The DOI matches its Crossref record; 50 of the 50 references it cites were found in a registry or an index.
Measurement of Lateral and Interfacial Thermal Conductivity of Single- and Bilayer MoS2 and MoSe2 Using Refined Optothermal Raman Technique
Open accessAbstract
Atomically thin materials such as graphene and semiconducting transition metal dichalcogenides (TMDCs) have attracted extensive interest in recent years, motivating investigation into multiple properties. In this work, we demonstrate a refined version of the optothermal Raman technique to measure the thermal transport properties of two TMDC materials, MoS2 and MoSe2, in single-layer (1L) and bilayer (2L) forms. This new version incorporates two crucial improvements over previous implementations. First, we utilize more direct measurements of the optical absorption of the suspended samples under study and find values ∼40% lower than previously assumed. Second, by comparing the response of fully supported and suspended samples using different laser spot sizes, we are able to independently measure the interfacial thermal conductance to the substrate and the lateral thermal conductivity of the supported and suspended materials. The approach is validated by examining the response of a suspended film illuminated in different radial positions. For 1L MoS2 and MoSe2, the room-temperature thermal conductivities are 84 ± 17 and 59 ± 18 W/(m·K), respectively. For 2L MoS2 and MoSe2, we obtain values of 77 ± 25 W and 42 ± 13 W/(m·K). Crucially, the interfacial thermal conductance is found to be of order 0.1-1 MW/m(2) K, substantially smaller than previously assumed, a finding that has important implications for design and modeling of electronic devices.
Overview
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Integrity signals
Registry
Cites
Statistics
Verification
Claims the paper makes
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Self-check
Percentages, sums and reported differences re-computed from the paper’s own numbers.
The self-check needs the paper’s full text.
Citations
Cites
Electric Field Effect in Atomically Thin Carbon Films
Novoselov, K. S., Geim, A. K., Morozov, S. V., Jiang, D., Zhang, Y., Dubonos, S. V., Grigorieva, I. V., & Firsov, A. A. (2004) · Science · doi:10.1126/science.1102896 · Cited by 66,834
Two-dimensional gas of massless Dirac fermions in graphene
Novoselov, K. S., Geim, A. K., Morozov, S. V., Jiang, D., Katsnelson, M. I., Grigorieva, I. V., Dubonos, S. V., & Firsov, A. A. (2005) · Nature · doi:10.1038/nature04233 · Cited by 21,611
Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
Wang, Q. H., Kalantar-Zadeh, K., Kis, A., Coleman, J. N., & Strano, M. S. (2012) · Nature Nanotechnology · doi:10.1038/nnano.2012.193 · Cited by 16,374
Atomically Thin MoS 2 : A New Direct-Gap Semiconductor
Mak, K. F., Lee, C., Hone, J., Shan, J., & Heinz, T. F. (2010) · Physical Review Letters · doi:10.1103/physrevlett.105.136805 · Cited by 15,586
Self-citationRadisavljevic, B., Radenovic, A., Brivio, J., Giacometti, V., & Kis, A. (2011) · Nature Nanotechnology · doi:10.1038/nnano.2010.279 · Cited by 14,939
Two-dimensional atomic crystals
Novoselov, K. S., Jiang, D., Schedin, F., Booth, T. J., Khotkevich, V. V., Morozov, S. V., & Geim, A. K. (2005) · Proceedings of the National Academy of Sciences · doi:10.1073/pnas.0502848102 · Cited by 11,788
Van der Waals heterostructures
Geim, A. K., & Grigorieva, I. V. (2013) · Nature · doi:10.1038/nature12385 · Cited by 10,875
Emerging Photoluminescence in Monolayer MoS2
Splendiani, A., Sun, L., Zhang, Y., Li, T., Kim, J., Chim, C.-Y., Galli, G., & Wang, F. (2010) · Nano Letters · doi:10.1021/nl903868w · Cited by 9,501
Two-Dimensional Nanosheets Produced by Liquid Exfoliation of Layered Materials
Coleman, J. N., Lotya, M., O’Neill, A., Bergin, S. D., King, P. J., Khan, U., Young, K., Gaucher, A., De, S., Smith, R. J., et al. (2011) · Science · doi:10.1126/science.1194975 · Cited by 7,242
Boron nitride substrates for high-quality graphene electronics
