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Condition Monitoring for Device Reliability in Power Electronic Converters: A Review
Open accessAbstract
Condition monitoring (CM) has already been proven to be a cost effective means of enhancing reliability and improving customer service in power equipment, such as transformers and rotating electrical machinery. CM for power semiconductor devices in power electronic converters is at a more embryonic stage; however, as progress is made in understanding semiconductor device failure modes, appropriate sensor technologies, and signal processing techniques, this situation will rapidly improve. This technical review is carried out with the aim of describing the current state of the art in CM research for power electronics. Reliability models for power electronics, including dominant failure mechanisms of devices are described first. This is followed by a description of recently proposed CM techniques. The benefits and limitations of these techniques are then discussed. It is intended that this review will provide the basis for future developments in power electronics CM.
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“According to [238], [239], power semiconductor device damages account for approximately 35% of all ASD faults.”
From Fault Diagnosis and Fault-Tolerant Control of PMSM Drives–State of the Art and Future Challenges (2022) · cites this paper as [238]
Citations
Cites
Physics of Semiconductor Devices
Sze, S. M., & Ng, K. K. (2006) · doi:10.1002/0470068329 · Cited by 14,627
Physics of Semiconductor Devices
Colinge, J.-P., & Colinge, C. (2002) · Kluwer Academic Publishers eBooks · doi:10.1007/b117561 · Cited by 14,074
A Critical Analysis of Crack Propagation Laws
Paris, P. C., & Erdoğan, F. (1963) · Journal of Basic Engineering · doi:10.1115/1.3656900 · Cited by 7,168
Power electronics converters, applications and design
Robinson, F. V. P. (1997) · Microelectronics Journal · doi:10.1016/s0026-2692(97)87859-7 · Cited by 5,100
Power Electronics: Converters, Applications and Design
Mohan, N., Undeland, T. M., & Robbins, W. P. (1989) · Cited by 4,781
Fundamentals of Power Semiconductor Devices
Baliga, B. J. (2008) · Springer eBooks · doi:10.1007/978-0-387-47314-7 · Cited by 2,241
An Industry-Based Survey of Reliability in Power Electronic Converters
Yang, S., Bryant, A. T., Mawby, P., Xiang, D., Ran, L., & Tavner, P. J. (2011) · IEEE Transactions on Industry Applications · doi:10.1109/tia.2011.2124436 · Cited by 2,058
Self-citationSelected failure mechanisms of modern power modules
Ciappa, M. (2002) · Microelectronics Reliability · doi:10.1016/s0026-2714(02)00042-2 · Cited by 1,039
Power Electronics: Converters, Applications, and Design
Mohan (2007) · Cited by 1,022
(2002) · Elsevier eBooks · doi:10.1016/c2016-0-00847-1 · Cited by 940
Fast power cycling test of IGBT modules in traction application
Held, M., Jacob, P., Nicoletti, G. J., Scacco, P., & Poech, M. (2002) · IEEE International Conference on Power Electronics and Drive Systems (PEDS) · doi:10.1109/peds.1997.618742 · Cited by 587
The Power Electronics Handbook
(2010) · CRC Press eBooks · doi:10.1201/9781420037067 · Cited by 535
Condition monitoring techniques for electrical equipment-a literature survey
Han, Y., & Song, Y. (2003) · IEEE Transactions on Power Delivery · doi:10.1109/tpwrd.2002.801425 · Cited by 380
(1991) · Springer eBooks · doi:10.1007/978-1-4615-3910-0 · Cited by 309
Reliability and Failure of Electronic Materials and Devices
Ohring, M., & Kasprzak, L. (2015) · Elsevier eBooks · doi:10.1016/c2009-0-05748-1 · Cited by 295
