Cited by 272Silicon Carbide Semiconductor TechnologiesReliability and Maintenance OptimizationIntegrated Circuits and Semiconductor Failure Analysis

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A Comprehensive Review Toward the State-of-the-Art in Failure and Lifetime Predictions of Power Electronic Devices

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Hanif, Abu, Yu, Yuechuan, DeVoto, Douglas, Khan, Faisal·2019·IEEE Transactions on Power Electronics

DOI 10.1109/tpel.2018.2860587

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Abstract

This paper discusses various types of failure mechanisms, precursor parameters, and accelerated aging-based procedures to estimate the remaining life of power electronic devices. Special attention has been given to summarize the different techniques typically used for measuring the junction temperature, because it plays a vital role during accelerated aging and condition monitoring. We reviewed more than 250 papers, and the references list 139 of them in order to explain and address the advantages and disadvantages of various techniques toward the reliability prognosis. Thus, this paper can be considered as an expedient reference to conduct future research on lifetime prediction of existing power electronic devices.

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Authors: Hanif, A., Yu, Y., DeVoto, D., & Khan, F.
Affiliations: University of Missouri–Kansas City (US)
University of Utah (US)
National Laboratory of the Rockies (US)
ORCID: Hanif, Abu
Yu, Yuechuan
DeVoto, Douglas
Khan, Faisal
Venue: IEEE Transactions on Power Electronics
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Published: 2019-05
Volume: 34
Issue: 5
Pages: 4729-4746
ISSN: 0885-8993 (ISSN-L)
1941-0107
DOI: 10.1109/tpel.2018.2860587
OpenAlex: W2884957744
Cited by: 272
References: 133
Citations by year: 2026: 34 · 2025: 61 · 2024: 40 · 2023: 47 · 2022: 28 · 2021: 30 · 2020: 24 · 2019: 7
FWCI: 5.84
Type: journal article
Language: en
Open access: green
www.osti.gov
Licence: ieeexplore.ieee.org/Xplorehelp/downloads/license-information/IEEE.html (vor)
doi.org/10.15223/policy-029 (stm-asf)
doi.org/10.15223/policy-037 (stm-asf)
Locations: IEEE Transactions on Power Electronics (publishedVersion)
OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information) (submittedVersion)
Funders: National Renewable Energy Laboratory
Topics: Physical Sciences › Engineering › Electrical and Electronic Engineering › Silicon Carbide Semiconductor Technologies
Physical Sciences › Engineering › Safety, Risk, Reliability and Quality › Reliability and Maintenance Optimization
Physical Sciences › Engineering › Electrical and Electronic Engineering › Integrated Circuits and Semiconductor Failure Analysis
Keywords: power devices, failure mechanisms, lifetime prediction, accelerated aging, remaining life estimation, junction temperature measurement, condition monitoring

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A Comprehensive Review Toward the State-of-the-Art in Failure and Lifetime Predictions of Power Electronic Devices

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