Cited by 170Advanced Memory and Neural ComputingFerroelectric and Negative Capacitance DevicesAdvanced Neural Network Applications

Impact of Non-Ideal Characteristics of Resistive Synaptic Devices on Implementing Convolutional Neural Networks

Sun, Xiaoyu, Yu, Shimeng·2019·IEEE Journal on Emerging and Selected Topics in Circuits and Systems

Abstract

Emerging non-volatile memory (eNVM) based resistive synaptic devices have shown great potential for implementing deep neural networks (DNNs). However, the eNVM devices typically suffer from various non-ideal effects which may degrade the performance of the system. Based on a representative convolutional neural network (CNN) model for CIFAR-10 dataset, this paper comprehensively investigates the impact of those nonideal characteristics, such as nonlinearity and asymmetry of conductance tuning, variations, endurance and retention, on the training/inference accuracy. The compact models of the device non-ideal effects are incorporated into the TensorFlow framework. Our simulation results suggest that 1) the training accuracy is more sensitive to the asymmetry of conductance tuning than the nonlinearity; 2) the conductance range variation does not degrade the training accuracy, instead, a small variation can even reduce the accuracy loss introduced by asymmetry; 3) device-to-device variation can also remedy the accuracy loss due to asymmetry while cycle-to-cycle variation leads to significant accuracy degradation; 4) the accuracy degradation will not be noticeable if the endurance cycles are more than 7,000 cycles; and 5) different drifting modes affect the inference accuracy differently, and the best case is where the conductance is drifting up/down randomly.

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Crossref · 10.1109/jetcas.2019.2933148

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  • Due to fabrication imperfections, non-ideal behaviors are observed in memristor and memcapacitor devices, including variations in conductance, capacitance, device-to-device, cycle-to-cycle, nonlinearity, and programming failure.

    “Due to fabrication imperfections, non-ideal behaviors are observed in memristor and memcapacitor devices. These include variations in conductance, capacitance, device-todevice (D2D), and cycle-to-cycle (C2C), as well as nonlinearity and programming failure [28].”

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Authors
Sun, X., & Yu, S.
Affiliations
Georgia Institute of Technology (US)
Venue
IEEE Journal on Emerging and Selected Topics in Circuits and Systems
Published
2019-09
Volume
9
Issue
3
Pages
570-579
ISSN
  • 2156-3357 (ISSN-L)
  • 2156-3365
OpenAlex
W2966199719
Cited by
170
References
40
Citations by year
2026: 9 · 2025: 25 · 2024: 34 · 2023: 31 · 2022: 25 · 2021: 22 · 2020: 22 · 2019: 2
FWCI
6.38
Type
journal article
Language
en
Open access
closed
Locations
IEEE Journal on Emerging and Selected Topics in Circuits and Systems (publishedVersion)
Funders
  • National Science Foundation (CCF-1903951)
  • Defense Advanced Research Projects Agency
Topics
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Advanced Memory and Neural Computing
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Ferroelectric and Negative Capacitance Devices
  • Physical Sciences › Computer Science › Computer Vision and Pattern Recognition › Advanced Neural Network Applications
Keywords
non-volatile memory, convolutional neural networks, device-to-device variation, cycle-to-cycle variation, endurance, retention, conductance drift, training accuracy, inference accuracy

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