Fuchs, F. W. (2004) · Proceedings of the Annual Conference of the IEEE Industrial Electronics Society · doi:10.1109/iecon.2003.1280259 · Cited by 269
Ran, L., Gokani, S., Clare, J., Bradley, K. J., & Christopoulos, C. (1998) · IEEE Transactions on Power Electronics · doi:10.1109/63.704152 · Cited by 267
Self-citationSolder Joint Reliability—Theory and Applications
Lau, J. H.-S., & Engel, P. A. (1992) · Journal of Electronic Packaging · doi:10.1115/1.2905434 · Cited by 261
Conducted electromagnetic emissions in induction motor drive systems. II. Frequency domain models
Ran, L., Gokani, S., Clare, J., Bradley, K. J., & Christopoulos, C. (1998) · IEEE Transactions on Power Electronics · doi:10.1109/63.704154 · Cited by 234
Self-citationXiong, Y., Cheng, X., Shen, Z. J., Mi, C. C., Wu, H., & Garg, V. K. (2008) · IEEE Transactions on Industrial Electronics · doi:10.1109/tie.2008.918399 · Cited by 226
Reliability and Failure of Electronic Materials and Devices
(1998) · Elsevier eBooks · doi:10.1016/b978-0-12-524985-0.x5000-4 · Cited by 176
Electronic circuit reliability modeling
Bernstein, J. B., Gurfinkel, M., Li, X., Walters, J., Shapira, Y., & Talmor, M. (2006) · Microelectronics Reliability · doi:10.1016/j.microrel.2005.12.004 · Cited by 172
Failure modes and FEM analysis of power electronic packaging
Ye, H., Lin, M., & Basaran, C. (2002) · Finite Elements in Analysis and Design · doi:10.1016/s0168-874x(01)00094-4 · Cited by 167
Failure mechanisms in semiconductor devices
D.J.S. (1988) · Microelectronics Reliability · doi:10.1016/0026-2714(88)90367-8 · Cited by 164
Prognosis of faults in gas turbine engines
Brotherton, T., Jahns, G. L., Jacobs, J., & Wróblewski, D. (2002) · IEEE Aerospace Conference (AERO) · doi:10.1109/aero.2000.877892 · Cited by 163
Circuit simulator models for the diode and IGBT with full temperature dependent features
Palmer, P., Santi, E., Hudgins, J. L., Kang, X., Joyce, J. C., & Eng, P. (2003) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2003.816194 · Cited by 163
Failure Mechanisms in Semiconductor Devices
Amerasekera, E. A., & Campbell, D. (1987) · Medical Entomology and Zoology · Cited by 156
Void-induced thermal impedance in power semiconductor modules: Some transient temperature effects
Katsis, D. C., & van Wyk, J. D. (2003) · IEEE Transactions on Industry Applications · doi:10.1109/tia.2003.816527 · Cited by 156
Thermal component model for electrothermal analysis of IGBT module systems
Yun, C.-S., Malberti, P., Ciappa, M., & Fichtner, W. (2001) · IEEE Transactions on Advanced Packaging · doi:10.1109/6040.938309 · Cited by 153
Ciappa, M., Carbognani, F., & Fïchtner, W. (2003) · IEEE Transactions on Device and Materials Reliability · doi:10.1109/tdmr.2003.818148 · Cited by 149
Extraction of parasitics within wire-bond IGBT modules
Xing, K., Lee, F. C., & Boroyevich, D. (2002) · IEEE Applied Power Electronics Conference and Exposition (APEC) · doi:10.1109/apec.1998.647735 · Cited by 142
Bryant, A. T., Mawby, P., Palmer, P., Santi, E., & Hudgins, J. L. (2008) · IEEE Transactions on Industry Applications · doi:10.1109/tia.2008.921388 · Cited by 139
Self-citationChen, X., Chen, G., & Sakane, M. (2005) · IEEE Transactions on Components and Packaging Technologies · doi:10.1109/tcapt.2004.843157 · Cited by 119
Lifetime prediction of IGBT modules for traction applications
Ciappa, M., & Fïchtner, W. (2002) · IEEE International Reliability Physics Symposium proceedings · doi:10.1109/relphy.2000.843917 · Cited by 108
A New Fault Detection Technique for IGBT Based on Gate Voltage Monitoring
Rodriguez, M. A., Claudio, A., Theilliol, D., & Vela, L. G. (2007) · IEEE Power Electronics Specialists Conference (PESC) · doi:10.1109/pesc.2007.4342127 · Cited by 107
