The DOI matches its Crossref record; 21 of the 21 references it cites were found in a registry or an index.
Measuring the switching dynamics and energy efficiency of tantalum oxide memristors
Abstract
We measured the real-time switching of metal-oxide memristors with sub-nanosecond resolution and recorded the evolution of the current and voltage during both ON (set) and OFF (reset) events. From these we determined the dynamical behavior of the conductivity for different applied bias amplitudes. Quantitative analysis of the energy cost and switching dynamics showed 115 fJ for ON-switching and 13 pJ for OFF-switching when resistance change was limited to 200%. Results are presented that show a favorable scaling with speed in terms of energy cost and reducing unnecessary damage to the devices.
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Li‐Ion Synaptic Transistor for Low Power Analog Computing
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Metadata
- Authors
- Strachan, J. P., Torrezan, A. C., Medeiros-Ribeiro, G., & Williams, R. S.
- Affiliations
- Hewlett-Packard (United States) (US)
- Venue
- Nanotechnology
- Publisher
- IOP Publishing
- Published
- 2011-11-23
- Volume
- 22
- Issue
- 50
- Pages
- 505402
- ISSN
- 0957-4484 (ISSN-L)
- 1361-6528
- OpenAlex
- W2167205991
- Cited by
- 114
- References
- 21
- Citations by year
- 2026: 2 · 2025: 2 · 2024: 5 · 2023: 8 · 2022: 5 · 2021: 9 · 2020: 7 · 2019: 6 · 2018: 2 · 2017: 10 · 2016: 15 · 2015: 12 · 2014: 12 · 2013: 15 · 2012: 4
- FWCI
- 6.94
- Type
- journal article
- Language
- en
- Open access
- closed
- Locations
- Nanotechnology (publishedVersion)
- PubMed (publishedVersion)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Advanced Memory and Neural Computing
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Ferroelectric and Negative Capacitance Devices
- Physical Sciences › Materials Science › Materials Chemistry › Phase-change materials and chalcogenides
- Keywords
- tantalum oxide, memristors, switching dynamics, energy efficiency, energy costs
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