A Practical On-Board SiC MOSFET Condition Monitoring Technique for Aging Detection
Abstract
In this article, an in situ SiC mosfet degradation monitoring method using readily available converter sensors is presented. Device's drain-source resistance in saturation and ohmic regions are employed as aging precursors to, respectively, indicate die and package-related degradations. The presented findings in this article are essential for low-cost and practical early warning systems in power electronics applications. To verify the effectiveness of the proposed method, a number of power-cycling tests are conducted to analyze aging process and fatigue mechanism. Device static parameters are measured throughout accelerated aging tests and the physical causes behind them are discussed in detail. It is shown that the drain-source resistance within saturation region at low gate bias can be used to indicate die-related degradation. Similarly, at full positive gate bias, device on-state drain-source resistance can be used to detect package-related degradation. In order to find out optimal variables such as applied gate bias, pulse duration, etc., a comprehensive single pulse test is conducted and the results are reported. Finally, the proposed degradation monitoring method is experimentally validated in the context of a three-phase inverter considering different sensor configurations and load types.
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Device thermal impedance, saturation current, and miller capacitance are other parameters for aging monitoring.
“The device's thermal impedance [75], saturation current [76], and miller capacitance [77] are other parameters for aging monitoring.”
From AC Power Cycling Test Setup and Condition Monitoring Tools for SiC-Based Traction Inverters (2023) · cites this paper as [76]
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Farhadi, M., Yang, F., Pu, S., Vankayalapati, B. T., & Akin, B. (2021) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2021.3049394 · Cited by 93 · see citing works
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“The device’s thermal impedance [75], saturation current [76], and miller capacitance [77] are other parameters for aging monitoring.”
BackgroundSelf-citation
- Authors
- Pu, S., Yang, F., Vankayalapati, B. T., Ugur, E., Xu, C., & Akin, B.
- Affiliations
- The University of Texas at Dallas (US)
- Venue
- IEEE Transactions on Industry Applications
- Published
- 2020-05
- Volume
- 56
- Issue
- 3
- Pages
- 2828-2839
- ISSN
- 0093-9994 (ISSN-L)
- 1939-9367
- OpenAlex
- W3012534034
- Cited by
- 75
- References
- 28
- Citations by year
- 2026: 13 · 2025: 12 · 2024: 18 · 2023: 11 · 2022: 4 · 2021: 12 · 2020: 5
- FWCI
- 2.75
- Type
- journal article
- Language
- en
- Open access
- closed
- Licence
- Locations
- IEEE Transactions on Industry Applications (publishedVersion)
- Funders
- National Science Foundation (1454311)
- Semiconductor Research Corporation (SRC)/Texas Analog Center of Excellence (2712.026)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Silicon Carbide Semiconductor Technologies
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Radiation Effects in Electronics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Multilevel Inverters and Converters
- Keywords
- SiC MOSFET, condition monitoring, saturation region, power cycling, fatigue mechanisms, gate bias, three-phase inverter, early warning systems
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