Palmour, J. W., et al. (2011) · Materials science forum · doi:10.4028/www.scientific.net/msf.679-680.539 · Cited by 9 · see citing works
Some Aspects of the Structural, Mechanical and Electronic Properties of SiC
Pirouz, P. (2008) · NATO science for peace and security series. B, Physics and biophysics · doi:10.1007/978-1-4020-8422-5_17 · Cited by 3 · see citing works
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Review and analysis of SiC MOSFETs’ ruggedness and reliability
Wang, J., & Jiang, X. (2020) · IET Power Electronics · doi:10.1049/iet-pel.2019.0587 · Cited by 221 · see citing works
Evaluation of Aging's Effect on Temperature-Sensitive Electrical Parameters in SiC mosfets
Yang, F., Ugur, E., & Akin, B. (2020) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2019.2950311 · Cited by 121 · see citing works
AC Power Cycling Test Setup and Condition Monitoring Tools for SiC-Based Traction Inverters
Farhadi, M., Vankayalapati, B. T., Sajadi, R., & Akin, B. (2023) · IEEE Transactions on Vehicular Technology · doi:10.1109/tvt.2023.3271251 · Cited by 24 · see citing works
“However, V f can also change due to the package and gate oxide degradation which makes it challenging to extract V f patterns related to body diode degradation [63].”
Background
- Authors
- Bolotnikov, A., Glaser, J., Nasadoski, J., Losee, P., Klopman, S., Permuy, A., & Stevanovic, L.
- Affiliations
- General Electric (United States) (US)
- General Electric Global Research Center
- Corresponding author
- Bolotnikov, Alexander
- Venue
- Materials Science Forum
- Publisher
- Trans Tech Publications, Ltd.
- Published
- 2014-02-26
- Volume
- 778-780
- Pages
- 947-950
- ISSN
- 0255-5476 (ISSN-L)
- 1662-9752
- OpenAlex
- W1970492692
- Cited by
- 17
- References
- 5
- Citations by year
- 2026: 1 · 2025: 1 · 2024: 1 · 2023: 2 · 2022: 1 · 2021: 2 · 2020: 1 · 2019: 4 · 2016: 1 · 2015: 2 · 2014: 1
- FWCI
- 0.71
- Type
- journal article
- Language
- en
- Open access
- hybrid
- doi.org
- Licence
- Locations
- Materials science forum (publishedVersion, cc-by)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Silicon Carbide Semiconductor Technologies
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Advanced DC-DC Converters
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Multilevel Inverters and Converters
- Keywords
- SiC MOSFET, body diode, hard switching, power semiconductor reliability
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Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.
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