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Cited by 11Advancements in Photolithography TechniquesSemiconductor materials and devicesElectron and X-Ray Spectroscopy Techniques

The DOI matches its Crossref record; 2 of the 2 references it cites were found in a registry or an index.

Chemical reactions induced by low-energy electron exposure on a novel inorganic-organic hybrid dry EUV photoresist deposited by molecular atomic layer deposition (MALD)

Le, Dan N., Hwang, Su Min, Woo, Jihoon, Choi, Seungsoo, Park, Taehee, Veyan, Jean-Francois, Tiwale, Nikhil M., Subramanian, Ashwanth, Lee, Won-Il, Nam, Chang-Yong, Choi, Rino, Kim, Jiyoung·2022·International Conference on Extreme Ultraviolet Lithography 2022
DOI 10.1117/12.2641647
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Abstract

Herein, we investigated the chemical reactions associated with low-energy electron exposures on an inorganic-organic hybrid thin film system deposited using molecular atomic layer deposition (MALD) for EUV photoresist applications. Using the hybrid thin films consisting of trimethylaluminum (TMA) and hydroquinone (HQ), we determined the critical doses and thickness contrast of the hybrid materials at various electron energies (up to 400 eV). The custom-built in-situ Fourier-Transform Infrared (FTIR) spectroscopy system, equipped with an electron flood gun and gas residual analyzer (RGA), was employed to monitor the chemical changes induced by low-energy electrons in the hybrid thin films. Based on the in-situ FTIR and RGA results, potential chemical reaction mechanisms responsible for the change in solubility of the TMA/HQ material are proposed.

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Crossref · 10.1117/12.2641647

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2 of 2 references verified0 citation errors · 0 not checkable

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  • Le et al. explored MALD films composed of TMA and hydroquinone, demonstrating utility in generating negative-tone patterns using low-energy electron exposure.

    “Further research by Le et al. explored MALD films composed of TMA and hydroquinone (HQ), demonstrating the utility of the technique in generating negative-tone patterns using low-energy electron exposure [40].”

    From Recent Advances in Metal-Oxide-Based Photoresists for EUV Lithography (2024) · cites this paper as [40]

Citations

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Research works printed but not linked: 15

  1. Levinson, 2018, Current Challenges and Opportunities for EUV Lithography, 10809, 1080903-1
  2. Van Schoot, 2020, High-NA EUV Lithography Exposure Tool: Program Progress, 11323, 1132307-1
  3. van den Brink, 2019, Continued Scaling in Semiconductor Manufacturing Enabled by Advances in Lithography, 1.2.1, 10.1109/IEDM19573.2019.8993590 · DOI
  4. De Silva, 2021, Progress and challenges of EUV patterning material design, 11609, 116090G
  5. Allenet, 2021, Progress in EUV resists towards the deployment of high-NA lithography, 11609, 116090J-1
  6. 10.35848/1347-4065/ac49fa · DOI
  7. 10.1039/C7CS00080D · DOI
  8. Tiwale, 2021, Hybrid resist synthesis by ex-situ vapor-phase infiltration of metal oxides into conventional organic resists, 11612, 116120A-1
  9. Hinsberg, 2021, Contribution of EUV resist counting statistics to stochastic printing failures, J. Micro/Nanopattern. Mater. Metrol, 20, 014603-1
  10. Wise, 2021, Breaking stochastic tradeoffs with a dry deposited and dry developed EUV photoresist system, 11612, 1161203
  11. 10.1021/jp512074n · DOI
  12. 10.1016/j.apsusc.2020.146383 · DOI
  13. 10.1116/1.5134055 · DOI
  14. 10.1016/j.nanoen.2016.02.021 · DOI
  15. 10.1039/D1DT01380G · DOI

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Metadata

Authors
Le, D. N., Hwang, S. M., Woo, J., Choi, S., Park, T., Veyan, J.-F., Tiwale, N. M., Subramanian, A., Lee, W.-I., Nam, C.-Y., Choi, R., & Kim, J.
Affiliations
  • The University of Texas at Dallas (US)
  • Stony Brook University (US)
  • Inha University (KR)
ORCID
Venue
International Conference on Extreme Ultraviolet Lithography 2022
Publisher
SPIE
Published
2022-12-01
Pages
6
DOI
10.1117/12.2641647
OpenAlex
W4308702036
Cited by
11
References
2
Citations by year
2026: 4 · 2025: 2 · 2024: 4 · 2023: 1
FWCI
2.83
Type
conference paper
Language
en
Open access
closed
Locations
International Conference on Extreme Ultraviolet Lithography (publishedVersion)
Topics
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Advancements in Photolithography Techniques
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Semiconductor materials and devices
  • Physical Sciences › Materials Science › Surfaces, Coatings and Films › Electron and X-Ray Spectroscopy Techniques
Keywords
EUV photoresists, trimethylaluminum, hydroquinone, critical dose, solubility, reaction mechanism, in situ FTIR spectroscopy, residual gas analysis

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