Selected failure mechanisms of modern power modules
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SiC has lower CTE compared to Al surface (4.3 ppm/°C vs. 22 ppm/°C), which translates to plastic deformation at high junction temperatures.
“Also, SiC has lower CTE compared to Al surface (4.3 ppm/ ◦ C vs. 22 ppm/ ◦ C) which translates to plastic deformation at high junction temperatures [47], [48].”
From AC Power Cycling Test Setup and Condition Monitoring Tools for SiC-Based Traction Inverters (2023) · cites this paper as [47]
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AC Power Cycling Test Setup and Condition Monitoring Tools for SiC-Based Traction Inverters
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“Also, SiC has lower CTE compared to Al surface (4.3 ppm/ ◦ C vs. 22 ppm/ ◦ C) which translates to plastic deformation at high junction temperatures [47], [48].”
BackgroundInfluentialLoad-Dependent Active Thermal Control of Grid-Forming Converters
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- Authors
- Ciappa, M.
- Affiliations
- ETH Zurich (CH)
- Corresponding author
- Ciappa, Mauro
- Venue
- Microelectronics Reliability
- Publisher
- Elsevier BV
- Published
- 2002-04
- Volume
- 42
- Issue
- 4-5
- Pages
- 653-667
- ISSN
- 0026-2714 (ISSN-L)
- OpenAlex
- W2024878069
- Cited by
- 1,039
- References
- 23
- Citations by year
- 2026: 52 · 2025: 57 · 2024: 61 · 2023: 73 · 2022: 56 · 2021: 63 · 2020: 59 · 2019: 62 · 2018: 67 · 2017: 74 · 2016: 65 · 2015: 69 · 2014: 69 · 2013: 51 · 2012: 36
- FWCI
- 1.75
- Type
- journal article
- Language
- en
- Open access
- closed
- Locations
- Microelectronics Reliability (publishedVersion)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Silicon Carbide Semiconductor Technologies
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Integrated Circuits and Semiconductor Failure Analysis
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Semiconductor materials and devices
- Keywords
- power modules, failure mechanisms, IGBT, IGBT reliability, high power applications, failure modes, traction drives
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