The DOI matches its Crossref record; 30 of the 30 references it cites were found in a registry or an index.
Surface-Energy Engineering of Graphene
Open accessAbstract
Contact angle goniometry is conducted for epitaxial graphene on SiC. Although only a single layer of epitaxial graphene exists on SiC, the contact angle drastically changes from 69 degrees on SiC substrates to 92 degrees on graphene. It is found that there is no thickness dependence of the contact angle from the measurements of single-, bi-, and multilayer graphene and highly ordered pyrolytic graphite (HOPG). After graphene is treated with oxygen plasma, the level of damage is investigated by Raman spectroscopy and the correlation between the level of disorder and wettability is reported. By using a low-power oxygen plasma treatment, the wettability of graphene is improved without additional damage, which can solve the adhesion issues involved in the fabrication of graphene devices.
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Citations
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Cited by
Study on the Surface Energy of Graphene by Contact Angle Measurements
Kozbial, A., Li, Z., Conaway, C., McGinley, R., Dhingra, S., Vahdat, V., Zhou, F., D’Urso, B., Liu, H., & Li, L. (2014) · Langmuir · doi:10.1021/la5018328 · Cited by 561
Metadata
- Authors
- Shin, Y. J., Wang, Y., Huang, H., Kalon, G., Wee, A. T. S., Shen, Z., Bhatia, C. S., & Yang, H.
- Venue
- Langmuir
- Publisher
- American Chemical Society (ACS)
- Published
- 2010-02-17
- Volume
- 26
- Issue
- 6
- Pages
- 3798-3802
- ISSN
- 0743-7463 (ISSN-L)
- 1520-5827
- OpenAlex
- W2053957995
- Cited by
- 462
- References
- 30
- FWCI
- 13.28
- Type
- journal article
- Language
- en
- Open access
- green
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