Impact of Non-Ideal Characteristics of Resistive Synaptic Devices on Implementing Convolutional Neural Networks
Abstract
Emerging non-volatile memory (eNVM) based resistive synaptic devices have shown great potential for implementing deep neural networks (DNNs). However, the eNVM devices typically suffer from various non-ideal effects which may degrade the performance of the system. Based on a representative convolutional neural network (CNN) model for CIFAR-10 dataset, this paper comprehensively investigates the impact of those nonideal characteristics, such as nonlinearity and asymmetry of conductance tuning, variations, endurance and retention, on the training/inference accuracy. The compact models of the device non-ideal effects are incorporated into the TensorFlow framework. Our simulation results suggest that 1) the training accuracy is more sensitive to the asymmetry of conductance tuning than the nonlinearity; 2) the conductance range variation does not degrade the training accuracy, instead, a small variation can even reduce the accuracy loss introduced by asymmetry; 3) device-to-device variation can also remedy the accuracy loss due to asymmetry while cycle-to-cycle variation leads to significant accuracy degradation; 4) the accuracy degradation will not be noticeable if the endurance cycles are more than 7,000 cycles; and 5) different drifting modes affect the inference accuracy differently, and the best case is where the conductance is drifting up/down randomly.
Integrity signals
Registry
Cites
Statistics
Claims the paper makes
Claims other papers make about this one
Each is checked against this paper’s own text: does it say what the citing paper says it does?
Due to fabrication imperfections, non-ideal behaviors are observed in memristor and memcapacitor devices, including variations in conductance, capacitance, device-to-device, cycle-to-cycle, nonlinearity, and programming failure.
“Due to fabrication imperfections, non-ideal behaviors are observed in memristor and memcapacitor devices. These include variations in conductance, capacitance, device-todevice (D2D), and cycle-to-cycle (C2C), as well as nonlinearity and programming failure [28].”
From Framework for In-Memory Computing Based on Memristor and Memcapacitor for On-Chip Training (2023) · cites this paper as [28]
Cites
Deep Residual Learning for Image Recognition
He, K., Zhang, X., Ren, S., & Sun, J. (2016) · 2016 IEEE Conference on Computer Vision and Pattern Recognition (CVPR) · doi:10.1109/cvpr.2016.90 · Cited by 235,474 · see citing works
Very Deep Convolutional Networks for Large-Scale Image Recognition
Simonyan, K., & Zisserman, A. (2014) · arXiv · doi:10.48550/arxiv.1409.1556 · Cited by 74,248 · see citing works
Nanoscale Memristor Device as Synapse in Neuromorphic Systems
Jo, S. H., Chang, T., Ebong, I., Bhadviya, B. B., Mazumder, P., & Lu, W. (2010) · Nano Letters · doi:10.1021/nl904092h · Cited by 4,174 · see citing works
Eyeriss: An Energy-Efficient Reconfigurable Accelerator for Deep Convolutional Neural Networks
Chen, Y.-H., Krishna, T., Emer, J. S., & Sze, V. (2017) · IEEE Journal of Solid-State Circuits · doi:10.1109/jssc.2016.2616357 · Cited by 3,247 · see citing works
Training and operation of an integrated neuromorphic network based on metal-oxide memristors
Prezioso, M., Merrikh-Bayat, F., Hoskins, B. D., Adam, G. C., Likharev, K. K., & Strukov, D. B. (2015) · Nature · doi:10.1038/nature14441 · Cited by 3,001 · see citing works
Courbariaux, M., Hubara, I., Soudry, D., El-Yaniv, R., & Bengio, Y. (2016) · arXiv · doi:10.48550/arxiv.1602.02830 · Cited by 2,106 · see citing works
Nanoelectronic programmable synapses based on phase change materials for brain-inspired computing
Kuzum, D., Jeyasingh, R. G. D., Lee, B., & Wong, H.-S. P. (2012) · Nano Letters · doi:10.1021/nl201040y · Cited by 1,267 · cited 3× · see citing works
“In recent years, emerging non-volatile memory (eNVM) based resistive synaptic devices [5], such as phase change memory (PCM) [6], [7], resistive random access memory (RRAM) [8]–[11], and ferroelectric field effect transistor (FeFET) [12], [13] are considered as promising candidates to replace SRAM cells due to the sma…”
BackgroundNeuro-Inspired Computing With Emerging Nonvolatile Memorys
Yu, S. (2018) · Proceedings of the IEEE · doi:10.1109/jproc.2018.2790840 · Cited by 1,170 · see citing works
Self-citationEquivalent-accuracy accelerated neural-network training using analogue memory