Perpiñà, X., Servière, J. F., Saiz, J., Barlini, D., Mermet-Guyennet, M., & Millán, J. (2006) · Microelectronics Reliability · doi:10.1016/j.microrel.2006.07.078 · Cited by 104
Combination of thermal subsystems modeled by rapid circuit transformation
Gerstenmaier, Y. C., Kiffe, W., & Wachutka, G. (2007) · doi:10.1109/therminic.2007.4451758 · Cited by 103
Real-Time Condition Monitoring of the Electrolytic Capacitors for Power Electronics Applications
Imam, A. M., Divan, D. M., Harley, R. G., & Habetler, T. G. (2007) · Conference proceedings/Conference proceedings - IEEE Applied Power Electronics Conference and Exposition · doi:10.1109/apex.2007.357646 · Cited by 100
First observations of power MOSFET burnout with high energy neutrons
Oberg, D. L., Wert, J. L., Normand, E., Majewski, P., & Wender, S. A. (1996) · IEEE Transactions on Nuclear Science · doi:10.1109/23.556885 · Cited by 100
Reliability of thick Al wire bonds in IGBT modules for traction motor drives
Onuki, J., Koizumi, M., & Suwa, M. (2000) · IEEE Transactions on Advanced Packaging · doi:10.1109/6040.826768 · Cited by 95
Barlini, D., Ciappa, M., Castellazzi, A., Mermet-Guyennet, M., & Fichtner, W. (2006) · Microelectronics Reliability · doi:10.1016/j.microrel.2006.07.058 · Cited by 92
Reliability of high temperature solder alternatives
McCluskey, F. P., Dash, M., Wang, Z., & Huff, D. N. (2006) · Microelectronics Reliability · doi:10.1016/j.microrel.2006.07.090 · Cited by 91
On the Operation of a Press Pack IGBT Module Under Short Circuit Conditions
Gunturi, S. K., & Schneider, D. (2006) · IEEE Transactions on Advanced Packaging · doi:10.1109/tadvp.2006.875090 · Cited by 89
Condition Monitoring of Power Electronic Circuits Using Artificial Neural Networks
Mohagheghi, S., Harley, R. G., Habetler, T. G., & Divan, D. M. (2009) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2009.2017806 · Cited by 87
On the effect of power cycling stress on IGBT modules
Cova, P., & Fantini, F. (1998) · Microelectronics Reliability · doi:10.1016/s0026-2714(98)00081-x · Cited by 85
Identification of failure precursor parameters for Insulated Gate Bipolar Transistors (IGBTs)
Patil, N., Das, D., Goebel, K., & PECHT, M. G. (2008) · International Conference on Prognostics and Health Management (PHM) · doi:10.1109/phm.2008.4711417 · Cited by 85
Power cycling with high temperature swing of discrete components based on different technologies
Amro, R., Lutz, J., & Lindemann, A. (2004) · PESC record · doi:10.1109/pesc.2004.1355239 · Cited by 85
Failure mechanisms of IGBTs under short-circuit and clamped inductive switching stress
Trivedi, M., & Shenai, K. (1999) · IEEE Transactions on Power Electronics · doi:10.1109/63.737598 · Cited by 81
An experimental and numerical study on the forward biased SOA of IGBTs
Hagino, H., Yamashita, J., Uenishi, A., & Haruguchi, H. (1996) · IEEE Transactions on Electron Devices · doi:10.1109/16.485667 · Cited by 80
Investigation on the long term reliability of power IGBT modules
Wu, W., Held, M., Jacob, P., Scacco, P., & Birolini, A. (2002) · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · doi:10.1109/ispsd.1995.515079 · Cited by 76
4.5kV press pack IGBT designed for ruggedness and reliability
Eicher, S., Rahimo, M. T. A., Tsyplakov, E., Schneider, D., Kopta, A., Schlapbach, U., & Carroll, E. (2004) · IEEE Industry Applications Society Annual Meeting (IAS) · doi:10.1109/ias.2004.1348674 · Cited by 73
Thebaud, J.-M., Woirgard, E., Zardini, C., Azzopardi, S., Briat, O., & Vinassa, J.-M. (2003) · IEEE Transactions on Components and Packaging Technologies · doi:10.1109/tcapt.2003.815112 · Cited by 73
Advanced IGBT modules for railway traction applications: Reliability testing
