The DOI matches its Crossref record; 6 of the 6 references it cites were found in a registry or an index.
High-power InGaN/GaN double-heterostructure violet light emitting diodes
Abstract
InGaN/GaN double-heterostructure light-emitting diodes were fabricated. The output power was 90 μW and the external quantum efficiency was as high as 0.15% at a forward current of 20 mA at room temperature. The peak wavelengths of the electroluminescence (EL) varied between 411 and 420 nm with changes in the growth temperatures of an InGaN active layer between 820 and 800 °C. The full widths at half maximum of EL were between 22 and 25 nm.
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Citations
Cites
Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
Amano, H., Sawaki, N., Akasaki, I., & Toyoda, Y. (1986) · Applied Physics Letters · doi:10.1063/1.96549 · Cited by 2,217
P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)
Amano, H., Kito, M., Hiramatsu, K., & Akasaki, I. (1989) · Japanese Journal of Applied Physics · doi:10.1143/jjap.28.l2112 · Cited by 2,002
Hole Compensation Mechanism of P-Type GaN Films
Nakamura, S., Iwasa, N., Masayuki Senoh, M. S., & Takashi Mukai, T. M. (1992) · Japanese Journal of Applied Physics · doi:10.1143/jjap.31.1258 · Cited by 1,079
Self-citationHigh-Power GaN P-N Junction Blue-Light-Emitting Diodes
Nakamura, S., Takashi Mukai, T. M., & Masayuki Senoh, M. S. (1991) · Japanese Journal of Applied Physics · doi:10.1143/jjap.30.l1998 · Cited by 844
Self-citationNovel metalorganic chemical vapor deposition system for GaN growth
Nakamura, S., Harada, Y., & Seno, M. (1991) · Applied Physics Letters · doi:10.1063/1.105239 · Cited by 370
Self-citationHigh-Quality InGaN Films Grown on GaN Films
Nakamura, S. N. S., & Mukai, T. (1992) · Japanese Journal of Applied Physics · doi:10.1143/jjap.31.l1457 · Cited by 259
Self-citation
Cited by
Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologies
Morkoç, H., Strite, S., Gao, G. B., Lin, M. E., Sverdlov, B., & Burns, M. (1994) · Journal of Applied Physics · doi:10.1063/1.358463 · Cited by 2,733
Nakamura, S., & Fasol, G. (1997) · Springer eBooks · doi:10.1007/978-3-662-03462-0 · Cited by 1,730
Self-citationSynthesis of Gallium Nitride Nanorods Through a Carbon Nanotube-Confined Reaction
Han, W., Fan, S., Li, Q., & Hu, Y. (1997) · Science · doi:10.1126/science.277.5330.1287 · Cited by 1,290
Progress and prospects of group-III nitride semiconductors
Mohammad, S. N., & Morkoç, H. (1996) · Progress in Quantum Electronics · doi:10.1016/s0079-6727(96)00002-x · Cited by 502
Color-Pure Violet-Light-Emitting Diodes Based on Layered Lead Halide Perovskite Nanoplates
Liang, D., Peng, Y., Fu, Y., Shearer, M. J., Zhang, J., Zhai, J., Zhang, Y., Hamers, R. J., Andrew, T. L., & Jin, S. (2016) · ACS Nano · doi:10.1021/acsnano.6b02683 · Cited by 447
Metadata
- Authors
- Nakamura, S., Senoh, M., & Mukai, T.
- Venue
- Applied Physics Letters
- Publisher
- AIP Publishing
- Published
- 1993-05-10
- Volume
- 62
- Issue
- 19
- Pages
- 2390-2392
- ISSN
- 0003-6951 (ISSN-L)
- 1077-3118
- OpenAlex
- W2050080762
- Cited by
- 665
- References
- 6
- FWCI
- 13.53
- Type
- journal article
- Language
- en
- Open access
- closed
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Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.