Ambrogio, S., Narayanan, P., Tsai, H., Shelby, R. M., Boybat, I., di Nolfo, C., Sidler, S., Giordano, M., Bodini, M., Farinha, N. C. P., et al. (2018) · Nature · doi:10.1038/s41586-018-0180-5 · Cited by 1,151 · see citing works
Burr, G. W., Shelby, R. M., Sidler, S., di Nolfo, C., Jang, J., Boybat, I., Shenoy, R. S., Narayanan, P., Virwani, K., Giacometti, E. U., et al. (2015) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2015.2439635 · Cited by 936 · see citing works
Efficient and self-adaptive in-situ learning in multilayer memristor neural networks
Li, C., Belkin, D., Li, Y., Yan, P., Hu, M., Ge, N., Jiang, H., Montgomery, E., Lin, P., Wang, Z., et al. (2018) · Nature Communications · doi:10.1038/s41467-018-04484-2 · Cited by 931 · see citing works
Choi, S., Tan, S. H., Li, Z., Kim, Y., Choi, C., Chen, P.-Y., Yeon, H., Yu, S., & Kim, J. (2018) · Nature Materials · doi:10.1038/s41563-017-0001-5 · Cited by 690 · see citing works
Self-citationChen, P.-Y., Peng, X., & Yu, S. (2018) · IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems · doi:10.1109/tcad.2018.2789723 · Cited by 655 · see citing works
Self-citationFerroelectric FET analog synapse for acceleration of deep neural network training
Jerry, M., Chen, P.-Y., Zhang, J., Sharma, P., Ni, K., Yu, S., & Datta, S. (2017) · 2017 IEEE International Electron Devices Meeting (IEDM) · doi:10.1109/iedm.2017.8268338 · Cited by 599 · see citing works
Self-citationMemristor Crossbar-Based Neuromorphic Computing System: A Case Study
Hu, M., Li, H. H., Chen, Y., Wu, Q., Rose, G. S., & Linderman, R. (2014) · IEEE Transactions on Neural Networks and Learning Systems · doi:10.1109/tnnls.2013.2296777 · Cited by 414 · see citing works
Training and Inference with Integers in Deep Neural NetworksPreprint
Wu, S., Li, G., Chen, F., & Shi, L. (2018) · arXiv (Cornell University) · doi:10.48550/arxiv.1802.04680 · Cited by 359 · see citing works
UNPU: An Energy-Efficient Deep Neural Network Accelerator With Fully Variable Weight Bit Precision
Lee, J., Kim, C., Kang, S., Shin, D., Kim, S., & Yoo, H.-J. (2019) · IEEE Journal of Solid-State Circuits · doi:10.1109/jssc.2018.2865489 · Cited by 335 · see citing works
Oh, S., Kim, T., Kwak, M., Song, J., Woo, J., Jeon, S., Yoo, I. K., & Hwang, H. (2017) · IEEE Electron Device Letters · doi:10.1109/led.2017.2698083 · Cited by 277 · see citing works
XNOR-RRAM: A scalable and parallel resistive synaptic architecture for binary neural networks
Sun, X., Yin, S., Peng, X., Liu, R., Seo, J.-S., & Yu, S. (2018) · 2018 Design, Automation & Test in Europe Conference & Exhibition (DATE) · doi:10.23919/date.2018.8342235 · Cited by 246 · see citing works
Self-citationTaO x -based resistive switching memories: prospective and challenges
Prakash, A., Jana, D., & Maikap, S. (2013) · Nanoscale Research Letters · doi:10.1186/1556-276x-8-418 · Cited by 222 · see citing works
Visual Pattern Extraction Using Energy-Efficient “2-PCM Synapse” Neuromorphic Architecture
Bichler, O., Suri, M., Querlioz, D., Vuillaume, D., de Salvo, B., & Gamrat, C. (2012) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2012.2197951 · Cited by 213 · see citing works
Resistive memory device requirements for a neural algorithm accelerator
Agarwal, S., Plimpton, S. J., Hughart, D. R., Hsia, A. H., Richter, I., Cox, J. A., James, C. D., & Marinella, M. J. (2016) · 2016 International Joint Conference on Neural Networks (IJCNN) · doi:10.1109/ijcnn.2016.7727298 · Cited by 213 · see citing works
A Methodology to Improve Linearity of Analog RRAM for Neuromorphic Computing
Wu, W., Wu, H., Gao, B., Yao, P., Zhang, X., Peng, X., Yu, S., & Qian, H. (2018) · 2018 IEEE Symposium on VLSI Technology · doi:10.1109/vlsit.2018.8510690 · Cited by 197 · see citing works
Self-citationA 42pJ/decision 3.12TOPS/W robust in-memory machine learning classifier with on-chip training
Gonugondla, S. K., Kang, M., & Shanbhag, N. R. (2018) · Digest of technical papers/Digest of technical papers - IEEE International Solid-State Circuits Conference · doi:10.1109/isscc.2018.8310398 · Cited by 195 · see citing works
Wang, I., Chang, C.-C., Chiu, L.-W., Chou, T., & Hou, T. (2016) · Nanotechnology · doi:10.1088/0957-4484/27/36/365204 · Cited by 186 · see citing works
Fully parallel write/read in resistive synaptic array for accelerating on-chip learning
Gao, L., Wang, I., Chen, P.-Y., Vrudhula, S. B. K., Seo, J.-S., Cao, Y. K., Hou, T., & Yu, S. (2015) · Nanotechnology · doi:10.1088/0957-4484/26/45/455204 · Cited by 138 · see citing works
Self-citationImprovement of data retention in HfO2/Hf 1T1R RRAM cell under low operating current
