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Synthesis and Photoresponse of Large GaSe Atomic Layers
Abstract
We report the direct growth of large, atomically thin GaSe single crystals on insulating substrates by vapor phase mass transport. A correlation is identified between the number of layers and a Raman shift and intensity change. We found obvious contrast of the resistance of the material in the dark and when illuminated with visible light. In the photoconductivity measurement we observed a low dark current. The on-off ratio measured with a 405 nm at 0.5 mW/mm(2) light source is in the order of 10(3); the photoresponsivity is 17 mA/W, and the quantum efficiency is 5.2%, suggesting possibility for photodetector and sensor applications. The photocurrent spectrum of few-layer GaSe shows an intense blue shift of the excitation edge and expanded band gap compared with bulk material.
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Electric Field Effect in Atomically Thin Carbon Films
Novoselov, K. S., Geim, A. K., Morozov, S. V., Jiang, D., Zhang, Y., Dubonos, S. V., Grigorieva, I. V., & Firsov, A. A. (2004) · Science · doi:10.1126/science.1102896 · Cited by 66,834
Large-scale pattern growth of graphene films for stretchable transparent electrodes
Kim, K. S., Zhao, Y., Jang, H., Lee, S. Y., Kim, J. M., Kim, K. S., Ahn, J.-H., Kim, P., Choi, J.-Y., & Hong, B. H. (2009) · Nature · doi:10.1038/nature07719 · Cited by 10,452
Two-Dimensional Nanosheets Produced by Liquid Exfoliation of Layered Materials
Coleman, J. N., Lotya, M., O’Neill, A., Bergin, S. D., King, P. J., Khan, U., Young, K., Gaucher, A., De, S., Smith, R. J., et al. (2011) · Science · doi:10.1126/science.1194975 · Cited by 7,242
Schwierz, F. (2010) · Nature Nanotechnology · doi:10.1038/nnano.2010.89 · Cited by 5,267
Chemically Derived, Ultrasmooth Graphene Nanoribbon Semiconductors
Li, X., Wang, X., Zhang, L., Lee, S., & Dai, H. (2008) · Science · doi:10.1126/science.1150878 · Cited by 4,790
Single-Layer MoS2Phototransistors
Yin, Z., Li, H., Li, H., Jiang, L., Shi, Y., Sun, Y., Lu, G., Zhang, Q., Chen, X., & Zhang, H. (2012) · ACS Nano · doi:10.1021/nn2024557 · Cited by 3,493
Intrinsic and extrinsic performance limits of graphene devices on SiO2
Chen, J.-H., Jang, C., Xiao, S., Ishigami, M., & Fuhrer, M. S. (2008) · Nature Nanotechnology · doi:10.1038/nnano.2008.58 · Cited by 3,173
Large Scale Growth and Characterization of Atomic Hexagonal Boron Nitride Layers
Song, L., Ci, L., Lu, H., Sorokin, P. B., Jin, C., Ni, J., Kvashnin, A. G., Kvashnin, D. G., Lou, J., Yakobson, B. I., et al. (2010) · Nano Letters · doi:10.1021/nl1022139 · Cited by 2,689
Self-citationSubstrate-induced bandgap opening in epitaxial graphene
Zhou, S. Y., Gweon, G.-H., Fedorov, A. V., First, P. N., de Heer, W. A., Lee, D.-H., Guinea, F., Castro Neto, A. H., & Lanzara, A. (2007) · Nature Materials · doi:10.1038/nmat2003 · Cited by 2,381
Frictional Characteristics of Atomically Thin Sheets
Lee, C., Li, Q., Kalb, W., Liu, X.-Z., Berger, H., Carpick, R. W., & Hone, J. (2010) · Science · doi:10.1126/science.1184167 · Cited by 1,811
Synthesis of Few-Layer GaSe Nanosheets for High Performance Photodetectors
Hu, P., Wen, Z., Wang, L., Tan, P., & Xiao, K. (2012) · ACS Nano · doi:10.1021/nn300889c · Cited by 913