Berg, H., & Wolfgang, E. (1998) · Microelectronics Reliability · doi:10.1016/s0026-2714(98)00150-4 · Cited by 71
Reliability testing and analysis of IGBT power semiconductor modules
Jacob, P. (1995) · doi:10.1049/ic:19950531 · Cited by 70
Measurement of the transient junction temperature in MOSFET devices under operating conditions
Barlini, D., Ciappa, M., Mermet-Guyennet, M., & Fichtner, W. (2007) · Microelectronics Reliability · doi:10.1016/j.microrel.2007.07.008 · Cited by 64
Ciappa, M., Fichtner, W., Kojima, T., Yamada, Y., & Nishibe, Y. (2005) · Microelectronics Reliability · doi:10.1016/j.microrel.2005.07.083 · Cited by 64
Ciappa, M., Carbognani, F., Cova, P., & Fichtner, W. (2002) · Microelectronics Reliability · doi:10.1016/s0026-2714(02)00206-8 · Cited by 59
Lifetime prediction on the base of mission profiles
Ciappa, M. (2005) · Microelectronics Reliability · doi:10.1016/j.microrel.2005.07.060 · Cited by 58
Ratchev, P., Vandevelde, B., & DeWolf, I. (2004) · IEEE Transactions on Device and Materials Reliability · doi:10.1109/tdmr.2003.822341 · Cited by 58
Online Health Monitoring in Digitally Controlled Power Converters
Morroni, J., Dolgov, A. B., Shirazi, M., Zane, R. A., & Maksimović, D. (2007) · IEEE Power Electronics Specialists Conference (PESC) · doi:10.1109/pesc.2007.4341972 · Cited by 55
Method for electrical detection of bond wire lift-off for power semiconductors
Lehmann, J., Netzel, M., Herzer, R., & Pawel, S. (2004) · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · doi:10.1109/ispsd.2003.1225295 · Cited by 55
A thermal, mechanical, and electrical study of voiding in the solder die-attach of power MOSFETs
Katsis, D. C., & vanWyk, J. D. (2006) · IEEE Transactions on Components and Packaging Technologies · doi:10.1109/tcapt.2005.853301 · Cited by 53
Device integration for ESD robustness of high voltage power MOSFETs
Duvvury, C., Rodriguez, J., Jones, C., & Smayling, M. C. (2002) · Technical digest - International Electron Devices Meeting/Technical digest · doi:10.1109/iedm.1994.383381 · Cited by 53
Kojima, Yamada, Ciappa, Chiavarini, & Fichtner (2004) · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · doi:10.1109/wct.2004.239990 · Cited by 52
Energy based methodology for damage and life prediction of solder joints under thermal cycling
Sarihan, V. (1994) · IEEE Transactions on Components Packaging and Manufacturing Technology Part B · doi:10.1109/96.338733 · Cited by 51
Experimental investigations of trench field stop IGBT under repetitive short-circuits operations
Arab, M., Lefebvre, S., Khatir, Z., & Bontemps, S. (2008) · IEEE Power Electronics Specialists Conference (PESC) · doi:10.1109/pesc.2008.4592645 · Cited by 49
Coquery, G., & Lallemand, R. (2000) · Microelectronics Reliability · doi:10.1016/s0026-2714(00)00191-8 · Cited by 46
Thermal and Structural Simulation Techniques for Estimating Fatigue Life of an IGBT Module
Sasaki, K., Iwasa, N., Kurosu, T., Saito, K., Koike, Y., Kamita, Y., & Toyoda, Y. (2008) · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · doi:10.1109/ispsd.2008.4538928 · Cited by 45
Palmer, P., Bryant, A. T., Hudgins, J. L., & Santi, E. (2003) · IEEE Industry Applications Society Annual Meeting (IAS) · doi:10.1109/ias.2002.1042787 · Cited by 40
Self-citation3-Level high power converter with press pack IGBT
Jakob, R., Keller, C., Möhlenkamp, G., & Gollentz, B. (2007) · European Conference on Power Electronics and Applications · doi:10.1109/epe.2007.4417648 · Cited by 38
A Physics-of-failure based Prognostic Method for Power Modules
Yin, C., Lu, H., Musallam, M., Bailey, C., & Johnson, C. M. (2008) · IEEE Electronics Packaging Technology Conference (EPTC) · doi:10.1109/eptc.2008.4763591 · Cited by 36
