The DOI matches its Crossref record; 15 of the 15 references it cites were found in a registry or an index.
Room‐Temperature Ferroelectricity in Hexagonally Layered α‐In2Se3 Nanoflakes down to the Monolayer Limit
Abstract
2D ferroelectric material has emerged as an attractive building block for high‐density data storage nanodevices. Although monolayer van der Waals ferroelectrics have been theoretically predicted, a key experimental breakthrough for such calculations is still not realized. Here, hexagonally stacking α‐In 2 Se 3 nanoflake, a rarely studied van der Waals polymorph, is reported to exhibit out‐of‐plane (OOP) and in‐plane (IP) ferroelectricity at room temperature. Ferroelectric multidomain states in a hexagonal α‐In 2 Se 3 nanoflake with uniform thickness can survive to 6 nm. Most strikingly, the electric‐field‐induced polarization switching and hysteresis loop are, respectively, observed down to the bilayer and monolayer (≈1.2 nm) thicknesses, which designates it as the thinnest layered ferroelectric and verifies the corresponding theoretical calculation. In addition, two types of ferroelectric nanodevices employing the OOP and IP polarizations in 2H α‐In 2 Se 3 are developed, which are applicable for nonvolatile memories and heterostructure‐based nanoelectronics/optoelectronics.
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Self-citationChanthbouala, A., Garcia, V., Cherifi, R. O., Bouzehouane, K., Fusil, S., Moya, X., Xavier, S., Yamada, H., Deranlot, C., Mathur, N. D., et al. (2012) · Nature Materials · doi:10.1038/nmat3415 · Cited by 1,220
Giant tunnel electroresistance for non-destructive readout of ferroelectric states
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Out-of-Plane Piezoelectricity and Ferroelectricity in Layered α-In2Se3 Nanoflakes
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Self-citationMechanical Writing of Ferroelectric Polarization
Lu, H., Bark, C.-W., Esque de los Ojos, D., Alcala, J., Eom, C. B., Catalan, G., & Gruverman, A. (2012) · Science · doi:10.1126/science.1218693 · Cited by 812
Ferroelectricity and Phase Transitions in Monolayer Group-IV Monochalcogenides
Fei, R., Kang, W., & Yang, L. (2016) · Physical Review Letters · doi:10.1103/physrevlett.117.097601 · Cited by 673
Solid-state memories based on ferroelectric tunnel junctions
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Extraordinary Photoresponse in Two-Dimensional In2Se3 Nanosheets
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Yin, Y. W., Burton, J. D., Kim, Y.-M., Borisevich, A. Y., Pennycook, S. J., Yang, S. M., Noh, T. W., Gruverman, A., Li, X. G., Tsymbal, E. Y., et al. (2013) · Nature Materials · doi:10.1038/nmat3564 · Cited by 327
Cited by
Recent Progress in Two‐Dimensional Ferroelectric Materials
Guan, Z., Hu, H., Shen, X., Xiang, P., Zhong, N., Chu, J., & Duan, C. (2020) · Advanced Electronic Materials · doi:10.1002/aelm.201900818 · Cited by 409
Xue, F., He, X., Wang, Z., Retamal, J. R. D., Chai, Z., Jing, L., Zhang, C., Fang, H., Chai, Y., Jiang, T., et al. (2021) · Advanced Materials · doi:10.1002/adma.202008709 · Cited by 130
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Metadata
- Authors
- Xue, F., Hu, W., Lee, K., Lu, L., Zhang, J., Tang, H., Han, A., Hsu, W., Tu, S., Chang, W., Lien, C., He, J., Zhang, Z., Li, L., & Zhang, X.
- Venue
- Advanced Functional Materials
- Publisher
- Wiley
- Published
- 2018-10-21
- Volume
- 28
- Issue
- 50
- ISSN
- 1616-301X (ISSN-L)
- 1616-3028
- OpenAlex
- W2897661777
- Cited by
- 409
- References
- 15
- FWCI
- 9.40
- Type
- journal article
- Language
- en
- Open access
- closed
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- Xue, F., Hu, W., Lee, K., Lu, L., Zhang, J., Tang, H., Han, A., Hsu, W., Tu, S., Chang, W., Lien, C., He, J., Zhang, Z., Li, L., & Zhang, X. (2018). Room‐Temperature Ferroelectricity in Hexagonally Layered α‐In2Se3 Nanoflakes down to the Monolayer Limit. Advanced Functional Materials. https://doi.org/10.1002/adfm.201803738
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