Chen, Y. Y., Komura, M., Degraeve, R., Govoreanu, B., Goux, L., Fantini, A., Raghavan, N., Clima, S., Zhang, L., Belmonte, A., et al. (2013) · Technical digest - International Electron Devices Meeting/Technical digest · doi:10.1109/iedm.2013.6724598 · Cited by 103 · see citing works
Sun, X., Wang, P., Ni, K., Datta, S., & Yu, S. (2018) · Technical digest - International Electron Devices Meeting/Technical digest · doi:10.1109/iedm.2018.8614611 · Cited by 103 · see citing works
Self-citationProgramming Protocol Optimization for Analog Weight Tuning in Resistive Memories
Gao, L., Chen, P.-Y., & Yu, S. (2015) · IEEE Electron Device Letters · doi:10.1109/led.2015.2481819 · Cited by 101 · see citing works
Self-citationInvestigation of statistical retention of filamentary analog RRAM for neuromophic computing
Zhao, M., Wu, H., Gao, B., Zhang, Q., Wu, W., Wang, S., Xi, Y., Wu, D., Deng, N., Yu, S., et al. (2017) · 2017 IEEE International Electron Devices Meeting (IEDM) · doi:10.1109/iedm.2017.8268522 · Cited by 95 · see citing works
Self-citationResistive Memory-Based Analog Synapse: The Pursuit for Linear and Symmetric Weight Update
Woo, J., & Yu, S.-M. (2018) · IEEE Nanotechnology Magazine · doi:10.1109/mnano.2018.2844902 · Cited by 88 · see citing works
Self-citationZhao, M., Wu, H., Gao, B., Sun, X., Liu, Y., Yao, P., Xi, Y., Li, X., Zhang, Q., Wang, K., et al. (2018) · Technical digest - International Electron Devices Meeting/Technical digest · doi:10.1109/iedm.2018.8614664 · Cited by 72 · see citing works
Self-citationParallel Architecture With Resistive Crosspoint Array for Dictionary Learning Acceleration
Kadetotad, D. V., Xu, Z., Mohanty, A., Chen, P.-Y., Lin, B., Ye, J., Vrudhula, S. B. K., Yu, S., Cao, Y. K., & Seo, J.-S. (2015) · IEEE Journal on Emerging and Selected Topics in Circuits and Systems · doi:10.1109/jetcas.2015.2426495 · Cited by 63 · see citing works
Self-citationImprovement of data retention in HfO2 / Hf 1T1R RRAM cell under low operating current
Chen, Y. Y., Komura, M., Degraeve, R., Govoreanu, B., Goux, L., Fantini, A., Raghavan, N., Clima, S., Zhang, L., Belmonte, A., et al. (2013) · Cited by 55 · see citing works
Reliability perspective of resistive synaptic devices on the neuromorphic system performance
Chen, P.-Y., & Yu, S. (2018) · IEEE International Reliability Physics Symposium proceedings · doi:10.1109/irps.2018.8353615 · Cited by 48 · see citing works
Self-citationZhang, B., Chen, L.-Y., & Verma, N. (2019) · IEEE International Conference on Acoustics Speech and Signal Processing · doi:10.1109/icassp.2019.8683521 · Cited by 24 · see citing works
A Model for Multilevel Phase-Change Memories Incorporating Resistance Drift Effects
Cobley, R. A., Wright, C. D., & Diosdado, J. A. V. (2014) · IEEE Journal of the Electron Devices Society · doi:10.1109/jeds.2014.2357577 · Cited by 12 · see citing works
Flagged first, then by citations
3 of the 40 references couldn’t be matched to a known paper.
Cited by
Sorted by citations
Hardware implementation of memristor-based artificial neural networks
Aguirre, F., Sebastian, A., Le Gallo, M., Song, W., Wang, T., Yang, J. J., Lu, W., Chang, M.-F., Ielmini, D., Yang, Y., et al. (2024) · Nature Communications · doi:10.1038/s41467-024-45670-9 · Cited by 499 · see citing works
“The same philosophy was adopted by Sun et al. 229 , placing special emphasis on the effect of the non-linear and quantized nature of the synaptic weight update.”
Compute-in-Memory Chips for Deep Learning: Recent Trends and Prospects
Yu, S., Jiang, H., Huang, S., Peng, X., & Lu, A. (2021) · IEEE Circuits and Systems Magazine · doi:10.1109/mcas.2021.3092533 · Cited by 399 · see citing works
Self-citationRecent Advances and Future Prospects for Memristive Materials, Devices, and Systems
Song, M., Kang, J., Zhang, X., Ji, W., Ascoli, A., Messaris, I., Demirkol, A. Ş., Dong, B., Aggarwal, S., Wan, W., et al. (2023) · ACS Nano · doi:10.1021/acsnano.3c03505 · Cited by 314 · see citing works
RRAM for Compute-in-Memory: From Inference to Training
Yu, S., Shim, W., Peng, X., & Luo, Y. (2021) · IEEE Transactions on Circuits and Systems I Regular Papers · doi:10.1109/tcsi.2021.3072200 · Cited by 148 · see citing works
Self-citationChakraborty, I., Ali, M., Ankit, A., Jain, S., Roy, S., Sridharan, S., Agrawal, A., Raghunathan, A., & Roy, K. (2020) · Proceedings of the IEEE · doi:10.1109/jproc.2020.3003007 · Cited by 140 · see citing works
Nanoscale resistive switching devices for memory and computing applications
Lee, S. H., Zhu, X., & Lu, W. D. (2020) · Nano Research · doi:10.1007/s12274-020-2616-0 · Cited by 118 · see citing works
