Wong, H.-S. Philip

Metal–Oxide RRAM

Wong, H.-S. P., Lee, H.-Y., Yu, S., Chen, Y.-S., Wu, Y., Chen, P.-S., Lee, B., Chen, F. T., & Tsai, M.-J. (2012) · Proceedings of the IEEE

Advanced Memory and Neural ComputingFerroelectric and Negative Capacitance Devices

Cited by 2,757

In-memory computing with resistive switching devices

Ielmini, D., & Wong, H.-S. P. (2018) · Nature Electronics

Advanced Memory and Neural ComputingFerroelectric and Negative Capacitance Devices

Cited by 2,298

Nanoelectronic programmable synapses based on phase change materials for brain-inspired computing

Kuzum, D., Jeyasingh, R. G. D., Lee, B., & Wong, H.-S. P. (2012) · Nano Letters

Advanced Memory and Neural ComputingPhase-change materials and chalcogenides

Cited by 1,267

A compute-in-memory chip based on resistive random-access memory

Wan, W., Kubendran, R., Schaefer, C., Eryilmaz, S. B., Zhang, W., Wu, D., Deiss, S., Raina, P., Qian, H., Gao, B., et al. (2022) · Nature

Advanced Memory and Neural ComputingFerroelectric and Negative Capacitance Devices

Cited by 943

Face classification using electronic synapses

Yao, P., Wu, H., Gao, B., Eryilmaz, S. B., Huang, X., Zhang, W., Zhang, Q., Deng, N., Shi, L., Wong, H.-S. P., et al. (2017) · Nature Communications

Advanced Memory and Neural ComputingNeural Networks and Reservoir Computing

Cited by 909

Three-dimensional integration of nanotechnologies for computing and data storage on a single chip

Shulaker, M. M., Hills, G., Park, R. S., Howe, R. T., Saraswat, K., Wong, H.-S. P., & Mitra, S. (2017) · Nature

Advanced Memory and Neural Computing3D IC and TSV technologies

Cited by 866

An Electronic Synapse Device Based on Metal Oxide Resistive Switching Memory for Neuromorphic Computation

Yu, S., Wu, Y., Jeyasingh, R., Kuzum, D., & Wong, H.-S. P. (2011) · IEEE Transactions on Electron Devices

Advanced Memory and Neural ComputingFerroelectric and Negative Capacitance Devices

Cited by 805

Artificial optic-neural synapse for colored and color-mixed pattern recognition

Seo, S., Jo, S.-H., Kim, S., Shim, J., Oh, S., Kim, J.-H., Heo, K., Choi, J.-W., Choi, C., Oh, S., et al. (2018) · Nature Communications

Advanced Memory and Neural Computing2D Materials and Applications

Cited by 731

On the Switching Parameter Variation of Metal-Oxide RRAM—Part I: Physical Modeling and Simulation Methodology

Guan, X., Yu, S., & Wong, H.-S. P. (2012) · IEEE Transactions on Electron Devices

Advanced Memory and Neural ComputingFerroelectric and Negative Capacitance Devices

Cited by 355

A neuromorphic visual system using RRAM synaptic devices with Sub-pJ energy and tolerance to variability: Experimental characterization and large-scale modeling

Yu, S., Gao, B., Fang, Z., Yu, H., Kang, J., & Wong, H.-S. P. (2012) · 2012 International Electron Devices Meeting

Advanced Memory and Neural ComputingNeural Networks and Reservoir Computing

Cited by 213

Brain-like associative learning using a nanoscale non-volatile phase change synaptic device array

Eryilmaz, S. B., Kuzum, D., Jeyasingh, R., Kim, S., BrightSky, M., Lam, C., & Wong, H.-S. P. (2014) · Frontiers in Neuroscience

Advanced Memory and Neural ComputingPhase-change materials and chalcogenides

Cited by 205

Ultra-Low-Energy Three-Dimensional Oxide-Based Electronic Synapses for Implementation of Robust High-Accuracy Neuromorphic Computation Systems

Gao, B., Bi, Y., Chen, H.-Y., Liu, R., Huang, P., Chen, B., Liu, L., Liu, X., Yu, S., Wong, H.-S. P., et al. (2014) · ACS Nano

