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Identification of the ferroelectric switching process and dopant-dependent switching properties in orthorhombic HfO2: A first principles insight
Abstract
The origin of the ferroelectric polarization switching in orthorhombic HfO2 has been investigated by first principles calculations. The phenomenon can be regarded as being the coordinated displacement of four O ions in the orthorhombic unit cell, which can lead to a saturated polarization as high as 53 μC/cm2. We show the correlation between the computed polarization reversal barrier and the experimental coercive fields.
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Cited by
Stabilizing the ferroelectric phase in doped hafnium oxide
Hoffmann, M., Schroeder, U., Schenk, T., Shimizu, T., Funakubo, H., Sakata, O., Pohl, D., Drescher, M., Adelmann, C., Materlik, R., et al. (2015) · Journal of Applied Physics · doi:10.1063/1.4927805 · Cited by 606
Self-citationReview and perspective on ferroelectric HfO2-based thin films for memory applications
Park, M. H., Lee, Y. H., Mikolajick, T., Schroeder, U., & Hwang, C. S. (2018) · MRS Communications · doi:10.1557/mrc.2018.175 · Cited by 579
Self-citationScale-free ferroelectricity induced by flat phonon bands in HfO 2
Lee, H.-J., Lee, M., Lee, K., Jo, J., Yang, H., Kim, Y., Chae, S. C., Waghmare, U., & Lee, J. H. (2020) · Science · doi:10.1126/science.aba0067 · Cited by 485
Lanthanum-Doped Hafnium Oxide: A Robust Ferroelectric Material
Schroeder, U., Richter, C., Park, M. H., Schenk, T., Pešić, M., Hoffmann, M., Fengler, F. P. G., Pohl, D., Rellinghaus, B., Zhou, C., et al. (2018) · Inorganic Chemistry · doi:10.1021/acs.inorgchem.7b03149 · Cited by 367
Self-citationComplex Internal Bias Fields in Ferroelectric Hafnium Oxide
Schenk, T., Hoffmann, M., Ocker, J., Pešić, M., Mikolajick, T., & Schroeder, U. (2015) · ACS Applied Materials & Interfaces · doi:10.1021/acsami.5b05773 · Cited by 280
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Metadata
- Authors
- Clima, S., Wouters, D. J., Adelmann, C., Schenk, T., Schroeder, U., Jurczak, M., & Pourtois, G.
- Venue
- Applied Physics Letters
- Publisher
- AIP Publishing
- Published
- 2014-03-03
- Volume
- 104
- Issue
- 9
- ISSN
- 0003-6951 (ISSN-L)
- 1077-3118
- OpenAlex
- W1985130467
- Cited by
- 244
- References
- 0
- FWCI
- 6.90
- Type
- journal article
- Language
- en
- Open access
- closed
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- Clima, S., Wouters, D. J., Adelmann, C., Schenk, T., Schroeder, U., Jurczak, M., & Pourtois, G. (2014). Identification of the ferroelectric switching process and dopant-dependent switching properties in orthorhombic HfO2: A first principles insight. Applied Physics Letters. https://doi.org/10.1063/1.4867975
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