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Cited by 278

The DOI matches its Crossref record; 22 of the 22 references it cites were found in a registry or an index.

Dependence of electronic properties of epitaxial few-layer graphene on the number of layers investigated by photoelectron emission microscopy

Hibino, H., Kageshima, H., Kotsugi, M., Maeda, F., Guo, F.-Z., Watanabe, Y.·2009·Physical Review B
DOI 10.1103/physrevb.79.125437
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Abstract

We used spectroscopic photoemission and low-energy electron microscopy to investigate the electronic properties of epitaxial few-layer graphene grown on 6H-SiC(0001). Photoelectron emission microscopy (PEEM) images using secondary electrons (SEs) and $\text{C}\text{ }1s$ photoelectrons can discriminate areas with different numbers of graphene layers. The SE emission spectra indicate that the work function increases with the number of graphene layers and that unoccupied states in the few-layer graphene promote SE emission. The $\text{C}\text{ }1s$ PEEM images indicate that the $\text{C}\text{ }1s$ core level shifts to lower binding energies as the number of graphene layers increases, which is consistent with the reported thickness dependence of the Dirac point energy.

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Metadata

Authors
Hibino, H., Kageshima, H., Kotsugi, M., Maeda, F., Guo, F.-Z., & Watanabe, Y.
Venue
Physical Review B
Publisher
American Physical Society (APS)
Published
2009-03-30
Volume
79
Issue
12
ISSN
  • 1098-0121 (ISSN-L)
  • 1550-235X
DOI
10.1103/physrevb.79.125437
OpenAlex
W2077793170
Cited by
278
References
22
FWCI
10.05
Type
journal article
Language
en
Open access
closed

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