Advanced Memory and Neural ComputingFerroelectric and Negative Capacitance Devices

Cited by 188

HfOx based vertical resistive random access memory for cost-effective 3D cross-point architecture without cell selector

Chen, H.-Y., Yu, S., Gao, B., Huang, P., Kang, J., & Wong, H.-S. P. (2012) · 2012 International Electron Devices Meeting

Advanced Memory and Neural ComputingFerroelectric and Negative Capacitance Devices

Cited by 144

Hyperdimensional computing with 3D VRRAM in-memory kernels: Device-architecture co-design for energy-efficient, error-resilient language recognition

Li, H., Wu, T. F., Rahimi, A., Li, K.-S., Rusch, M., Lin, C.-H., Hsu, J.-L., Sabry, M. M., Eryilmaz, S. B., Sohn, J., et al. (2016) · 2016 IEEE International Electron Devices Meeting (IEDM)

Advanced Memory and Neural ComputingLow-power high-performance VLSI design

Cited by 136

Real-Time Observation of the Electrode-Size-Dependent Evolution Dynamics of the Conducting Filaments in a SiO2 Layer

Yuan, F., Zhang, Z., Liu, C., Zhou, F., Yau, H. M., Lu, W., Qiu, X., Wong, H.-S. P., Dai, J., & Chai, Y. (2017) · ACS Nano

Advanced Memory and Neural ComputingFerroelectric and Negative Capacitance Devices

Cited by 99

Four-layer 3D vertical RRAM integrated with FinFET as a versatile computing unit for brain-inspired cognitive information processing

Li, H., Li, K.-S., Lin, C.-H., Hsu, J.-L., Chiu, W.-C., Chen, M.-C., Wu, T.-T., Sohn, J., Eryilmaz, S. B., Shieh, J.-M., et al. (2016) · 2016 IEEE Symposium on VLSI Technology

Advanced Memory and Neural ComputingFerroelectric and Negative Capacitance Devices

Cited by 75

Effect of Wordline/Bitline Scaling on the Performance, Energy Consumption, and Reliability of Cross-Point Memory Array

Liang, J., Yeh, S., Wong, S. S., & Wong, H.-S. P. (2013) · ACM Journal on Emerging Technologies in Computing Systems

Advanced Memory and Neural ComputingLow-power high-performance VLSI design

Cited by 71

Design and optimization methodology for 3D RRAM arrays

Deng, Y., Chen, H.-Y., Gao, B., Yu, S., Wu, S.-C., Zhao, L., Chen, B., Jiang, Z., Liu, X., Hou, T.-H., et al. (2013) · 2013 IEEE International Electron Devices Meeting

Advanced Memory and Neural ComputingFerroelectric and Negative Capacitance Devices

Cited by 55

Experimental demonstration of array-level learning with phase change synaptic devices

Eryilmaz, S. B., Kuzum, D., Jeyasingh, R. G. D., Kim, S., BrightSky, M., Lam, C., & Wong, H.-S. P. (2013) · 2013 IEEE International Electron Devices Meeting

Advanced Memory and Neural ComputingPhase-change materials and chalcogenides

Cited by 51

A Voltage-Mode Sensing Scheme with Differential-Row Weight Mapping for Energy-Efficient RRAM-Based In-Memory Computing

Wan, W., Kubendran, R., Gao, B., Joshi, S., Raina, P., Wu, H., Cauwenberghs, G., & Wong, H. S. P. (2020) · 2020 IEEE Symposium on VLSI Technology

Advanced Memory and Neural ComputingLow-power high-performance VLSI design

Cited by 42

Training a Probabilistic Graphical Model With Resistive Switching Electronic Synapses

Eryilmaz, S. B., Neftci, E., Joshi, S., Kim, S., BrightSky, M., Lung, H.-L., Lam, C., Cauwenberghs, G., & Wong, H.-S. P. (2016) · IEEE Transactions on Electron Devices

Advanced Memory and Neural ComputingFerroelectric and Negative Capacitance Devices

Cited by 34