The DOI matches its Crossref record; 79 of the 79 references it cites were found in a registry or an index.
Organic Resistive Memory Devices: Performance Enhancement, Integration, and Advanced Architectures
Abstract
In recent years, organic resistive memory devices in which active organic materials possess at least two stable resistance states have been extensively investigated for their promising memory potential. From the perspective of device fabrication, their advantages include simple device structures, low fabrication costs, and printability. Furthermore, their exceptional electrical performances such as a nondestructive reading process, nonvolatility, a high ON/OFF ratio, and a fast switching speed meet the requirements for viable memory technologies. Full understanding of the underlying physics behind the interesting phenomena is still challenging. However, many studies have provided useful insights into scientific and technical issues surrounding organic resistive memory. This Feature Article begins with a summary on general characteristics of the materials, device structures, and switching mechanisms used in organic resistive devices. Strategies for performance enhancement, integration, and advanced architectures in these devices are also presented, which may open a way toward practically applicable organic memory devices.
Overview
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Integrity signals
Registry
Cites
Statistics
Verification
Claims the paper makes
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Self-check
Percentages, sums and reported differences re-computed from the paper’s own numbers.
The self-check needs the paper’s full text.
Citations
Cites
Nanoionics-based resistive switching memories
Waser, R., & Aono, M. (2007) · Nature Materials · doi:10.1038/nmat2023 · Cited by 4,923
(2005) · Physics of Semiconductor Devices · doi:10.1007/0-306-47622-3_5 · Cited by 3,968
“Synthetic Metals”: A Novel Role for Organic Polymers (Nobel Lecture)
MacDiarmid, A. G. (2001) · Angewandte Chemie International Edition · doi:10.1002/1521-3773(20010716)40:14<2581::aid-anie2581>3.0.co;2-2 · Cited by 2,025
Ferroelectric thin films: Review of materials, properties, and applications
Setter, N., Damjanovic, D., Eng, L., Fox, G., Gevorgian, S., Hong, S., Kingon, A., Kohlstedt, H., Park, N. Y., Stephenson, G. B., et al. (2006) · Journal of Applied Physics · doi:10.1063/1.2336999 · Cited by 1,907
Electrons in disordered structures
Mott, N. F. (1967) · Advances in Physics · doi:10.1080/00018736700101265 · Cited by 1,765
Semiconducting and Metallic Polymers: The Fourth Generation of Polymeric Materials (Nobel Lecture)
Heeger, A. J. (2001) · Angewandte Chemie International Edition · doi:10.1002/1521-3773(20010716)40:14<2591::aid-anie2591>3.0.co;2-0 · Cited by 1,493
Conductance Switching in Single Molecules Through Conformational Changes
Donhauser, Z. J., Mantooth, B. A., Kelly, K. F., Bumm, L. A., Monnell, J. D., Stapleton, J. J., Price, D. W., Rawlett, A. M., Allara, D. L., Tour, J. M., et al. (2001) · Science · doi:10.1126/science.1060294 · Cited by 1,246
Space-Charge-Limited Currents in Organic Crystals
Mark, P., & Helfrich, W. (1962) · Journal of Applied Physics · doi:10.1063/1.1728487 · Cited by 1,007
Nonvolatile Memory Elements Based on Organic Materials
Scott, J. C., & Bozano, L. D. (2007) · Advanced Materials · doi:10.1002/adma.200602564 · Cited by 1,001
Polymer electronic memories: Materials, devices and mechanisms
Ling, Q.-D., Liaw, D.-J., Zhu, C., Chan, D. S.-H., Kang, E.-T., & Neoh, K.-G. (2008) · Progress in Polymer Science · doi:10.1016/j.progpolymsci.2008.08.001 · Cited by 985
Cited by
The Future of Memristors: Materials Engineering and Neural Networks
Sun, K., Chen, J., & Yan, X. (2021) · Advanced Functional Materials · doi:10.1002/adfm.202006773 · Cited by 482
Status and prospects of ZnO-based resistive switching memory devices
Simanjuntak, F. M., Panda, D., Wei, K.-H., & Tseng, T.-Y. (2016) · Nanoscale Research Letters · doi:10.1186/s11671-016-1570-y · Cited by 244
Ji, Y., Zeigler, D. F., Lee, D. S., Choi, H., Jen, A. K.-Y., Ko, H. C., & Kim, T.-W. (2013) · Nature Communications · doi:10.1038/ncomms3707 · Cited by 177
Self-citationReal-time finger motion recognition using skin-conformable electronics
Cho, H., Lee, I., Jang, J., Kim, J.-H., Lee, H., Park, S., & Wang, G. (2023) · Nature Electronics · doi:10.1038/s41928-023-01012-z · Cited by 87
Metadata
- Authors
- Cho, B., Song, S., Ji, Y., Kim, T., & Lee, T.
- Venue
- Advanced Functional Materials
- Publisher
- Wiley
- Published
- 2011-07-08
- Volume
- 21
- Issue
- 15
- Pages
- 2806-2829
- ISSN
- 1616-301X (ISSN-L)
- 1616-3028
- OpenAlex
- W1991578486
- Cited by
- 489
- References
- 79
- FWCI
- 23.84
- Type
- journal article
- Language
- en
- Open access
- closed
About these checks
Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.
Statistics and arithmetic are recomputed, not judged.
Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.
What counts as a claim ›How we measure confidence ›How we check this ›
Are you an author, or do you see a problem with this page? Request a review
How to cite
Cite CoChat for the checks on this page, and the paper for its own findings.
- This page
- CoChat. (2026). Citation check: Organic Resistive Memory Devices: Performance Enhancement, Integration, and Advanced Architectures. https://app.cochat.ai/papers/10.1002/adfm.201100686
- The paper
- Cho, B., Song, S., Ji, Y., Kim, T., & Lee, T. (2011). Organic Resistive Memory Devices: Performance Enhancement, Integration, and Advanced Architectures. Advanced Functional Materials. https://doi.org/10.1002/adfm.201100686
Data sources
Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.