Dean, C. R., Young, A. F., Meric, I., Lee, C., Wang, L., Sorgenfrei, S., Watanabe, K., Taniguchi, T., Kim, P., Shepard, K. L., et al. (2010) · Nature Nanotechnology · doi:10.1038/nnano.2010.172 · Cited by 7,124
Self-citationThermal properties of graphene and nanostructured carbon materials
Balandin, A. A. (2011) · Nature Materials · doi:10.1038/nmat3064 · Cited by 6,244
Coupled Spin and Valley Physics in Monolayers ofMoS2and Other Group-VI Dichalcogenides
Xiao, D., Liu, G.-B., Feng, W., Xu, X., & Yao, W. (2012) · Physical Review Letters · doi:10.1103/physrevlett.108.196802 · Cited by 5,152
Anomalous Lattice Vibrations of Single- and Few-Layer MoS2
Lee, C., Yan, H., Brus, L. E., Heinz, T. F., Hone, J., & Ryu, S. (2010) · ACS Nano · doi:10.1021/nn1003937 · Cited by 4,859
Self-citationOptical properties of metallic films for vertical-cavity optoelectronic devices
Rakić, A. D., Djurišić, A. B., Elazar, J. M., & Majewski, M. L. (1998) · Applied Optics · doi:10.1364/ao.37.005271 · Cited by 4,345
Interspecimen Comparison of the Refractive Index of Fused Silica*,†
Malitson, I. H. (1965) · Journal of the Optical Society of America · doi:10.1364/josa.55.001205 · Cited by 4,216
Photoluminescence from Chemically Exfoliated MoS 2
Eda, G., Yamaguchi, H., Voiry, D., Fujita, T., Chen, M., & Chhowalla, M. (2011) · Nano Letters · doi:10.1021/nl201874w · Cited by 3,896
Valley polarization in MoS2 monolayers by optical pumping
Zeng, H., Dai, J., Yao, W., Xiao, D., & Cui, X. (2012) · Nature Nanotechnology · doi:10.1038/nnano.2012.95 · Cited by 3,693
Self-citationOne-Dimensional Electrical Contact to a Two-Dimensional Material
Wang, L., Meric, I., Huang, P. Y., Gao, Q., Gao, Y., Tran, H., Taniguchi, T., Watanabe, K., Campos, L. M., Muller, D. A., et al. (2013) · Science · doi:10.1126/science.1244358 · Cited by 3,042
Self-citationEmerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides
Jariwala, D., Sangwan, V. K., Lauhon, L. J., Marks, T. J., & Hersam, M. C. (2014) · ACS Nano · doi:10.1021/nn500064s · Cited by 2,753
Strong Light-Matter Interactions in Heterostructures of Atomically Thin Films
Britnell, L., Ribeiro, R. M., Eckmann, A., Jalil, R., Belle, B. D., Mishchenko, A., Kim, Y.-J., Gorbachev, R. V., Georgiou, T., Morozov, S. V., et al. (2013) · Science · doi:10.1126/science.1235547 · Cited by 2,581
High Performance Multilayer MoS2 Transistors with Scandium Contacts
Das, S., Chen, H.-Y., Penumatcha, A. V., & Appenzeller, J. (2013) · Nano Letters · doi:10.1021/nl303583v · Cited by 2,428
Piezoelectricity of single-atomic-layer MoS2 for energy conversion and piezotronics
Wu, W., Wang, L., Li, Y., Zhang, F., Lin, L., Niu, S., Chenet, D., Zhang, X., Hao, Y., Heinz, T. F., et al. (2014) · Nature · doi:10.1038/nature13792 · Cited by 2,287
Self-citationHigh-Performance Single Layered WSe2 p-FETs with Chemically Doped Contacts
Fang, H., Chuang, S., Chang, T. C., Takei, K., Takahashi, T., & Javey, A. (2012) · Nano Letters · doi:10.1021/nl301702r · Cited by 1,862
Mobility engineering and a metal–insulator transition in monolayer MoS2
Radisavljevic, B., & Kis, A. (2013) · Nature Materials · doi:10.1038/nmat3687 · Cited by 1,817
Integrated Circuits Based on Bilayer MoS2 Transistors
Wang, H., Yu, L., Lee, Y.-H., Shi, Y., Hsu, A., Chin, M. L., Li, L.-J., Dubey, M., Kong, J., & Palacios, T. (2012) · Nano Letters · doi:10.1021/nl302015v · Cited by 1,738
Micrometer-Scale Ballistic Transport in Encapsulated Graphene at Room Temperature
Mayorov, A. S., Gorbachev, R. V., Morozov, S. V., Britnell, L., Jalil, R., Ponomarenko, L. A., Blake, P., Novoselov, K. S., Watanabe, K., Taniguchi, T., et al. (2011) · Nano Letters · doi:10.1021/nl200758b · Cited by 1,672
High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals
Kim, S., Konar, A., Hwang, W.-S., Lee, J. H., Lee, J., Yang, J., Jung, C., Kim, H., Yoo, J.-B., Choi, J.-Y., et al. (2012) · Nature Communications · doi:10.1038/ncomms2018 · Cited by 1,636
How Good Can Monolayer MoS2 Transistors Be?
