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Field-Effect Transistors Based on Single Semiconducting Oxide Nanobelts

Arnold, Michael S., Avouris, Phaedon, Pan, Zheng Wei, Wang, Zhong L.·2003·The Journal of Physical Chemistry B

Abstract

We have fabricated field-effect transistors (FETs) based on single SnO 2 and ZnO nanobelts of thicknesses between 10 and 30 nm. Switching ratios as large as 6 orders of magnitude and conductivities as high as 15 (Ω cm) -1 are observed. Annealing SnO 2 nanobelt FETs in an oxygen-deficient atmosphere produces a negative shift in gate threshold voltage, indicating doping by the generation of surface oxygen vacancies. This treatment provides an effective way of tuning the electrical performance of the nanobelt devices. The ability of SnO 2 FETs to act as gas sensors is also demonstrated. SnO 2 FETs with lengths of about 500 nm or less show an anomalous behavior where the conductance cannot be modulated by the gate. ZnO nanobelt FETs are sensitive to ultraviolet light. Both photogeneration of electron−hole pairs and doping by UV induced surface desorption contribute to the conductivity.

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Authors
Arnold, M. S., Avouris, P., Pan, Z. W., & Wang, Z. L.
Venue
The Journal of Physical Chemistry B
Published
2002-12-28
Volume
107
Issue
3
Pages
659-663
ISSN
  • 1520-5207 (ISSN-L)
  • 1520-6106
OpenAlex
W2031234124
Cited by
1,090
References
0
FWCI
35.65
Type
journal article
Language
en
Open access
closed

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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).

Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.