Cited by 200Silicon Carbide Semiconductor TechnologiesReliability and Maintenance OptimizationIntegrated Circuits and Semiconductor Failure Analysis

Advanced Accelerated Power Cycling Test for Reliability Investigation of Power Device Modules

Open access
Choi, Ui-Min, Joergensen, Soeren, Blaabjerg, Frede·2016·IEEE Transactions on Power Electronics

Abstract

This paper presents an apparatus and methodology for an advanced accelerated power cycling test of insulated-gate bipolar transistor (IGBT) modules. In this test, the accelerated power cycling test can be performed under more realistic electrical operating conditions with online wear-out monitoring of tested power IGBT module. The various realistic electrical operating conditions close to real three-phase converter applications can be achieved by the simple control method. Further, by the proposed concept of applying the temperature stress, it is possible to apply various magnitudes of temperature swing in a short cycle period and to change the temperature cycle period easily. Thanks to a short temperature cycle period, test results can be obtained in a reasonable test time. A detailed explanation of apparatus such as configuration and control methods for the different functions of accelerated power cycling test setup is given. Then, an improved in situ junction temperature estimation method using on-state collector-emitter voltage VCE_ONand load current is proposed. In addition, a procedure of advanced accelerated power cycling test and test results with 600 V, 30 A transfer molded IGBT modules are presented in order to verify the validity and effectiveness of the proposed apparatus and methodology. Finally, physics-of-failure analysis of tested IGBT modules is provided.

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Registry

Crossref · 10.1109/tpel.2016.2521899

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36 of 36 references verified0 citation errors · 0 not checkable

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Authors
Choi, U.-M., Joergensen, S., & Blaabjerg, F.
Affiliations
Aalborg University (DK)
Venue
IEEE Transactions on Power Electronics
Published
2016
Pages
1-1
ISSN
  • 0885-8993 (ISSN-L)
  • 1941-0107
OpenAlex
W2321308786
Cited by
200
References
36
Citations by year
2026: 7 · 2025: 20 · 2024: 21 · 2023: 26 · 2022: 18 · 2021: 19 · 2020: 19 · 2019: 21 · 2018: 27 · 2017: 16 · 2016: 6
FWCI
10.76
Type
journal article
Language
en
Open access
Locations
  • IEEE Transactions on Power Electronics (publishedVersion)
  • VBN Forskningsportal (Aalborg Universitet) (submittedVersion, other-oa)
Topics
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Silicon Carbide Semiconductor Technologies
  • Physical Sciences › Engineering › Safety, Risk, Reliability and Quality › Reliability and Maintenance Optimization
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Integrated Circuits and Semiconductor Failure Analysis
Keywords
IGBT modules, power device reliability, temperature stress, junction temperature estimation, physics of failure

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