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Measuring the switching dynamics and energy efficiency of tantalum oxide memristors
Abstract
We measured the real-time switching of metal-oxide memristors with sub-nanosecond resolution and recorded the evolution of the current and voltage during both ON (set) and OFF (reset) events. From these we determined the dynamical behavior of the conductivity for different applied bias amplitudes. Quantitative analysis of the energy cost and switching dynamics showed 115 fJ for ON-switching and 13 pJ for OFF-switching when resistance change was limited to 200%. Results are presented that show a favorable scaling with speed in terms of energy cost and reducing unnecessary damage to the devices.
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Dodson, B., Goul, R. W., Marshall, A. D., Aafiya, Bray, K. R., Ewing, D., Walsh, M. J., & Wu, J. Z. (2024) · Nano Express · doi:10.1088/2632-959x/ad34a5 · Cited by 5
Mechanism of electrical shorting failure mode in resistive switching
Lohn, A. J., Mickel, P. R., & Marinella, M. J. (2014) · Journal of Applied Physics · doi:10.1063/1.4890635 · Cited by 5
Linearly separable pattern classification using memristive crossbar circuits
Singh, K., Sahu, C., & Singh, J. (2014) · International Symposium on Quality Electronic Design (ISQED) · doi:10.1109/isqed.2014.6783343 · Cited by 7
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Emerging Memory Devices: Assessment and Benchmarking
Marinella, M. J., & Zhirnov, V. V. (2014) · Wiley eBooks · doi:10.1002/9781118958254.ch13 · Cited by 5
Reliability considerations and radiation testing of memristor devices
DeIonno, E., & White, A. L. (2015) · IEEE Aerospace Conference (AERO) · doi:10.1109/aero.2015.7119290 · Cited by 4
The Art and Science of Constructing a Memristor Model: Updated
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Self-citationQuasistatic and Pulse Measuring Techniques
Torrezan, A. C., Medeiros‐Ribeiro, G., & Tiedke, S. (2016) · doi:10.1002/9783527680870.ch12 · Cited by 3
Self-citation
Metadata
- Authors
- Strachan, J. P., Torrezan, A. C., Medeiros-Ribeiro, G., & Williams, R. S.
- Affiliations
- Hewlett-Packard (United States) (US)
- Venue
- Nanotechnology
- Publisher
- IOP Publishing
- Published
- 2011-11-23
- Volume
- 22
- Issue
- 50
- Pages
- 505402
- ISSN
- 0957-4484 (ISSN-L)
- 1361-6528
- OpenAlex
- W2167205991
- Cited by
- 114
- References
- 21
- Citations by year
- 2026: 2 · 2025: 2 · 2024: 5 · 2023: 8 · 2022: 5 · 2021: 9 · 2020: 7 · 2019: 6 · 2018: 2 · 2017: 10 · 2016: 15 · 2015: 12 · 2014: 12 · 2013: 15 · 2012: 4
- FWCI
- 6.94
- Type
- journal article
- Language
- en
- Open access
- closed
- Locations
- Nanotechnology (publishedVersion)
- PubMed (publishedVersion)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Advanced Memory and Neural Computing
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Ferroelectric and Negative Capacitance Devices
- Physical Sciences › Materials Science › Materials Chemistry › Phase-change materials and chalcogenides
- Keywords
- tantalum oxide, memristors, switching dynamics, energy efficiency, energy costs
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