Revisiting power cycling test for better life-time prediction in traction
Mermet-Guyennet, M., Perpiñà, X., & Piton, M. (2007) · Microelectronics Reliability · doi:10.1016/j.microrel.2007.07.099 · Cited by 36
Evaluation of Power Semiconductors Power Cycling Capabilities for Adjustable Speed Drive
Wei, L., Kerkman, R. J., & Lukaszewski, R. A. (2008) · Conference record · doi:10.1109/08ias.2008.362 · Cited by 35
Glavanovics, M., Detzel, T., & Weber, K. (2004) · Proceedings of ESSCIRC · doi:10.1109/essder.2004.1356542 · Cited by 34
Reliability of High-Power IGBT Modules for Traction Applications
Ciappa, M., & Castellazzi, A. (2007) · IEEE International Reliability Physics Symposium proceedings · doi:10.1109/relphy.2007.369938 · Cited by 34
Mapping of Single Event Burnout in Power MOSFETs
Haran, A., Barak, J., David, D., Refaeli, N., Fischer, B. E., Voss, K., Du, G., & Heiss, M. (2007) · IEEE Transactions on Nuclear Science · doi:10.1109/tns.2007.910851 · Cited by 32
Reliability testing of high-power multi-chip IGBT modules
Lefranc, G., Licht, T., Schultz, H.-J., Beinert, R., & Mitić, G. (2000) · Microelectronics Reliability · doi:10.1016/s0026-2714(00)00185-2 · Cited by 30
A Prognostic Sensor for Voltage Regulated Switch-Mode Power Supplies
Judkins, J. B., Hofmeister, J. P., & Vohnout, S. (2007) · Proceedings - IEEE Aerospace Conference · doi:10.1109/aero.2007.352885 · Cited by 28
Ciprian, R. D. R., & Lehman, B. (2009) · IEEE Energy Conversion Congress and Exposition (ECCE) · doi:10.1109/ecce.2009.5316423 · Cited by 28
Failure precursors for insulated gate bipolar transistors (IGBTs)
Patil, N., Das, D., Goebel, K., & PECHT, M. G. (2008) · International Seminar on Power Semiconductors (ISPS) · doi:10.1049/ic:20080222 · Cited by 27
A prognostic assessment method for power electronics modules
Yin, C., Lu, H., Musallam, M., Bailey, C., & Johnson, C. M. (2008) · Electronic System-Integration Technology Conference (ESTC) · doi:10.1109/estc.2008.4684552 · Cited by 27
Thermal characterization of IGBT power modules
Cova, P., Ciappa, M., Franceschini, G., Malberti, P., & Fantini, F. (1997) · Microelectronics Reliability · doi:10.1016/s0026-2714(97)00150-9 · Cited by 26
IGBT-Modules: Design for reliability
Lutz, J. (2009) · European Conference on Power Electronics and Applications · Cited by 26
The Use of Condition Maps in the Design and Testing of Power Electronic Circuits and Devices
Bryant, A. T., Parker-Allotey, N.-A., & Palmer, P. (2007) · IEEE Transactions on Industry Applications · doi:10.1109/tia.2007.900470 · Cited by 26
Self-citationMeasurement and modelling of power electronic devices at cryogenic temperatures
Forsyth, A. J., Yang, S. Y., Mawby, P., & Igić, P. (2006) · IEE Proceedings - Circuits Devices and Systems · doi:10.1049/ip-cds:20050359 · Cited by 25
Self-citationTransient thermal analysis of power devices based on Fourier-series thermal model
Du, B., Hudgins, J. L., Santi, E., Bryant, A. T., Palmer, P., & Mantooth, H. A. (2008) · IEEE Power Electronics Specialists Conference (PESC) · doi:10.1109/pesc.2008.4592433 · Cited by 24
Self-citationXiong, Y., Cheng, X., Shen, Z. J., Mi, C. C., Wu, H., & Garg, V. K. (2006) · IEEE Industry Applications Society Annual Meeting (IAS) · doi:10.1109/ias.2006.256739 · Cited by 24
Base-plate solder reliability study of IGBT modules for aeronautical application
Lhommeau, T., Martín, C., Karama, M., Meuret, R., & Mermet-Guyennet, M. (2007) · European Conference on Power Electronics and Applications · doi:10.1109/epe.2007.4417448 · Cited by 23
Condition Monitoring of Electrolytic Capacitors for Power Electronics Applications
