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A two-qubit gate between phosphorus donor electrons in silicon

Open access
He, Y., Gorman, S. K., Keith, D., Kranz, L., Keizer, J. G., Simmons, M. Y.·2019·Nature

Abstract

Electron spin qubits formed by atoms in silicon have large (tens of millielectronvolts) orbital energies and weak spin–orbit coupling, giving rise to isolated electron spin ground states with coherence times of seconds1,2. High-fidelity (more than 99.9 per cent) coherent control of such qubits has been demonstrated3, promising an attractive platform for quantum computing. However, inter-qubit coupling—which is essential for realizing large-scale circuits in atom-based qubits—has not yet been achieved. Exchange interactions between electron spins4,5 promise fast (gigahertz) gate operations with two-qubit gates, as recently demonstrated in gate-defined silicon quantum dots6–10. However, creating a tunable exchange interaction between two electrons bound to phosphorus atom qubits has not been possible until now. This is because it is difficult to determine the atomic distance required to turn the exchange interaction on and off while aligning the atomic circuitry for high-fidelity, independent spin readout. Here we report a fast (about 800 picoseconds) SWAP\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\sqrt{{\bf{SWAP}}}$$\end{document} two-qubit exchange gate between phosphorus donor electron spin qubits in silicon using independent single-shot spin readout with a readout fidelity of about 94 per cent on a complete set of basis states. By engineering qubit placement on the atomic scale, we provide a route to the realization and efficient characterization of multi-qubit quantum circuits based on donor qubits in silicon. A fast, high-fidelity two-qubit exchange gate between phosphorus donor electron spin qubits in silicon is demonstrated by creating a tunable exchange interaction between two electrons bound to phosphorus atom qubits.

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Metadata

Authors
He, Y., Gorman, S. K., Keith, D., Kranz, L., Keizer, J. G., & Simmons, M. Y.
Venue
Nature
Published
2019-07-17
Volume
571
Issue
7765
Pages
371-375
ISSN
  • 0028-0836 (ISSN-L)
  • 1476-4687
OpenAlex
W2957237010
Cited by
322
References
28
FWCI
19.56
Type
journal article
Language
en
Open access
green

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CoChat. (2026). Citation check: A two-qubit gate between phosphorus donor electrons in silicon. https://app.cochat.ai/papers/10.1038/s41586-019-1381-2
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He, Y., Gorman, S. K., Keith, D., Kranz, L., Keizer, J. G., & Simmons, M. Y. (2019). A two-qubit gate between phosphorus donor electrons in silicon. Nature. https://doi.org/10.1038/s41586-019-1381-2

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