Kireev, D., Liu, S., Jin, H., Xiao, T. P., Bennett, C. H., Akinwande, D., & Incorvia, J. A. C. (2022) · Nature Communications · doi:10.1038/s41467-022-32078-6 · Cited by 1 · see citing works
GENIEx: A Generalized Approach to Emulating Non-Ideality in Memristive Xbars using Neural Networks
Chakraborty, I., Ali, M., Kim, D. E., Ankit, A., & Roy, K. (2020) · ACM/IEEE Design Automation Conference (DAC) · doi:10.1109/dac18072.2020.9218688 · Cited by 109 · see citing works
In-Memory Computing in Emerging Memory Technologies for Machine Learning: An Overview
Roy, K., Chakraborty, I., Ali, M., Ankit, A., & Agrawal, A. (2020) · ACM/IEEE Design Automation Conference (DAC) · doi:10.1109/dac18072.2020.9218505 · Cited by 90 · see citing works
Compute-in-Memory with Emerging Nonvolatile-Memories: Challenges and Prospects
Yu, S., Sun, X., Peng, X., & Huang, S. (2020) · Custom Integrated Circuits Conference · doi:10.1109/cicc48029.2020.9075887 · Cited by 83 · see citing works
Self-citationMemTorch: An Open-source Simulation Framework for Memristive Deep Learning Systems
Lammie, C., Xiang, W., Linares-Barranco, B., & Azghadi, M. R. (2022) · Neurocomputing · doi:10.1016/j.neucom.2022.02.043 · Cited by 85 · see citing works
Li, W., Sun, X., Huang, S., Jiang, H., & Yu, S. (2022) · IEEE Journal of Solid-State Circuits · doi:10.1109/jssc.2022.3163197 · Cited by 77 · see citing works
Self-citationLiu, S., Xiao, T. P., Cui, C., Incorvia, J. A. C., Bennett, C. H., & Marinella, M. J. (2021) · Applied Physics Letters · doi:10.1063/5.0046032 · Cited by 69 · see citing works
HfO x /AlO y Superlattice‐Like Memristive Synapse
Wang, C., Mao, G., Huang, M., Huang, E., Zhang, Z., Yuan, J., Cheng, W., Xue, K., Wang, X., & Miao, X. (2022) · Advanced Science · doi:10.1002/advs.202201446 · Cited by 69 · see citing works
Shape‐Dependent Multi‐Weight Magnetic Artificial Synapses for Neuromorphic Computing
Leonard, T., Liu, S., Alamdar, M., Jin, H., Cui, C., Akinola, O. G., Xue, L., Xiao, T. P., Friedman, J. S., Marinella, M. J., et al. (2022) · Advanced Electronic Materials · doi:10.1002/aelm.202200563 · Cited by 68 · see citing works
Kim, K., Song, M. S., Hwang, H., Hwang, S., & Kim, H. (2024) · Frontiers in Neuroscience · doi:10.3389/fnins.2024.1279708 · Cited by 70 · see citing works
Park, J., Jang, Y., Lee, J.-K., An, S., Mok, J., & Lee, S. (2023) · Advanced Electronic Materials · doi:10.1002/aelm.202201306 · Cited by 64 · see citing works
Byun, K., Choi, I., Kwon, S., Kim, Y., Kang, D., Cho, Y. W., Yoon, S. K., & Kim, S. (2022) · Advanced Materials Technologies · doi:10.1002/admt.202200884 · Cited by 64 · see citing works
Kim, T., Kim, S., Hong, K., Park, J., Hwang, Y., Park, B., & Kim, H. (2021) · Chaos Solitons & Fractals · doi:10.1016/j.chaos.2021.111587 · Cited by 61 · see citing works
Neuromorphic devices based on fluorite‐structured ferroelectrics
Lee, D. H., Park, G. H., Kim, S. H., Park, J. Y., Yang, K., Slesazeck, S., Mikolajick, T., & Park, M. H. (2022) · InfoMat · doi:10.1002/inf2.12380 · Cited by 59 · see citing works
Luo, Y., & Yu, S.-M. (2020) · IEEE transactions on computers · doi:10.1109/tc.2020.3000218 · Cited by 37 · see citing works
Self-citationMemristor-based storage system with convolutional autoencoder-based image compression network
Feng, Y., Zhang, Y., Zhou, Z., Huang, P. C., Liu, L., Liu, X., & Kang, J. (2024) · Nature Communications · doi:10.1038/s41467-024-45312-0 · Cited by 62 · see citing works
CIMAT: A Compute-In-Memory Architecture for On-chip Training Based on Transpose SRAM Arrays
Jiang, H., Peng, X., Huang, S., & Yu, S. (2020) · IEEE Transactions on Computers · doi:10.1109/tc.2020.2980533 · Cited by 56 · see citing works
Self-citationAND Flash Array Based on Charge Trap Flash for Implementation of Convolutional Neural Networks
Choi, H.-S., Kim, H., Lee, J., Park, B., & Kim, Y. (2020) · IEEE Electron Device Letters · doi:10.1109/led.2020.3025587 · Cited by 49 · see citing works
Kwon, D., Lim, S., Bae, J., Lee, S., Kim, H., Seo, Y.-T., Oh, S., Kim, J., Yeom, K., Park, B., et al. (2020) · Frontiers in Neuroscience · doi:10.3389/fnins.2020.00423 · Cited by 47 · see citing works
Zhu, J., Wang, Z., Liu, D., Liu, Q., Wang, W. “., Wang, X., & Zhang, M. (2024) · Advanced Functional Materials · doi:10.1002/adfm.202403842 · Cited by 45 · see citing works
In situ Parallel Training of Analog Neural Network Using Electrochemical Random-Access Memory
