Yang, Fei
The University of Texas at Dallas
7 papers on CoChatORCID 0000-0001-6751-1954
Most cited papers
- Verified
Degradation Assessment and Precursor Identification for SiC MOSFETs Under High Temp Cycling
Ugur, E., Yang, F., Pu, S., Zhao, S., & Akin, B. (2019) · IEEE Transactions on Industry Applications
Silicon Carbide Semiconductor TechnologiesRadiation Effects in Electronics
Cited by 159
- Verified
A New Complete Condition Monitoring Method for SiC Power MOSFETs
Ugur, E., Xu, C., Yang, F., Pu, S., & Akin, B. (2021) · IEEE Transactions on Industrial Electronics
Silicon Carbide Semiconductor TechnologiesRadiation Effects in Electronics
Cited by 126
- Verified
Evaluation of Aging's Effect on Temperature-Sensitive Electrical Parameters in SiC mosfets
Yang, F., Ugur, E., & Akin, B. (2020) · IEEE Transactions on Power Electronics
Silicon Carbide Semiconductor TechnologiesRadiation Effects in Electronics
Cited by 121
- Verified
Temperature-Independent Gate-Oxide Degradation Monitoring of SiC MOSFETs Based on Junction Capacitances
Farhadi, M., Yang, F., Pu, S., Vankayalapati, B. T., & Akin, B. (2021) · IEEE Transactions on Power Electronics
Silicon Carbide Semiconductor TechnologiesSemiconductor materials and devices
Cited by 93
- Verified
A Practical On-Board SiC MOSFET Condition Monitoring Technique for Aging Detection
Pu, S., Yang, F., Vankayalapati, B. T., Ugur, E., Xu, C., & Akin, B. (2020) · IEEE Transactions on Industry Applications
Silicon Carbide Semiconductor TechnologiesRadiation Effects in Electronics
Cited by 75
- Verified
Characterization of Threshold Voltage Instability Under Off-State Drain Stress and Its Impact on p-GaN HEMT Performance
Yang, F., Xu, C., & Akin, B. (2021) · IEEE Journal of Emerging and Selected Topics in Power Electronics
GaN-based semiconductor devices and materialsSilicon Carbide Semiconductor Technologies
Cited by 53
- Verified
Development of a low-inductance SiC trench MOSFET power module for high-frequency application
Wang, Z. J., Yang, F., Campbell, S., & Chinthavali, M. (2018) · 2018 IEEE Applied Power Electronics Conference and Exposition (APEC)
Silicon Carbide Semiconductor TechnologiesElectromagnetic Compatibility and Noise Suppression
Cited by 16
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