Yoon, Y., Ganapathi, K., & Salahuddin, S. (2011) · Nano Letters · doi:10.1021/nl2018178 · Cited by 1,528
Photoluminescence emission and Raman response of monolayer MoS_2, MoSe_2, and WSe_2
Tonndorf, P., Schmidt, R., Böttger, P., Zhang, X., Börner, J., Liebig, A., Albrecht, M., Kloc, C., Gordan, O., Zahn, D. R. T., et al. (2013) · Optics Express · doi:10.1364/oe.21.004908 · Cited by 1,521
Self-citationTongay, S., Zhou, J., Ataca, C., Lo, K., Matthews, T. S., Li, J., Grossman, J. C., & Wu, J. (2012) · Nano Letters · doi:10.1021/nl302584w · Cited by 1,428
Dimensional crossover of thermal transport in few-layer graphene
Ghosh, S., Bao, W., Nika, D. L., Subrina, S., Pokatilov, E. P., Lau, C. N., & Balandin, A. A. (2010) · Nature Materials · doi:10.1038/nmat2753 · Cited by 1,388
Li, Y., Chernikov, A., Zhang, X., Rigosi, A., Hill, H. M., van der Zande, A. M., Chenet, D. A., Shih, E.-M., Hone, J., & Heinz, T. F. (2014) · Physical Review B · doi:10.1103/physrevb.90.205422 · Cited by 1,332
Self-citationThermal Transport in Suspended and Supported Monolayer Graphene Grown by Chemical Vapor Deposition
Cai, W., Moore, A. L., Zhu, Y., Li, X., Chen, S., Shi, L., & Ruoff, R. S. (2010) · Nano Letters · doi:10.1021/nl9041966 · Cited by 1,262
Temperature Dependence of the Raman Spectra of Graphene and Graphene Multilayers
Calizo, I., Balandin, A. A., Bao, W., Miao, F., & Lau, C. N. (2007) · Nano Letters · doi:10.1021/nl071033g · Cited by 1,226
Lee, G.-H., Yu, Y.-J., Cui, X., Petrone, N., Lee, C.-H., Choi, M. S., Lee, D.-Y., Lee, C., Yoo, W. J., Watanabe, K., et al. (2013) · ACS Nano · doi:10.1021/nn402954e · Cited by 1,095
Self-citationElectroluminescence in Single Layer MoS2
Sundaram, R. S., Engel, M., Lombardo, A., Krupke, R., Ferrari, A. C., Avouris, P., & Steiner, M. (2013) · Nano Letters · doi:10.1021/nl400516a · Cited by 1,007
Yan, R., Simpson, J. R., Bertolazzi, S., Brivio, J., Watson, M., Wu, X., Kis, A., Luo, T., Hight Walker, A. R., & Xing, H. G. (2014) · ACS Nano · doi:10.1021/nn405826k · Cited by 876
Ambipolar MoS2 Thin Flake Transistors
Zhang, Y., Ye, J., Matsuhashi, Y., & Iwasa, Y. (2012) · Nano Letters · doi:10.1021/nl2021575 · Cited by 818
Sup Choi, M., Lee, G.-H., Yu, Y.-J., Lee, D.-Y., Hwan Lee, S., Kim, P., Hone, J., & Jong Yoo, W. (2013) · Nature Communications · doi:10.1038/ncomms2652 · Cited by 767
Self-citationTemperature-Dependent Raman Studies and Thermal Conductivity of Few-Layer MoS2
Sahoo, S., Gaur, A. P. S., Ahmadi, M., Guinel, M. J.-F., & Katiyar, R. S. (2013) · The Journal of Physical Chemistry C · doi:10.1021/jp402509w · Cited by 710
Intrinsic Electronic Transport Properties of High-Quality Monolayer and Bilayer MoS2
Baugher, B. W. H., Churchill, H. O. H., Yang, Y., & Jarillo-Herrero, P. (2013) · Nano Letters · doi:10.1021/nl401916s · Cited by 628
Thermal conductivity and phonon linewidths of monolayer MoS2 from first principles
Li, W., Carrete, J., & Mingo, N. (2013) · Applied Physics Letters · doi:10.1063/1.4850995 · Cited by 317
Highly Flexible and Transparent Multilayer MoS2 Transistors with Graphene Electrodes