Li, Y., Xiao, T. P., Bennett, C. H., Isele, E., Melianas, A., Tao, H., Marinella, M. J., Salleo, A., Fuller, E. J., & Talin, A. A. (2021) · Frontiers in Neuroscience · doi:10.3389/fnins.2021.636127 · Cited by 45 · see citing works
Mazumder, A., Nguyen, C. K., Aung, T., Low, M. X., Rahman, M. A., Russo, S. P., Tawfik, S. A., Wang, S., Bullock, J., Krishnamurthi, V., et al. (2023) · Advanced Functional Materials · doi:10.1002/adfm.202303641 · Cited by 42 · see citing works
Ferroelectric devices and circuits for neuro-inspired computing
Wang, P., & Yu, S. (2020) · MRS Communications · doi:10.1557/mrc.2020.71 · Cited by 42 · see citing works
Self-citationYadav, R. S., Gupta, P., Holla, A., Khan, K. I. A., Muduli, P. K., & Bhowmik, D. (2023) · ACS Applied Electronic Materials · doi:10.1021/acsaelm.2c01488 · Cited by 39 · see citing works
Luo, Y., Han, X., Ye, Z., Barnaby, H., Seo, J.-S., & Yu, S. (2020) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2020.3015940 · Cited by 37 · see citing works
Self-citationAntolini, A., Paolino, C., Zavalloni, F., Lico, A., Scarselli, E. F., Mangia, M., Pareschi, F., Setti, G., Rovatti, R., Torres, M. L., et al. (2023) · IEEE Journal on Emerging and Selected Topics in Circuits and Systems · doi:10.1109/jetcas.2023.3241750 · Cited by 32 · see citing works
Efficient and Robust RRAM-Based Convolutional Weight Mapping With Shifted and Duplicated Kernel
Zhang, Y., He, G., Wang, G., & Li, Y. (2020) · IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems · doi:10.1109/tcad.2020.2998728 · Cited by 35 · see citing works
Cao, T., Liu, C., Wang, W., Zhang, T., Lee, H. K., Li, M. H., Song, W., Chen, Z. X., Zhuo, V. Y.-Q., Wang, N., et al. (2022) · IEEE Journal on Emerging and Selected Topics in Circuits and Systems · doi:10.1109/jetcas.2022.3214334 · Cited by 34 · see citing works
Li-Ion Doped Artificial Synaptic Memristor for Highly Linear Neuromorphic Computing
Meng, J., Li, Z.-H., Fang, Y., Li, Q.-X., He, Z.-Y., Wang, T., Zhu, H., Ji, L., Sun, Q.-Q., Zhang, D., et al. (2022) · IEEE Electron Device Letters · doi:10.1109/led.2022.3211520 · Cited by 18 · see citing works
Peng, X., Kaul, A., Bakir, M. S., & Yu, S. (2021) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2021.3111857 · Cited by 32 · see citing works
Self-citationRealizing In-Memory Baseband Processing for Ultrafast and Energy-Efficient 6G
Zeng, Q., Liu, J., Jiang, M., Lan, J., Gong, Y., Wang, Z., Li, Y., Li, C., Ignowski, J., & Huang, K. (2023) · IEEE Internet of Things Journal · doi:10.1109/jiot.2023.3307405 · Cited by 33 · see citing works
Bhattacharjee, A., Bhatnagar, L., Kim, Y., & Panda, P. (2021) · IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems · doi:10.1109/tcad.2021.3109857 · Cited by 31 · see citing works
Effect of Program Error in Memristive Neural Network With Weight Quantization
Kim, T., Kim, S., Hong, K., Park, J., Youn, S., Lee, J., Park, B., & Kim, H. (2022) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2022.3169112 · Cited by 30 · see citing works
Ferroelectric Field-Effect Transistors for Binary Neural Network With 3-D NAND Architecture
Lee, G. H., Song, M. S., Kim, S., Yim, J., Hwang, S., Yu, J., Kwon, D., & Kim, H. (2022) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2022.3207130 · Cited by 30 · see citing works
Neuromorphic Computing with Emerging Antiferromagnetic Ordering in Spin–Orbit Torque Devices
Ojha, D. K., Huang, Y., Lin, Y.-L., Chatterjee, R., Chang, W.-Y., & Tseng, Y. (2024) · Nano Letters · doi:10.1021/acs.nanolett.4c01712 · Cited by 28 · see citing works
Park, J., Yun, Y., Bae, S., Jang, Y., Shin, S., & Lee, S. (2025) · Advanced Science · doi:10.1002/advs.202500568 · Cited by 28 · see citing works
Cao, T., Liu, C., Gao, Y., & Goh, W. L. (2022) · IEEE Journal on Emerging and Selected Topics in Circuits and Systems · doi:10.1109/jetcas.2022.3172170 · Cited by 27 · see citing works
A Survey of Memory-Centric Energy Efficient Computer Architecture
Zhang, C., Sun, H., Li, S., Wang, Y., Chen, H., & Liu, H. (2023) · IEEE Transactions on Parallel and Distributed Systems · doi:10.1109/tpds.2023.3297595 · Cited by 26 · see citing works
MINT: Mixed-Precision RRAM-Based IN-Memory Training Architecture
Jiang, H., Huang, S., Peng, X., & Yu, S. (2020) · IEEE International Symposium on Circuits and Systems proceedings · doi:10.1109/iscas45731.2020.9181020 · Cited by 26 · see citing works
Self-citationMagnetic skyrmions and domain walls for logical and neuromorphic computing
Hu, X., Cui, C., Liu, S., García‐Sánchez, F., Brigner, W. H., Walker, B. W., Edwards, A. J., Xiao, T. P., Bennett, C. H., Hassan, N., et al. (2023) · Neuromorphic Computing and Engineering · doi:10.1088/2634-4386/acc6e8 · Cited by 25 · see citing works
