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Emergent quantum confinement at topological insulator surfaces
Open accessAbstract
The surface electronic structure of bismuth-chalchogenide topological insulators interfaced to air or other materials has complex features not predicted by theory. Bahramy et al. propose a model explaining the origin of these electronic states, and uncover their rich spin texture by circular dichroism experiments. Bismuth-chalchogenides are model examples of three-dimensional topological insulators. Their ideal bulk-truncated surface hosts a single spin-helical surface state, which is the simplest possible surface electronic structure allowed by their non-trivial Z2 topology. However, real surfaces of such compounds, even if kept in ultra-high vacuum, rapidly develop a much more complex electronic structure whose origin and properties have proved controversial. Here we demonstrate that a conceptually simple model, implementing a semiconductor-like band bending in a parameter-free tight-binding supercell calculation, can quantitatively explain the entire measured hierarchy of electronic states. In combination with circular dichroism in angle-resolved photoemission experiments, we further uncover a rich three-dimensional spin texture of this surface electronic system, resulting from the non-trivial topology of the bulk band structure. Moreover, our study sheds new light on the surface-bulk connectivity in topological insulators, and reveals how this is modified by quantum confinement.
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Self-citation
Metadata
- Authors
- Bahramy, M. S., King, P. D. C., de la Torre, A., Chang, J., Shi, M., Patthey, L., Balakrishnan, G., Hofmann, P., Arita, R., Nagaosa, N., & Baumberger, F.
- Venue
- Nature Communications
- Published
- 2012-10-23
- Volume
- 3
- Issue
- 1
- Pages
- 1159-1159
- ISSN
- 2041-1723 (ISSN-L)
- OpenAlex
- W2127632055
- Cited by
- 286
- References
- 49
- FWCI
- 12.13
- Type
- journal article
- Language
- en
- Open access
- bronze
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