Yoon, J., Park, W., Bae, G., Kim, Y., Jang, H. S., Hyun, Y., Lim, S. K., Kahng, Y. H., Hong, W., Lee, B. H., et al. (2013) · Small · doi:10.1002/smll.201300134 · Cited by 275
Graphene based heterostructures
Dean, C., Young, A. F., Wang, L., Meric, I., Lee, G.-H., Watanabe, K., Taniguchi, T., Shepard, K., Kim, P., & Hone, J. (2012) · Solid State Communications · doi:10.1016/j.ssc.2012.04.021 · Cited by 246
Self-citationTemperature-Dependent Thermal Properties of Supported MoS2 Monolayers
Taube, A., Judek, J., Łapińska, A., & Zdrojek, M. (2015) · ACS Applied Materials & Interfaces · doi:10.1021/acsami.5b00690 · Cited by 218
Phonon thermal conductivity of monolayer MoS2 sheet and nanoribbons
Liu, X., Zhang, G., Pei, Q.-X., & Zhang, Y.-W. (2013) · Applied Physics Letters · doi:10.1063/1.4823509 · Cited by 195
Cross-plane thermal properties of transition metal dichalcogenides
Muratore, C., Varshney, V., Gengler, J. J., Hu, J., Bultman, J. E., Smith, T. M., Shamberger, P. J., Qiu, B., Ruan, X., Roy, A. K., et al. (2013) · Applied Physics Letters · doi:10.1063/1.4793203 · Cited by 95
Thermal and Electronic Properties of Exfoliated Metal Chalcogenides
Kim, J., Choi, S., Seo, W., & Cho, W. (2010) · Bulletin of the Korean Chemical Society · doi:10.5012/bkcs.2010.31.11.3225 · Cited by 86
Thermal anisotropy in nano-crystalline MoS 2 thin films
Muratore, C., Varshney, V., Gengler, J. J., Hu, J., Bultman, J. E., Roy, A. K., Farmer, B. L., & Voevodin, A. A. (2013) · Physical Chemistry Chemical Physics · doi:10.1039/c3cp53746c · Cited by 75
Orientation Dependent Thermal Conductance in Single-Layer MoS2
Jiang, J.-W., Zhuang, X., & Rabczuk, T. (2013) · Scientific Reports · doi:10.1038/srep02209 · Cited by 65
Cited by
Qiu, L., Zhu, N., Feng, Y., Michaelides, E. E., Żyła, G., Jing, D., Zhang, X., Norris, P. M., Markides, C. N., & Mahian, O. (2020) · Physics Reports · doi:10.1016/j.physrep.2019.12.001 · Cited by 523
Self-citationZhang, Y., Heo, Y.-J., Son, Y.-R., In, I., An, K.-H., Kim, B.-J., & Park, S.-J. (2019) · Carbon · doi:10.1016/j.carbon.2018.10.077 · Cited by 341
Jiang, P., Qian, X., Gu, X., & Yang, R. (2017) · Advanced Materials · doi:10.1002/adma.201701068 · Cited by 239
Metadata
- Authors
- Zhang, X., Sun, D., Li, Y., Lee, G.-H., Cui, X., Chenet, D., You, Y., Heinz, T. F., & Hone, J. C.
- Venue
- ACS Applied Materials & Interfaces
- Publisher
- American Chemical Society (ACS)
- Published
- 2015-11-10
- Volume
- 7
- Issue
- 46
- Pages
- 25923-25929
- ISSN
- 1944-8244 (ISSN-L)
- 1944-8252
- OpenAlex
- W2151016584
- Cited by
- 369
- References
- 50
- FWCI
- 10.13
- Type
- journal article
- Language
- en
- Open access
- green
About these checks
Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.
Statistics and arithmetic are recomputed, not judged.
Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.
What counts as a claim ›How we measure confidence ›How we check this ›
Are you an author, or do you see a problem with this page? Request a review
Data sources
Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.