Pruning of Deep Neural Networks for Fault-Tolerant Memristor-based Accelerators
Chen, C.-Y., & Chakrabarty, K. (2021) · ACM/IEEE Design Automation Conference (DAC) · doi:10.1109/dac18074.2021.9586269 · Cited by 24 · see citing works
Wang, P., Wang, Z., Sun, X., Hur, J. H., Datta, S., Khan, A. I., & Yu, S. (2020) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2020.3009956 · Cited by 24 · see citing works
Self-citationModeling and simulating in-memory memristive deep learning systems: An overview of current efforts
Lammie, C., Xiang, W., & Azghadi, M. R. (2021) · Array · doi:10.1016/j.array.2021.100116 · Cited by 23 · see citing works
Investigation of Low-Frequency Noise Characteristics in Gated Schottky Diodes
Kwon, D., Shin, W., Bae, J., Lim, S., Park, B., & Lee, J. (2021) · IEEE Electron Device Letters · doi:10.1109/led.2021.3051197 · Cited by 22 · see citing works
Robust RRAM-based In-Memory Computing in Light of Model Stability
Krishnan, G., V, Sun, J., Hazra, J., Du, X., Liehr, M., Li, Z., Beckmann, K., Joshi, R., Cady, N. C., & Cao, Y. K. (2021) · IEEE International Reliability Physics Symposium proceedings · doi:10.1109/irps46558.2021.9405092 · Cited by 22 · see citing works
Wang, Y., Yu, L., Wu, S., Huang, R., & Yang, Y. (2020) · Advanced Intelligent Systems · doi:10.1002/aisy.202000001 · Cited by 20 · see citing works
Park, S., Seong, S., Jeon, G., Ji, W., Noh, K., Kim, S., & Chung, Y. (2022) · Advanced Electronic Materials · doi:10.1002/aelm.202200554 · Cited by 20 · see citing works
Framework for In-Memory Computing Based on Memristor and Memcapacitor for On-Chip Training
Singh, A., & Lee, B.-G. (2023) · IEEE Access · doi:10.1109/access.2023.3324375 · Cited by 19 · see citing works
“These include variations in conductance, capacitance, device-to-device (D2D), and cycle-to-cycle (C2C), as well as nonlinearity and programming failure [28].”
BackgroundThreshold learning algorithm for memristive neural network with binary switching behavior
Youn, S., Hwang, Y., Kim, T., Kim, S., Hwang, H., Park, J., & Kim, H. (2024) · Neural Networks · doi:10.1016/j.neunet.2024.106355 · Cited by 19 · see citing works
Nam, S., Kang, D., Jeon, S., Nam, D., Jo, J., Park, S., Lee, J., Kim, M., Ha, T., Park, S. K., et al. (2025) · Small · doi:10.1002/smll.202409510 · Cited by 18 · see citing works
Electrical Analysis of Atomic Layer Deposited Thin HfO2 and HfO2/Ta2O5-Based Memristive Devices
Kumar, S., Yadav, D., Ramesh, R., Stathopoulos, S., Tsiamis, A., & Prodromakis, T. (2025) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2025.3539256 · Cited by 18 · see citing works
Empirical metal-oxide RRAM device endurance and retention model for deep learning simulations
Lammie, C., Azghadi, M. R., & Ielmini, D. (2021) · Semiconductor Science and Technology · doi:10.1088/1361-6641/abf29d · Cited by 18 · see citing works
Hf0.5Zr0.5O2-Based Ferroelectric Tunnel Junction as an Artificial Synapse for Speech Recognition
Lu, Y. H., Guan, Z., Xu, B., Shen, S., Yin, Y., & Li, X. (2025) · ACS Applied Materials & Interfaces · doi:10.1021/acsami.5c01547 · Cited by 17 · see citing works
Efficient Processing of MLPerf Mobile Workloads Using Digital Compute-In-Memory Macros
Sun, X., Cao, W., Crafton, B., Akarvardar, K., Mori, H., Fujiwara, H., Noguchi, H., Chih, Y.-D., Chang, M., Wang, Y., et al. (2023) · IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems · doi:10.1109/tcad.2023.3333290 · Cited by 17 · see citing works
Self-citationFan, X., Chen, A., Li, Z., Gong, Z., Wang, Z., Zhang, G., Li, P., Xu, Y., Wang, H., Wang, C., et al. (2024) · Advanced Materials · doi:10.1002/adma.202411237 · Cited by 16 · see citing works
Fu, Y., Dong, B., Su, W.-C., Lin, C., Zhou, K., Chang, T., Zhuge, F., Li, Y., He, Y., Gao, B., et al. (2020) · Nanoscale · doi:10.1039/d0nr04782a · Cited by 16 · see citing works
All-Spin Artificial Neural Network Based on Spin–Orbit Torque-Induced Magnetization Switching
Cao, Z. Z., Zhang, S., Hou, J., Duan, W., & You, L. (2023) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2023.3327031 · Cited by 15 · see citing works
Huang, P., Liu, X., Xin, Y., Gu, Y., Lee, A., Zhang, Y., Xu, Z., Chen, P., Zhang, Y. L., Deng, W., et al. (2024) · ACS Nano · doi:10.1021/acsnano.4c03278 · Cited by 14 · see citing works
Moitra, A., Bhattacharjee, A., Li, Y., Kim, Y., & Panda, P. (2024) · Applied Physics Reviews · doi:10.1063/5.0211040 · Cited by 13 · see citing works
Overcoming Challenges for Achieving High in-situ Training Accuracy with Emerging Memories