Nitrogen-Doped Graphene: Efficient Growth, Structure, and Electronic Properties
Usachov, D., Vilkov, O., Grüneis, A., Haberer, D., Fedorov, A., Adamchuk, V. K., Preobrajenski, A. B., Dudin, P., Barinov, A., Oehzelt, M., et al. (2011) · Nano Letters · doi:10.1021/nl2031037 · Cited by 764
GaS and GaSe Ultrathin Layer Transistors
Late, D. J., Liu, B., Luo, J., Yan, A., Matte, H. S. S. R., Grayson, M., Rao, C. N. R., & Dravid, V. P. (2012) · Advanced Materials · doi:10.1002/adma.201201361 · Cited by 673
Alem, N., Erni, R., Kisielowski, C., Rossell, M. D., Gannett, W., & Zettl, A. (2009) · Physical Review B · doi:10.1103/physrevb.80.155425 · Cited by 543
Raman Spectroscopy of Few-Quintuple Layer Topological Insulator Bi2Se3 Nanoplatelets
Zhang, J., Peng, Z., Soni, A., Zhao, Y., Xiong, Y., Peng, B., Wang, J., Dresselhaus, M. S., & Xiong, Q. (2011) · Nano Letters · doi:10.1021/nl200773n · Cited by 511
Rapid Characterization of Ultrathin Layers of Chalcogenides on SiO2/Si Substrates
Late, D. J., Liu, B., Matte, H. S. S. R., Rao, C. N. R., & Dravid, V. P. (2012) · Advanced Functional Materials · doi:10.1002/adfm.201102913 · Cited by 495
Teweldebrhan, D., Goyal, V., & Balandin, A. A. (2010) · Nano Letters · doi:10.1021/nl903590b · Cited by 455
Efficient, tunable, and coherent 018–527-THz source based on GaSe crystal
Shi, W., Ding, Y. J., Fernelius, N., & Vodopyanov, K. (2002) · Optics Letters · doi:10.1364/ol.27.001454 · Cited by 402
Friction Anisotropy–Driven Domain Imaging on Exfoliated Monolayer Graphene
Choi, J. S., Kim, J.-S., Byun, I.-S., Lee, D. H., Lee, M. J., Park, B. H., Lee, C., Yoon, D., Cheong, H., Lee, K. H., et al. (2011) · Science · doi:10.1126/science.1207110 · Cited by 328
Band gap opening of graphene by doping small boron nitride domains
Fan, X., Shen, Z., Liu, A. Q., & Kuo, J.-L. (2012) · Nanoscale · doi:10.1039/c2nr11728b · Cited by 262
Kübler, C., Huber, R., Tübel, S., & Leitenstorfer, A. (2004) · Applied Physics Letters · doi:10.1063/1.1808232 · Cited by 240
A wide-bandgap metal–semiconductor–metal nanostructure made entirely from graphene
Hicks, J., Tejeda, A., Taleb-Ibrahimi, A., Nevius, M. S., Wang, F., Shepperd, K., Palmer, J., Bertran, F., Le Fèvre, P., Kunc, J., et al. (2013) · Nature Physics · doi:10.1038/nphys2487 · Cited by 197
Ultrathin Topological Insulator Bi2Se3 Nanoribbons Exfoliated by Atomic Force Microscopy
Hong, S. S., Kundhikanjana, W., Cha, J. J., Lai, K., Kong, D., Meister, S., Kelly, M. A., Shen, Z.-X., & Cui, Y. (2010) · Nano Letters · doi:10.1021/nl101884h · Cited by 177
Atomically-thin crystalline films and ribbons of bismuth telluride
Teweldebrhan, D., Goyal, V., Rahman, M. S., & Balandin, A. A. (2010) · Applied Physics Letters · doi:10.1063/1.3280078 · Cited by 133
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Metadata
- Authors
- Lei, S., Ge, L., Liu, Z., Najmaei, S., Shi, G., You, G., Lou, J., Vajtai, R., & Ajayan, P. M.
- Venue
- Nano Letters
- Publisher
- American Chemical Society (ACS)
- Published
- 2013-06-03
- Volume
- 13
- Issue
- 6
- Pages
- 2777-2781
- ISSN
- 1530-6984 (ISSN-L)
- 1530-6992
- OpenAlex
- W2084762241
- Cited by
- 454
- References
- 24
- FWCI
- 15.69
- Type
- journal article
- Language
- en
- Open access
- closed
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