Imam, A. M. (2007) · UPT. Syiah Kuala University Library (Syiah Kuala University) · Cited by 22
Mechanical stress dependence of power device electrical characteristics
Tanaka, H., Hotta, K., Kuwano, S., Usui, M., & Ishiko, M. (2006) · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · doi:10.1109/ispsd.2006.1666056 · Cited by 22
3-D thermal simulation of power module packaging
Swan, I. R., Bryant, A. T., Parker-Allotey, N.-A., & Mawby, P. (2009) · IEEE Energy Conversion Congress and Exposition (ECCE) · doi:10.1109/ecce.2009.5316235 · Cited by 18
Self-citationComparison of IGBT Cycling Capabilities for Different AC/AC Topologies
Wei, L., Lipo, T. A., & Lukaszewski, R. A. (2010) · IEEE Transactions on Industry Applications · doi:10.1109/tia.2010.2070478 · Cited by 18
Medium voltage three-level inverter for high speed applications
Janning, J., & Mercier, J.-C. (2007) · European Conference on Power Electronics and Applications · doi:10.1109/epe.2007.4417623 · Cited by 18
Condition monitoring applied to power transformers - an REC experience
Steed, J. (1997) · doi:10.1049/ic:19970497 · Cited by 17
Development of high power press-pack IGBT and its applications
Uchida, Y., Seki, Y., Takahashi, Y., & Ichijoh, M. (2002) · doi:10.1109/icmel.2000.840538 · Cited by 17
Thermal model of power semiconductor devices for electro-thermal circuit simulations
Igić, P., Mawby, P., Towers, M. S., & Batcup, S. (2003) · doi:10.1109/miel.2002.1003167 · Cited by 16
Self-citationOmura, I., Domon, T., Miyake, E., Sakiyama, Y., Ogura, T., Hiyoshi, M., Yamano, N., & Ohashi, H. (2004) · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · doi:10.1109/ispsd.2003.1225243 · Cited by 16
Reliability indicators for lift-off of bond wires in IGBT power-modules
Farokhzad, B., Türkes, P., Wolfgang, E., & Goser, K. (1996) · Microelectronics Reliability · doi:10.1016/0026-2714(96)00216-8 · Cited by 15
Application of press-pack IGBTs in traction refurbishment
Golland, A., & Wakeman, F. (2005) · IEEE Applied Power Electronics Conference and Exposition (APEC) · doi:10.1109/apec.2005.1453338 · Cited by 13
Analysis of PWM frequency control to improve the lifetime of PWM inverter
Wei, L., Mcguire, J., & Lukaszewski, R. A. (2009) · IEEE Energy Conversion Congress and Exposition (ECCE) · doi:10.1109/ecce.2009.5316129 · Cited by 13
Bryant, A. T., Roberts, G. J., Walker, A., Mawby, P., Ueta, T., Nisijima, T., & Hamada, K. (2008) · IEEJ Transactions on Industry Applications · doi:10.1541/ieejias.128.441 · Cited by 12
Self-citationThe Paris law in metals and ceramics
Li, S., Sun, L., Jia, W., & Zhongguang, W. (1995) · Journal of Materials Science Letters · doi:10.1007/bf00633140 · Cited by 12
Maouad, A., Hoffmann, A., Khoury, A., & Charles, J. (2000) · Microelectronics Reliability · doi:10.1016/s0026-2714(00)00002-0 · Cited by 11
Benmansour, A., Azzopardi, S., Martin, J. C., & Woirgard, E. (2007) · Microelectronics Reliability · doi:10.1016/j.microrel.2007.07.049 · Cited by 11
Extensive fatigue investigation of solder joints in IGBT high power modules
Thebaud, J.-M., Woirgard, E., Zardini, C., & Sommer, K. (2002) · IEEE Electronic Components and Technology Conference (ECTC) · doi:10.1109/ectc.2000.853399 · Cited by 11
Electronic components, packaging and production
Halbo, L., & Øhlckers, P. A. (1995) · NORA - Norwegian Open Research Archives · Cited by 11
Rahimo, M. T. A. (1998) · International Conference on Power Electronics and Variable Speed Drives (PEVD) · doi:10.1049/cp:19980555 · Cited by 10
Development of 6.5 kV class IGBT with wide safety operation area
Mochizuki, K., Suekawa, E., Iura, S., & Satoh, K. (2003) · Power Conversion Conference · doi:10.1109/pcc.2002.998555 · Cited by 9
