The DOI matches its Crossref record, with a small difference in title or year; 45 of the 45 references it cites were found in a registry or an index.
Multilevel Resistance Switching Memory in La2/3Ba1/3MnO3/0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 (011) Heterostructure by Combined Straintronics-Spintronics
Abstract
We demonstrate a memory device with multifield switchable multilevel states at room temperature based on the integration of straintronics and spintronics in a La2/3Ba1/3MnO3/0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 (PMN-PT) (011) heterostructure. By precisely controlling the electric field applied on the PMN-PT substrate, multiple nonvolatile resistance states can be generated in La2/3Ba1/3MnO3 films, which can be ascribed to the strain-modulated metal-insulator transition and phase separation of Manganite. Furthermore, because of the strong coupling between spin and charge degrees of freedom, the resistance of the La2/3Ba1/3MnO3 film can be readily modulated by magnetic field over a broad temperature range. Therefore, by combining electroresistance and magnetoresistance effects, multilevel resistance states with excellent retention and endurance properties can be achieved at room temperature with the coactions of electric and magnetic fields. The incorporation of ferroelastic strain and magnetic and resistive properties in memory cells suggests a promising approach for multistate, high-density, and low-power consumption electronic memory devices.
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“Advanced algorithms have the capability of crossreference biometric information collected with wearable devices based on users' behavior (activity time, location) to reveal the patient's identity.126”
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Metadata
- Authors
- Zhou, W., Xiong, Y., Zhang, Z., Wang, D., Tan, W., Cao, Q., Qian, Z., & Du, Y.
- Affiliations
- Nanjing University of Science and Technology (CN)
- Collaborative Innovation Center of Advanced Microstructures (CN)
- Nanjing Tech University (CN)
- Hangzhou Dianzi University (CN)
- Corresponding author
- Wang, Dunhui
- Venue
- ACS Applied Materials & Interfaces
- Publisher
- American Chemical Society (ACS)
- Published
- 2016-02-16
- Volume
- 8
- Issue
- 8
- Pages
- 5424-5431
- ISSN
- 1944-8244 (ISSN-L)
- 1944-8252
- OpenAlex
- W2280769329
- Cited by
- 60
- References
- 45
- Citations by year
- 2026: 3 · 2025: 2 · 2024: 3 · 2023: 4 · 2022: 4 · 2021: 5 · 2020: 8 · 2019: 11 · 2018: 12 · 2017: 7 · 2016: 1
- FWCI
- 3.25
- Type
- journal article
- Language
- en
- Open access
- closed
- Locations
- ACS Applied Materials & Interfaces (publishedVersion)
- PubMed (publishedVersion)
- Funders
- Ministry of Science and Technology of the People's Republic of China (2012CB932304, 2014AA032904)
- Topics
- Physical Sciences › Materials Science › Electronic, Optical and Magnetic Materials › Multiferroics and related materials
- Physical Sciences › Materials Science › Electronic, Optical and Magnetic Materials › Magnetic and transport properties of perovskites and related materials
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Advanced Memory and Neural Computing
- Keywords
- resistive random access memory, straintronics, spintronics, PMN-PT, magnetoresistance, electroresistance, non-volatile memory, ferroelectric-ferromagnetic heterostructures, spin-charge coupling
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