The DOI matches its Crossref record; 2 of the 2 references it cites were found in a registry or an index.
Memory leads the way to better computing
Overview
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Integrity signals
Registry
Cites
Statistics
Verification
Claims the paper makes
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Self-check
Percentages, sums and reported differences re-computed from the paper’s own numbers.
The self-check needs the paper’s full text.
Citations
Cites
Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges
Waser, R., Dittmann, R., Staikov, G., & Szot, K. (2009) · Advanced Materials · doi:10.1002/adma.200900375 · Cited by 5,080
Nanoionics-based resistive switching memories
Waser, R., & Aono, M. (2007) · Nature Materials · doi:10.1038/nmat2023 · Cited by 4,923
Research works printed but not linked: 29
- Shulaker, M. et al. Monolithic 3D integration: a path from concept to reality http://www.date-conference.com/conference/session/9.8 (2015). · doi:10.7873/date.2015.1111
- Itoh, K. VLSI Memory Chip Design (Springer, 2001). · doi:10.1007/978-3-662-04478-0
- Borkar, S. & Chien, A. W. Commun. Assoc. Comput. Machin. 54, 67–77 (2011).
- http://www-03.ibm.com/press/us/en/pressrelease/20209.wss
- Brewer, J. & Gill, M. (eds) Nonvolatile Memory Technologies with Emphasis on Flash: A Comprehensive Guide to Understanding and Using Flash Memory Devices (Wiley/IEEE, 2011).
- Qureshi, M. K., Srinivasan, V. & Rivers, J. A. SIGARCH Comput. Archit. News 37, 24–33 (2009). · DOI · Paper page
- Parkin, S. S. P. Proc. Int. Electron Devices Meeting (IEDM) 903–906 (2004).
- Freitas, R. F. & Wilcke, W. W. IBM J. Res. Dev. 52, 439–447 (2008). · DOI · Paper page
- Burr, G. W. et al. IBM J. Res. Dev. 52, 449–464 (2008). · DOI · Paper page
- Kent, A. D. & Worledge, D. Nature Nanotech. 10, 187–191 (2015). · DOI · Paper page
- Khvalkovskiy, A. V. et al. J. Phys. D 46, 74001 (2013). · DOI · Paper page
- Morris, D., Bromberg, D., Zhu, G-J. & Pileggi, L. Design and Automation Conf. (DAC), 49th ACM/EDAC/IEEE 486–491 (2012).
- Datta, S., Salahuddin, S. & Behin-Aein, B. Appl. Phys. Lett. 101, 252411 (2012). · DOI
- Bhowmik, D., You, L. & Salahuddin, S. Nature Nanotech. 9, 59–63 (2014). · DOI · Paper page
- Wong, H.-S. P. et al. Proc. IEEE 98, 2201–2227 (2010). · DOI · Paper page
- Yamada, N. et al. Jpn. J. Appl. Phys. 26, 61–66 (1987). · doi:10.7567/jjaps.26s4.61
- Liang, J., Jeyasingh, R. G. D., Chen, H-Y. & Wong, H.-S. P. IEEE Trans. Electron Devices 59, 1155–1163 (2012). · DOI
- Takaura, N. et al. VLSI Technol Symp. T130–T131 (2013).
- Wong, H.-S. P. et al. Proc. IEEE 100, 1951–1970 (2012). · DOI · Paper page
- Kamiya, K. et al. Phys. Rev. B 87, 155201 (2013). · DOI
- Prince, B. Vertical 3D Memory Technologies (Wiley, 2014). · doi:10.1002/9781118760475
- Zahurak, J. et al. Int. Electron Devices Meeting (IEDM) 140–144, Paper 6.2 (2014).
- Lai, S. & Lowrey, T. Int. Electron Devices Meeting (IEDM) Paper 36.5 (2001).
- Bette, A. et al. Digest of Technical Papers: 2003 Symp. VLSI Circuits 217–220 (IEEE, 2003).
- Akerman, J. Science 308, 508–510 (2005). · DOI · Paper page
- Zhu, Q. et al. IEEE 23rd Int. Conf. Application-Specific Systems, Architectures Processors (ASAP) 125–132 (2012).
- Shulaker, M. et al. Nature 501, 256–530 (2013). · DOI · Paper page
- Wang, H. et al. Int. Electron Devices Meeting (IEDM) 88–91 (2012).
- Ebrahimi, M. S. et al. SOI-3D-Subthreshold Microelectronics Technology Unified Conf. (S3S) 1–2 http://dx.doi.org/10.1109/S3S.2014.7028198 (IEEE, 2014). · doi:10.1109/s3s.2014.7028198
Cited by
Memory devices and applications for in-memory computing
Sebastian, A., Le Gallo, M., Khaddam-Aljameh, R., & Eleftheriou, E. (2020) · Nature Nanotechnology · doi:10.1038/s41565-020-0655-z · Cited by 2,289
In-memory computing with resistive switching devices
Ielmini, D., & Wong, H.-S. P. (2018) · Nature Electronics · doi:10.1038/s41928-018-0092-2 · Cited by 2,298
“New and emerging non-volatile memory concepts have also been introduced into the traditional memory hierarchy to reduce the ‘distance’ between computing and the data 9 .”
BackgroundSelf-citationFully hardware-implemented memristor convolutional neural network
Yao, P., Wu, H., Gao, B., Tang, J., Zhang, Q., Zhang, W., Yang, J. J., & Qian, H. (2020) · Nature · doi:10.1038/s41586-020-1942-4 · Cited by 2,179
Face classification using electronic synapses
Yao, P., Wu, H., Gao, B., Eryilmaz, S. B., Huang, X., Zhang, W., Zhang, Q., Deng, N., Shi, L., Wong, H.-S. P., et al. (2017) · Nature Communications · doi:10.1038/ncomms15199 · Cited by 909
Self-citationNeuromorphic computing with multi-memristive synapses
Boybat, I., Le Gallo, M., Nandakumar, S. R., Moraitis, T., Parnell, T., Tuma, T., Rajendran, B., Leblebici, Y., Sebastian, A., & Eleftheriou, E. (2018) · Nature Communications · doi:10.1038/s41467-018-04933-y · Cited by 899
Metadata
- Authors
- Wong, H.-S. P., & Salahuddin, S.
- Venue
- Nature Nanotechnology
- Published
- 2015-03
- Volume
- 10
- Issue
- 3
- Pages
- 191-194
- ISSN
- 1748-3387 (ISSN-L)
- 1748-3395
- OpenAlex
- W2030671441
- Cited by
- 956
- References
- 2
- FWCI
- 30.63
- Type
- journal article
- Language
- en
- Update notices
- correction (2015-08-05)
- Open access
- closed
- Licence
- www.springer.com/tdm (tdm)
- www.springer.com/tdm (vor)
About these checks
Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.
Statistics and arithmetic are recomputed, not judged.
Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.
What counts as a claim ›How we measure confidence ›How we check this ›
Are you an author, or do you see a problem with this page? Request a review
How to cite
Cite CoChat for the checks on this page, and the paper for its own findings.
- This page
- CoChat. (2026). Citation check: Memory leads the way to better computing. https://app.cochat.ai/papers/10.1038/nnano.2015.29
- The paper
- Wong, H.-S. P., & Salahuddin, S. (2015). Memory leads the way to better computing. Nature Nanotechnology. https://doi.org/10.1038/nnano.2015.29
Data sources
Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.