Huang, S., Sun, X., Peng, X., Jiang, H., & Yu, S. (2020) · Design, Automation, and Test in Europe · doi:10.23919/date48585.2020.9116215 · Cited by 13 · see citing works
Self-citationOn-line Functional Testing of Memristor-mapped Deep Neural Networks using Backdoored Checksums
Chen, C.-Y., & Chakrabarty, K. (2021) · IEEE International Test Conference (ITC) · doi:10.1109/itc50571.2021.00016 · Cited by 13 · see citing works
Rhe, J., Moon, S., & Ko, J. H. (2022) · IEEE Journal on Emerging and Selected Topics in Circuits and Systems · doi:10.1109/jetcas.2022.3173649 · Cited by 13 · see citing works
Ansari, M. H. R., Li, H., & El‐Atab, N. (2023) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2023.3234018 · Cited by 13 · see citing works
Characterization and Mitigation of IR-Drop in RRAM-based Compute In-Memory
Crafton, B., Talley, C., Spetalnick, S. D., Yoon, J., & Raychowdhury, A. (2022) · IEEE International Symposium on Circuits and Systems proceedings · doi:10.1109/iscas48785.2022.9937307 · Cited by 12 · see citing works
Graphene-Based Artificial Dendrites for Bio-Inspired Learning in Spiking Neuromorphic Systems
Liu, S., Akinwande, D., Kireev, D., & Incorvia, J. A. C. (2024) · Nano Letters · doi:10.1021/acs.nanolett.4c00739 · Cited by 12 · see citing works
Cao, T., Yu, W., Gao, Y., Liu, C., Zhang, T., Yan, S., & Goh, W. L. (2024) · IEEE Transactions on Very Large Scale Integration (VLSI) Systems · doi:10.1109/tvlsi.2024.3472270 · Cited by 12 · see citing works
Temporal State Machines: Using Temporal Memory to Stitch Time-based Graph Computations
Madhavan, A., Daniels, M. W., & Stiles, M. D. (2021) · ACM Journal on Emerging Technologies in Computing Systems · doi:10.1145/3451214 · Cited by 12 · see citing works
Efficient Identification of Critical Faults in Memristor-Based Inferencing Accelerators
Chen, C.-Y., & Chakrabarty, K. (2021) · IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems · doi:10.1109/tcad.2021.3102894 · Cited by 12 · see citing works
Two-dimensional materials for artificial synapses: toward a practical application
Wang, I., Chang, C.-C., Chen, Y., Su, Y.-S., & Hou, T. (2022) · Neuromorphic Computing and Engineering · doi:10.1088/2634-4386/ac5086 · Cited by 12 · see citing works
Zhang, Y., Huang, P. C., Cai, L., Feng, Y., Liu, L., Liu, X., & Kang, J. (2022) · IEEE Electron Device Letters · doi:10.1109/led.2022.3182494 · Cited by 12 · see citing works
Bhattacharjee, A., Moitra, A., & Panda, P. (2023) · IEEE Journal on Emerging and Selected Topics in Circuits and Systems · doi:10.1109/jetcas.2023.3327748 · Cited by 12 · see citing works
Kim, J., Shin, W., Yim, J., Kwon, D., Kwon, D., & Lee, J. (2024) · Advanced Intelligent Systems · doi:10.1002/aisy.202300763 · Cited by 12 · see citing works
Bhattacharjee, A., Moitra, A., Kim, Y., Venkatesha, Y., & Panda, P. (2023) · ACM Great Lakes Symposium on VLSI (GLSVLSI) · doi:10.1145/3583781.3590241 · Cited by 11 · see citing works
Cao, T., Yu, W., Gao, Y., Liu, C., Yan, S., & Goh, W. L. (2023) · IEEE International Symposium on Circuits and Systems proceedings · doi:10.1109/iscas46773.2023.10181612 · Cited by 11 · see citing works
Are SNNs Truly Energy-efficient? — A Hardware Perspective
Bhattacharjee, A., Yin, R., Moitra, A., & Panda, P. (2024) · IEEE International Conference on Acoustics Speech and Signal Processing · doi:10.1109/icassp48485.2024.10448269 · Cited by 11 · see citing works
Efficient Identification of Critical Faults in Memristor Crossbars for Deep Neural Networks
Chen, C.-Y., & Chakrabarty, K. (2021) · Design, Automation, and Test in Europe · doi:10.23919/date51398.2021.9473989 · Cited by 11 · see citing works
Park, K., Chung, C., Ku, B., Yun, S., Park, J., & Choi, C. (2025) · Nanoscale · doi:10.1039/d4nr04592k · Cited by 10 · see citing works
D-NAT: Data-Driven Non-Ideality Aware Training Framework for Fabricated Computing-In-Memory Macros
Lin, M.-G., Huang, C.-T., Chuang, Y.-C., Chen, Y.-T., Hsu, Y., Chen, Y., Chou, J., Liu, T.-T., Shih, C., & Wu, A.-Y. A. (2022) · IEEE Journal on Emerging and Selected Topics in Circuits and Systems · doi:10.1109/jetcas.2022.3171268 · Cited by 10 · see citing works
Guo, M. L., Zhang, X., Dou, G., & Iu, H. H. (2025) · IEEE Transactions on Circuits and Systems I Regular Papers · doi:10.1109/tcsi.2025.3561803 · Cited by 9 · see citing works
Yan, J., Song, H.-J., Zhong, X., Wang, J.-B., Guo, H.-X., & Ouyang, X.-P. (2023) · IEEE Transactions on Nuclear Science · doi:10.1109/tns.2023.3267606 · Cited by 4 · see citing works
