The DOI matches its Crossref record; 24 of the 24 references it cites were found in a registry or an index.
Synthesis and Photoresponse of Large GaSe Atomic Layers
Abstract
We report the direct growth of large, atomically thin GaSe single crystals on insulating substrates by vapor phase mass transport. A correlation is identified between the number of layers and a Raman shift and intensity change. We found obvious contrast of the resistance of the material in the dark and when illuminated with visible light. In the photoconductivity measurement we observed a low dark current. The on-off ratio measured with a 405 nm at 0.5 mW/mm(2) light source is in the order of 10(3); the photoresponsivity is 17 mA/W, and the quantum efficiency is 5.2%, suggesting possibility for photodetector and sensor applications. The photocurrent spectrum of few-layer GaSe shows an intense blue shift of the excitation edge and expanded band gap compared with bulk material.
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Self-citationControlled Synthesis of High-Quality Monolayered α-In2Se3 via Physical Vapor Deposition
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Metadata
- Authors
- Lei, S., Ge, L., Liu, Z., Najmaei, S., Shi, G., You, G., Lou, J., Vajtai, R., & Ajayan, P. M.
- Venue
- Nano Letters
- Publisher
- American Chemical Society (ACS)
- Published
- 2013-06-03
- Volume
- 13
- Issue
- 6
- Pages
- 2777-2781
- ISSN
- 1530-6984 (ISSN-L)
- 1530-6992
- OpenAlex
- W2084762241
- Cited by
- 454
- References
- 24
- FWCI
- 15.69
- Type
- journal article
- Language
- en
- Open access
- closed
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