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Electron spin relaxation times of phosphorus donors in silicon
Open accessAbstract
Donor electron spins in phosphorus-doped silicon (Si:P) are a candidate two-level system (qubit) for quantum information processing. Spin echo measurements of isotopically purified ${}^{28}\mathrm{S}\mathrm{i}:\mathrm{P}$ are presented that show exceptionally long transverse relaxation (decoherence) times, ${T}_{2},$ at low temperature. Below $\ensuremath{\sim}10\mathrm{K}$ the spin decoherence is shown to be controlled by instantaneous diffusion and at higher temperatures by an Orbach process. ${T}_{2}$ for small pulse turning angles is 14 ms at 7 K and extrapolates to $\ensuremath{\sim}60\mathrm{ms}$ for an isolated spin, over 2 orders of magnitude longer than previously demonstrated.
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Metadata
- Authors
- Tyryshkin, A. M., Lyon, S. A., Astashkin, A. V., & Raitsimring, A. M.
- Venue
- Physical Review B
- Publisher
- American Physical Society (APS)
- Published
- 2003-11-20
- Volume
- 68
- Issue
- 19
- ISSN
- 0163-1829 (ISSN-L)
- 1095-3795
- OpenAlex
- W2031509348
- Cited by
- 408
- References
- 15
- FWCI
- 16.87
- Type
- journal article
- Language
- en
- Open access
- green
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