Luo, Y., & Yu, S.-M. (2020) · Asia and South Pacific Design Automation Conference · doi:10.1109/asp-dac47756.2020.9045288 · Cited by 9 · see citing works
Self-citationBidirectional Analog Conductance Modulation for RRAM-Based Neural Networks
Jiang, Z., Wang, Z., Zheng, X., Fong, S. W., Qin, S., Chen, H.-Y., Ahn, C., Cao, J., Nishi, Y., Wong, S. S., et al. (2020) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2020.3025849 · Cited by 8 · see citing works
High Performance DUV Synaptic Oxide Thin Film Transistor with Rapid Response
Lin, D., Luo, D., Yeung, F. S. Y., Kwok, H. S., & Chen, R. (2024) · IEEE Electron Device Letters · doi:10.1109/led.2024.3441608 · Cited by 7 · see citing works
Synaptic Transistors Using Scalable Graphene Nanoribbons
Sun, M., Xu, Z., Qu, S., Liu, L., Zhu, Q., & Xu, W. (2024) · The Journal of Physical Chemistry Letters · doi:10.1021/acs.jpclett.4c02149 · Cited by 7 · see citing works
Hsin, T., Lin, C., Wang, P., Yang, C., & Pai, C. (2025) · Advanced Science · doi:10.1002/advs.202417735 · Cited by 8 · see citing works
Organic Electrochemical Random Access Memory: From Bio‐Inspired to Bio‐Integrated
Wang, S., Wang, B., Teng, X., Zhao, W., Cao, J., & Ma, W. (2025) · Advanced Materials · doi:10.1002/adma.202515843 · Cited by 8 · see citing works
Park, J., Jang, Y., & Lee, S. (2023) · AIP Advances · doi:10.1063/5.0168258 · Cited by 7 · see citing works
Utilizing Dual-Port FeFETs for Energy-Efficient Binary Neural Network Inference Accelerators
Rafiq, M., Chatterjee, S., Kumar, S., Chauhan, Y. S., & Sahay, S. (2024) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2024.3405472 · Cited by 7 · see citing works
ClipFormer : Key–Value Clipping of Transformers on Memristive Crossbars for Write Noise Mitigation
Bhattacharjee, A., Moitra, A., & Panda, P. (2024) · IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems · doi:10.1109/tcad.2024.3435762 · Cited by 7 · see citing works
Design Exploration of ReRAM-Based Crossbar for AI Inference
Halawani, Y., Mohammad, B. S., & Saleh, H. H. (2021) · IEEE Access · doi:10.1109/access.2021.3076445 · Cited by 7 · see citing works
Shape-Dependent Multi-Weight Magnetic Artificial Synapses for Neuromorphic ComputingPreprint
Leonard, T., Liu, S., Alamdar, M., Cui, C., Akinola, O. G., Xue, L., Xiao, T. P., Friedman, J. S., Marinella, M. J., Bennett, C. H., et al. (2022) · Research Square · doi:10.21203/rs.3.rs-1104630/v1 · Cited by 7 · see citing works
Gonugondla, S. K., Patil, A. D., & Shanbhag, N. R. (2020) · IEEE/ACM ICCAD · doi:10.1145/3400302.3415642 · Cited by 6 · see citing works
Field-free spin–orbit torque devices for logic and neural network applications
Lin, C.-Y., Hsieh, J.-Y., Wang, P.-C., Tsai, C.-C., & Pai, C. (2024) · APL Machine Learning · doi:10.1063/5.0226135 · Cited by 6 · see citing works
Han, L.-X., Huang, P., Wang, Y.-J., Zhou, Z., Yang, H., Chen, Y.-Y., Liu, X.-Y., & Kang, J.-F. (2025) · Science China Information Sciences · doi:10.1007/s11432-023-4021-y · Cited by 7 · see citing works
- Authors
- Sun, X., & Yu, S.
- Affiliations
- Georgia Institute of Technology (US)
- Venue
- IEEE Journal on Emerging and Selected Topics in Circuits and Systems
- Published
- 2019-09
- Volume
- 9
- Issue
- 3
- Pages
- 570-579
- ISSN
- 2156-3357 (ISSN-L)
- 2156-3365
- OpenAlex
- W2966199719
- Cited by
- 170
- References
- 40
- Citations by year
- 2026: 9 · 2025: 25 · 2024: 34 · 2023: 31 · 2022: 25 · 2021: 22 · 2020: 22 · 2019: 2
- FWCI
- 6.38
- Type
- journal article
- Language
- en
- Open access
- closed
- Licence
- Locations
- IEEE Journal on Emerging and Selected Topics in Circuits and Systems (publishedVersion)
- Funders
- National Science Foundation (CCF-1903951)
- Defense Advanced Research Projects Agency
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Advanced Memory and Neural Computing
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Ferroelectric and Negative Capacitance Devices
- Physical Sciences › Computer Science › Computer Vision and Pattern Recognition › Advanced Neural Network Applications
- Keywords
- non-volatile memory, convolutional neural networks, device-to-device variation, cycle-to-cycle variation, endurance, retention, conductance drift, training accuracy, inference accuracy
About these checks
Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.
Statistics and arithmetic are recomputed, not judged.
Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.
What counts as a claim ›How we measure confidence ›How we check this ›
Are you an author, or do you see a problem with this page? Request a review