The DOI matches its Crossref record; 21 of the 21 references it cites were found in a registry or an index.
Measuring the switching dynamics and energy efficiency of tantalum oxide memristors
Abstract
We measured the real-time switching of metal-oxide memristors with sub-nanosecond resolution and recorded the evolution of the current and voltage during both ON (set) and OFF (reset) events. From these we determined the dynamical behavior of the conductivity for different applied bias amplitudes. Quantitative analysis of the energy cost and switching dynamics showed 115 fJ for ON-switching and 13 pJ for OFF-switching when resistance change was limited to 200%. Results are presented that show a favorable scaling with speed in terms of energy cost and reducing unnecessary damage to the devices.
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Strukov, D. B., Snider, G. S., Stewart, D. R., & Williams, R. S. (2008) · Nature · doi:10.1038/nature06932 · Cited by 11,828
Self-citationMemristor—The Missing Circuit Element
Chua, L. (1971) · IEEE Transactions on Circuit Theory · doi:10.1109/tct.1971.1083337 · Cited by 10,268
Nanoionics-based resistive switching memories
Waser, R., & Aono, M. (2007) · Nature Materials · doi:10.1038/nmat2023 · Cited by 4,923
Lee, M.-J., Lee, C. B., Lee, D., Lee, S. R., Chang, M., Hur, J. H., Kim, Y.-B., Kim, C.-J., Seo, D. H., Seo, S., et al. (2011) · Nature Materials · doi:10.1038/nmat3070 · Cited by 2,228
Ikeda, S., Hayakawa, J., Ashizawa, Y., Lee, Y. M., Miura, K., Hasegawa, H., Tsunoda, M., Matsukura, F., & Ohno, H. (2008) · Applied Physics Letters · doi:10.1063/1.2976435 · Cited by 1,599
Resistance switching memories are memristors
Chua, L. (2011) · Applied Physics A · doi:10.1007/s00339-011-6264-9 · Cited by 1,434
Reproducible switching effect in thin oxide films for memory applications
Beck, A., Bednorz, J. G., Gerber, C., Rossel, C., & Widmer, D. (2000) · Applied Physics Letters · doi:10.1063/1.126902 · Cited by 1,129
Sawa, A., Fujii, T., Kawasaki, M., & Tokura, Y. (2004) · Applied Physics Letters · doi:10.1063/1.1812580 · Cited by 748
Electrical phenomena in amorphous oxide films
Dearnaley, G., Stoneham, A. M., & Morgan, D. V. (1970) · Reports on Progress in Physics · doi:10.1088/0034-4885/33/3/306 · Cited by 731
Sub-nanosecond switching of a tantalum oxide memristor
Torrezan, A. C., Strachan, J. P., Medeiros-Ribeiro, G., & Williams, R. S. (2011) · Nanotechnology · doi:10.1088/0957-4484/22/48/485203 · Cited by 701
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Research works printed but not linked: 1
- Miao F, Adv. Mater.
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Serb, A., Khiat, A., & Prodromakis, T. (2021) · International Journal of Circuit Theory and Applications · doi:10.1002/cta.3010 · Cited by 2
Neuromorphic Computing Based on Memristor Dynamics
Duan, Q., Xiao, Z., Ke, Y., & Yang, Y. (2022) · Springer eBooks · doi:10.1007/978-3-031-11506-6_1 · Cited by 1
Designing memristors: Physics, materials science and engineering
Ribeiro, G. M., Yang, J. J., Nickel, J. H., Torrezan, A. C., Strachan, J. P., & Williams, R. S. (2012) · IEEE International Symposium on Circuits and Systems proceedings · doi:10.1109/iscas.2012.6271813 · Cited by 1
Self-citationNiehörster, S., & Thomas, A. (2014) · Methods in molecular biology · doi:10.1007/978-1-4939-2239-0_16 · Cited by 1
In-place Repair for Resistive Memories Utilizing Complementary Resistive Switches
Ghofrani, A., Lastras-Montaño, M. Á., Wang, Y., & Cheng, K.-T. T. (2016) · International Symposium on Low Power Electronics and Design (ISLPED) · doi:10.1145/2934583.2934590 · Cited by 1
Truong, S. N., Pham, K. V., Yang, W., & Min, K. (2017) · International Conference on System Science and Engineering · doi:10.1109/icsse.2017.8030931
Multibit memory operation of metal-oxide bi-layer memristors
Stathopoulos, S., Khiat, A., Trapatseli, M., Cortese, S., Serb, A., Valov, I., & Prodromakis, T. (2017) · ePrints Soton (University of Southampton) · doi:10.48550/arxiv.1704.03313
Hybrid Crossbar Architecture for a Memristor Based MemoryPreprint
Yakopcic, C., & Taha, T. M. (2013) · arXiv (Cornell University) · doi:10.48550/arxiv.1302.6515
Mathematical simulation of memristive for classification in machine learning
Hasan, A. A., Abdullah, N. A. Z., & Abbood, A. D. (2022) · Periodicals of Engineering and Natural Sciences (PEN) · doi:10.21533/pen.v10i2.2793
A review on footsteps of a revolution in electronics: Spin memristors
AL-EDRESI, A., Aydın, G., Abboubi, M. E., Kazan, S., Candan, İ., & San, S. E. (2025) · Materials Today Physics · doi:10.1016/j.mtphys.2025.101760
Memristors for neuromorphic computing systems: basic parameters and methods of their optimization
Ilin, A. S., Matsukatova, A. N., Николаевич, М. М., Emelyanov, A. V., Rylkov, V. V., Demin, V. A., Анатольевич, Ф. П., Kashkarov, P. K., & Kovalchuk, M. V. (2025) · Uspekhi Fizicheskih Nauk · doi:10.3367/ufnr.2025.09.040037
Vibrational spectra of a − Ta 2 O 5 : A first-principles investigation
Giacomazzi, L., & Umari, P. (2026) · Physical Review Materials · doi:10.1103/65c6-xfqn
Metadata
- Authors
- Strachan, J. P., Torrezan, A. C., Medeiros-Ribeiro, G., & Williams, R. S.
- Affiliations
- Hewlett-Packard (United States) (US)
- Venue
- Nanotechnology
- Publisher
- IOP Publishing
- Published
- 2011-11-23
- Volume
- 22
- Issue
- 50
- Pages
- 505402
- ISSN
- 0957-4484 (ISSN-L)
- 1361-6528
- OpenAlex
- W2167205991
- Cited by
- 114
- References
- 21
- Citations by year
- 2026: 2 · 2025: 2 · 2024: 5 · 2023: 8 · 2022: 5 · 2021: 9 · 2020: 7 · 2019: 6 · 2018: 2 · 2017: 10 · 2016: 15 · 2015: 12 · 2014: 12 · 2013: 15 · 2012: 4
- FWCI
- 6.94
- Type
- journal article
- Language
- en
- Open access
- closed
- Locations
- Nanotechnology (publishedVersion)
- PubMed (publishedVersion)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Advanced Memory and Neural Computing
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Ferroelectric and Negative Capacitance Devices
- Physical Sciences › Materials Science › Materials Chemistry › Phase-change materials and chalcogenides
- Keywords
- tantalum oxide, memristors, switching dynamics, energy efficiency, energy costs
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