Development of EUV interference lithography for 25 nm line/space patterns
Open accessAbstract
In this study, we present the performance of an extreme ultraviolet interference lithography (EUV-IL) setup that was reconstructed at Taiwan Light Source 21B2 EUV beamline in the National Synchrotron Radiation Research Center (NSRRC), Taiwan. An easy-to-perform fabrication method to produce a high-quality transmission grating mask and a simple design of experimental setup for EUV-IL were developed. The current EUV-IL setup is capable of fabricating line/space patterns down to 25 nm half-pitch in hydrogen silsesquioxane (HSQ) resist. Preliminary exposure results revealed that optimized slit width and exposure time significantly improved line/space pattern quality. The current EUV-IL tool at NSRRC can be used for nano-patterning and resist screening to advance the next generation of semiconductor devices.
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Extreme ultraviolet lithography
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- Authors
- Sahoo, A. K., Chen, P.-H., Lin, C.-H., Liu, R.-S., Lin, B.-J., Kao, T.-S., Chiu, P.-W., Huang, T.-P., Lai, W.-Y., Wang, J., Lee, Y.-Y., & Kuan, C.-K.
- Affiliations
- National Tsing Hua University (TW)
- National Cheng Kung University (TW)
- National Synchrotron Radiation Research Center (TW)
- Corresponding author
- Lin, C.-H.
- Liu, R.-S.
- Lin, B.-J.
- Venue
- Micro and Nano Engineering
- Publisher
- Elsevier BV
- Published
- 2023-09
- Volume
- 20
- Pages
- 100215
- ISSN
- 2590-0072 (ISSN-L)
- OpenAlex
- W4381251002
- Cited by
- 6
- References
- 39
- Citations by year
- 2026: 2 · 2025: 2 · 2024: 2
- FWCI
- 0.45
- Type
- journal article
- Language
- en
- Open access
- gold
- doi.org
- Licence
- Locations
- Micro and Nano Engineering (publishedVersion, cc-by)
- DOAJ (DOAJ: Directory of Open Access Journals) (submittedVersion, cc-by-sa)
- Funders
- Ministry of Science and Technology, Taiwan (MOST-108-2622-8-007-017, MOST-109-2622-8-007-022, MOST-110-2622-8-007-018, NSTC-111-2622-8-007-001)
- National Science and Technology Council
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Advancements in Photolithography Techniques
- Physical Sciences › Engineering › Biomedical Engineering › Nanofabrication and Lithography Techniques
- Physical Sciences › Physics and Astronomy › Radiation › Advanced X-ray Imaging Techniques
- Keywords
- EUV lithography, line/space patterning, hydrogen silsesquioxane resist, exposure time, nanopatterning, semiconductor manufacturing
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