The DOI matches its Crossref record; 129 of the 133 references it cites were found in a registry or an index.
A Comprehensive Review Toward the State-of-the-Art in Failure and Lifetime Predictions of Power Electronic Devices
Open accessAbstract
This paper discusses various types of failure mechanisms, precursor parameters, and accelerated aging-based procedures to estimate the remaining life of power electronic devices. Special attention has been given to summarize the different techniques typically used for measuring the junction temperature, because it plays a vital role during accelerated aging and condition monitoring. We reviewed more than 250 papers, and the references list 139 of them in order to explain and address the advantages and disadvantages of various techniques toward the reliability prognosis. Thus, this paper can be considered as an expedient reference to conduct future research on lifetime prediction of existing power electronic devices.
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“Representative TSEPs include V DS ( on ) , threshold voltage ( V th ), drain leakage current ( I dss ), dI / dt , and gate current ( I gp); these parameters reflect accumulated thermal stress and form the basis of condition-based maintenance strategies [64,71].”
From Thermal Management of Wide-Bandgap Power Semiconductors: Strategies and Challenges in SiC and GaN Power Devices (2025) · cites this paper as [71]
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In the citing paper
“these parameters reflect accumulated thermal stress and form the basis of condition-based maintenance strategies [64,71].”
From Thermal Management of Wide-Bandgap Power Semiconductors: Strategies and Challenges in SiC and GaN Power Devices (2025) · cites this paper as [71]
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“while dI / dt and I gp are commonly used in SiC MOSFETs [64,71].”
From Thermal Management of Wide-Bandgap Power Semiconductors: Strategies and Challenges in SiC and GaN Power Devices (2025) · cites this paper as [71]
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Citations
Cites
A Study of the Effects of Cyclic Thermal Stresses on a Ductile Metal
Coffin, L. F. (1954) · Transactions of the American Society of Mechanical Engineers · doi:10.1115/1.4015020 · Cited by 2,241
Condition Monitoring for Device Reliability in Power Electronic Converters: A Review
Yang, S., Xiang, D., Bryant, A., Mawby, P., Ran, L., & Tavner, P. (2010) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2010.2049377 · Cited by 1,278
Behavior of materials under conditions of thermal stress
Manson, S. S. (1953) · NASA STI Repository (National Aeronautics and Space Administration) · Cited by 1,230
Selected failure mechanisms of modern power modules
Ciappa, M. (2002) · Microelectronics Reliability · doi:10.1016/s0026-2714(02)00042-2 · Cited by 1,039
Survey on Reliability of Power Electronic Systems
Song, Y., & Wang, B. (2012) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2012.2192503 · Cited by 867
Transitioning to Physics-of-Failure as a Reliability Driver in Power Electronics
Wang, H., Liserre, M., Blaabjerg, F., de Place Rimmen, P., Jacobsen, J. B., Kvisgaard, T., & Landkildehus, J. (2014) · IEEE Journal of Emerging and Selected Topics in Power Electronics · doi:10.1109/jestpe.2013.2290282 · Cited by 693
Ageing and Failure Modes of IGBT Modules in High-Temperature Power Cycling
Smet, V., Forest, F., Huselstein, J.-J., Richardeau, F., Khatir, Z., Lefebvre, S., & Berkani, M. (2011) · IEEE Transactions on Industrial Electronics · doi:10.1109/tie.2011.2114313 · Cited by 620
Fast power cycling test of IGBT modules in traction application
Held, M., Jacob, P., Nicoletti, G. J., Scacco, P., & Poech, M. (2002) · IEEE International Conference on Power Electronics and Drive Systems (PEDS) · doi:10.1109/peds.1997.618742 · Cited by 587
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Solder joint fatigue models: review and applicability to chip scale packages
Lee, W. W., Nguyen, L. T., & Selvaduray, G. S. (2000) · Microelectronics Reliability · doi:10.1016/s0026-2714(99)00061-x · Cited by 525
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- valentine, 0, Failure mechanisms of insulated gate bipolar transistors (IGBTs), Proc NREL Photovolt Rel Workshops, 6
- scheuermann, 0, Chip temperature measurement without additional sensors, Bodo's Power Syst, 58
- 2017, Standard Practices for Cycle Counting in Fatigue Analysis Annual Book of ASTM Standards
- 2010, Power Semiconductor Reliability Handbook, Alpha & Omega Semiconductor, 8
- 10.1109/TPEL.2016.2521899 · DOI · Paper page
- lobsiger, 0, Voltage, current and temperature measurement concepts enabling intelligent gate drives, ECPE Workshop Electronics Around the Power Switch Gate Drives Sensors and Control
Cited by
Sorted by citations
An Overview of Artificial Intelligence Applications for Power Electronics
Zhao, S., Blaabjerg, F., & Wang, H. (2021) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2020.3024914 · Cited by 947
Overview of Real-Time Lifetime Prediction and Extension for SiC Power Converters
Ni, Z., Lyu, X., Yadav, O. P., Singh, B. N., Zheng, S., & Cao, D. (2020) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2019.2962503 · Cited by 261
A Review on IGBT Module Failure Modes and Lifetime Testing
Abuelnaga, A. H., Narimani, M., & Bahman, A. S. (2021) · IEEE Access · doi:10.1109/access.2021.3049738 · Cited by 247
A Fault-Tolerant Hybrid Cascaded H-Bridge Multilevel Inverter
Mhiesan, H. G., Wei, Y., Siwakoti, Y. P., & Mantooth, H. A. (2020) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2020.2996097 · Cited by 130
Wide bandgap semiconductor-based integrated circuits
Yuvaraja, S., Khandelwal, V., Tang, X. L., & Li, X. (2023) · Chip · doi:10.1016/j.chip.2023.100072 · Cited by 130
Metadata
- Authors
- Hanif, A., Yu, Y., DeVoto, D., & Khan, F.
- Affiliations
- University of Missouri–Kansas City (US)
- University of Utah (US)
- National Laboratory of the Rockies (US)
- Venue
- IEEE Transactions on Power Electronics
- Published
- 2019-05
- Volume
- 34
- Issue
- 5
- Pages
- 4729-4746
- ISSN
- 0885-8993 (ISSN-L)
- 1941-0107
- OpenAlex
- W2884957744
- Cited by
- 272
- References
- 133
- Citations by year
- 2026: 34 · 2025: 61 · 2024: 40 · 2023: 47 · 2022: 28 · 2021: 30 · 2020: 24 · 2019: 7
- FWCI
- 5.84
- Type
- journal article
- Language
- en
- Open access
- green
- www.osti.gov
- Licence
- Locations
- IEEE Transactions on Power Electronics (publishedVersion)
- OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information) (submittedVersion)
- Funders
- National Renewable Energy Laboratory
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Silicon Carbide Semiconductor Technologies
- Physical Sciences › Engineering › Safety, Risk, Reliability and Quality › Reliability and Maintenance Optimization
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Integrated Circuits and Semiconductor Failure Analysis
- Keywords
- power devices, failure mechanisms, lifetime prediction, accelerated aging, remaining life estimation, junction temperature measurement, condition monitoring
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