Belmehdi, Y., Azzopardi, S., Delétage, J.-Y., & Woirgard, E. (2009) · IEEE Energy Conversion Congress and Exposition (ECCE) · doi:10.1109/ecce.2009.5316371 · Cited by 8
Semi analytic model for thermal fatigue failure of die attach in power electronic building blocks
Sundararajan, R., McCluskey, P., & Azarm, S. (2002) · doi:10.1109/hitec.1998.676768 · Cited by 8
Partial discharge diagnostics on 3.3 kV, 1.2 kA IGBT modules
Petrarca, C. (1999) · doi:10.1049/cp:19990858 · Cited by 7
The development of advanced linear induction motor systems
Bellamy, G. (2004) · doi:10.1049/cp:20040404 · Cited by 7
Real-time comparison of power module failure modes under in-service conditions
Musallam, M., Johnson, C. M., Yin, C., Lu, H., & Bailey, C. (2009) · Greenwich Academic Literature Archive (University of Greenwich) · Cited by 5
Welleman, A., & Fleischmann, W. (2004) · doi:10.1109/ppc.2003.1277727 · Cited by 5
A study of EOS failures in power IGBT modules
Wu, W., Li, W., Zhang, H., Dong, L., Jacob, P., & Held, M. (2002) · IEEE International Conference on Solid-State and Integrated Circuit Technology · doi:10.1109/icsict.1998.785833 · Cited by 4
Anomalous Thermal Conductivity in Regions of Non-Uniform Die Attach Integrity
Koziarz, W. A., & Gilmour, D. A. (1995) · IEEE International Reliability Physics Symposium proceedings · doi:10.1109/irps.1995.363344 · Cited by 4
Dependence of power MOSFET static burnout on charge distribution in the active region of IRF15O
Stassinopoulos, E. G., Brucker, G. J., Calvel, P., Barillot, C., Gaillard, R., & Gasiot, J. (2002) · European Conference on Radiation and Its Effects on Components and Systems · doi:10.1109/radecs.1993.316560 · Cited by 3
10 kV IGBT press pack modules with series connected chips
Kaufmann, S., & Zwick, F. (2003) · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · doi:10.1109/ispsd.2002.1016178 · Cited by 3
Reliability and microstructure of lead-free solder die attach interface in silicon power devices
Huff, D. N., Katsis, D. C., Stinson-Bagby, K. L., Thacker, T., Lu, G., & van Wyk, J. D. (2004) · IEEE International Reliability Physics Symposium proceedings · doi:10.1109/relphy.2004.1315392 · Cited by 3
Thermal-mechanical Modelling of Power Electronic Module Packaging
Lu, H., Tilford, T., Xue, X., & Bailey, C. (2007) · International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE) · doi:10.1109/esime.2007.359960 · Cited by 3
Advances in power electronic devices
Wolfgang, E., Niedernostheide, F. ‐., Reznik, D., & Schulze, H.-J. (2003) · IEEE International Electric Machines & Drives Conference (IEMDC) · doi:10.1109/iemdc.1999.768670 · Cited by 3
Anomalous thermal conductivity in regions of non-uniform die attach integrity [MCM
Koziarz, W., & Gilmour, D. A. (1995) · IEEE International Reliability Physics Symposium proceedings · doi:10.1109/relphy.1995.513662 · Cited by 2
Applications of the Thermal Step Method to the Characterization of Electric Charge in MOS Components
Fruchier, O., Notingher, P., Agnel, S., Toureille, A., Forest, F., Cunningham, S., Rousset, B., & Sanchez, J.-L. (2007) · IEEE Industry Applications Society Annual Meeting (IAS) · doi:10.1109/07ias.2007.72 · Cited by 2
Design of IGBT gate drive circuit with SOA consideration
Luo, J., Liang, Y. C., & Cho, B.-J. (2005) · doi:10.1109/pedes.1998.1330033 · Cited by 2
Simple realtime condition monitoring tools for low-cost motor drives
Akin, B., Toliyat, H. A., Orguner, U., & Rayner, M. (2007) · International Conference on Electrical Machines and Systems (ICEMS) · doi:10.1109/icems12746.2007.4411947 · Cited by 1
Research works printed but not linked: 10
