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Hysteresis in Single-Layer MoS2 Field Effect Transistors
Abstract
Field effect transistors using ultrathin molybdenum disulfide (MoS(2)) have recently been experimentally demonstrated, which show promising potential for advanced electronics. However, large variations like hysteresis, presumably due to extrinsic/environmental effects, are often observed in MoS(2) devices measured under ambient environment. Here, we report the origin of their hysteretic and transient behaviors and suggest that hysteresis of MoS(2) field effect transistors is largely due to absorption of moisture on the surface and intensified by high photosensitivity of MoS(2). Uniform encapsulation of MoS(2) transistor structures with silicon nitride grown by plasma-enhanced chemical vapor deposition is effective in minimizing the hysteresis, while the device mobility is improved by over 1 order of magnitude.
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Citations
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Metadata
- Authors
- Late, D. J., Liu, B., Matte, H. S. S. R., Dravid, V. P., & Rao, C. N. R.
- Venue
- ACS Nano
- Publisher
- American Chemical Society (ACS)
- Published
- 2012-05-23
- Volume
- 6
- Issue
- 6
- Pages
- 5635-5641
- ISSN
- 1936-0851 (ISSN-L)
- 1936-086X
- OpenAlex
- W2328412715
- Cited by
- 1,123
- References
- 28
- FWCI
- 34.32
- Type
- journal article
- Language
- en
- Open access
- closed
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