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Simulation of terahertz generation at semiconductor surfaces

Johnston, M. B., Whittaker, D. M., Corchia, A., Davies, A. G., Linfield, E. H.·2002·Physical Review B
DOI 10.1103/physrevb.65.165301
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Abstract

A three-dimensional semiclassical Monte Carlo model is presented to describe fast carrier dynamics in semiconductors after photoexcitation. Far-field terahertz (THz) radiation patterns are calculated for both InAs and GaAs with, and without, application of external magnetic fields. This analysis distinguishes between surface depletion field and photo-Dember mechanisms for generating THz radiation. The theoretical model reproduces experimental data from GaAs and InAs, and demonstrates that a magnetic field enhances THz emission by rotating the emitting dipole with respect to the sample surface, leading to an increased coupling of radiation through the surface.

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Metadata

Authors
Johnston, M. B., Whittaker, D. M., Corchia, A., Davies, A. G., & Linfield, E. H.
Venue
Physical Review B
Publisher
American Physical Society (APS)
Published
2002-03-18
Volume
65
Issue
16
ISSN
  • 0163-1829 (ISSN-L)
  • 1095-3795
DOI
10.1103/physrevb.65.165301
OpenAlex
W2120821764
Cited by
364
References
0
FWCI
18.93
Type
journal article
Language
en
Open access
closed
Licence
link.aps.org/licenses/aps-default-license (vor)

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CoChat. (2026). Citation check: Simulation of terahertz generation at semiconductor surfaces. https://app.cochat.ai/papers/10.1103/physrevb.65.165301
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Johnston, M. B., Whittaker, D. M., Corchia, A., Davies, A. G., & Linfield, E. H. (2002). Simulation of terahertz generation at semiconductor surfaces. Physical Review B. https://doi.org/10.1103/physrevb.65.165301

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