- grant, 1989, Power MOSFET-Theory and Applications
- scheuermann, 2002, power cycling lifetime of advanced power modules for different temperature swings, Proc Power Convers Intell Motion, 59
- mermet-guyennet, 2008, Reliability requirement for traction power converters, ECPE Workshop Built-in Rel Power Electron Syst
- wolfgang, 2007, Examples for failures in power electronics systems, ECPE Tutorial Rel Power Electron Syst
- fratelli, 1999, reliability test of power igbt's for railway traction, Proc Eur Conf Power Electron Appl
- ramminger, 2006, predicting the crack progression in pbsnag-solder under cyclic loading conditions, Int Conf Integr Power Syst
- agyakwa, 2008, anomalous reliability behaviour of 99.99% and 99.999% pure aluminium wire bonds under thermal cycling, Proc IMAPS 41st Int Symp Microelectron
- dunipace, 2008, test saturation voltage to achieve high efficiency, Power Electron Technol, 32
- coquery, 1999, reliability improvement of the soldering thermal fatigue with alsic technology on traction high-power igbt modules, Proc Eur Conf Power Electron Appl
- 10.1109/63.704154 · DOI
Cited by
Sorted by citations
An Industry-Based Survey of Reliability in Power Electronic Converters
Yang, S., Bryant, A. T., Mawby, P., Xiang, D., Ran, L., & Tavner, P. J. (2011) · IEEE Transactions on Industry Applications · doi:10.1109/tia.2011.2124436 · Cited by 2,058
Self-citationPower Electronics Converters for Wind Turbine Systems
Blaabjerg, F., Liserre, M., & Ma, K. (2011) · IEEE Transactions on Industry Applications · doi:10.1109/tia.2011.2181290 · Cited by 923
Toward Reliable Power Electronics: Challenges, Design Tools, and Opportunities
Wang, H., Liserre, M., & Blaabjerg, F. (2013) · IEEE Industrial Electronics Magazine · doi:10.1109/mie.2013.2252958 · Cited by 919
An Overview of Artificial Intelligence Applications for Power Electronics
Zhao, S., Blaabjerg, F., & Wang, H. (2021) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2020.3024914 · Cited by 947
Future on Power Electronics for Wind Turbine Systems
Blaabjerg, F., & Ma, K. (2013) · IEEE Journal of Emerging and Selected Topics in Power Electronics · doi:10.1109/jestpe.2013.2275978 · Cited by 860
Metadata
- Authors
- Yang, S., Xiang, D., Bryant, A., Mawby, P., Ran, L., & Tavner, P.
- Affiliations
- University of Warwick (GB)
- Durham University (GB)
- Venue
- IEEE Transactions on Power Electronics
- Published
- 2010-11
- Volume
- 25
- Issue
- 11
- Pages
- 2734-2752
- ISSN
- 0885-8993 (ISSN-L)
- 1941-0107
- OpenAlex
- W2167320299
- Cited by
- 1,278
- References
- 135
- Citations by year
- 2026: 65 · 2025: 104 · 2024: 105 · 2023: 137 · 2022: 93 · 2021: 104 · 2020: 93 · 2019: 109 · 2018: 94 · 2017: 79 · 2016: 80 · 2015: 63 · 2014: 60 · 2013: 49 · 2012: 22
- FWCI
- 22.95
- Type
- journal article
- Language
- en
- Open access
- Licence
- Locations
- IEEE Transactions on Power Electronics (publishedVersion)
- Durham Research Online (Durham University) (acceptedVersion)
- Durham Research Online (Durham University) (submittedVersion, cc-by)
- Funders
- Engineering and Physical Sciences Research Council (EP/E02744X/1, EP/E026923/1)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Silicon Carbide Semiconductor Technologies
- Physical Sciences › Engineering › Safety, Risk, Reliability and Quality › Reliability and Maintenance Optimization
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Multilevel Inverters and Converters
- Keywords
- condition monitoring, power semiconductor devices, power converters, device reliability, failure mechanisms, reliability modeling, sensor technology, signal processing, power electronics reliability
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