Controlled Majority-Inverter Graph Logic With Highly Nonlinear, Self-Rectifying Memristor
Abstract
In this article, for the first time, self-rectifying memristors are exploited for logic-in-memory computation. We report a Pt/TaOx/Ta memristor with salient self-rectifying bipolar features (104ON-/ OFF-ratio, 105rectification ratio, 105nonlinearity, and ~1 pA leakage current), which could support a large passive crossbar array up to 160 Mb with the premise of 10% read margin. Moreover, we propose and experimentally validate a controlled majority-inverter graph logic method based on the self-rectifying switching behaviors, with advantages in computation complexity. Our work is a step forward toward in-memory computing in high-density or even 3-D memristor architectures.
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Owing to its self-rectifying characteristics, the device may operate accurately even in a 1k × 1k array without sneak path disturbance.
“Owing to its self-rectifying characteristics, the device may operate accurately even in a 1k × 1k array without sneak path disturbance34,35”
From Flexible self-rectifying synapse array for energy-efficient edge multiplication in electrocardiogram diagnosis (2025) · cites this paper as [34]
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- Authors
- Ni, R., Yang, L., Huang, X.-D., Ren, S.-G., Wan, T.-Q., Li, Y., & Miao, X.-S.
- Affiliations
- Wuhan National Laboratory for Optoelectronics (CN)
- Venue
- IEEE Transactions on Electron Devices
- Published
- 2021-10
- Volume
- 68
- Issue
- 10
- Pages
- 4897-4902
- ISSN
- 0018-9383 (ISSN-L)
- 1557-9646
- OpenAlex
- W3198681770
- Cited by
- 31
- References
- 32
- Citations by year
- 2026: 6 · 2025: 6 · 2024: 8 · 2023: 6 · 2022: 4 · 2021: 1
- FWCI
- 1.40
- Type
- journal article
- Language
- en
- Open access
- closed
- Licence
- Locations
- IEEE Transactions on Electron Devices (publishedVersion)
- Funders
- National Key Research and Development Plan of Ministry of Science and Technology (MOST) of China (2019YFB2205100)
- National Natural Science Foundation of China (61874164, 92064012, 61841404)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Advanced Memory and Neural Computing
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Ferroelectric and Negative Capacitance Devices
- Life Sciences › Biochemistry, Genetics and Molecular Biology › Molecular Biology › DNA and Biological Computing
- Keywords
- self-rectifying memristors, bipolar switching, in-memory computing, leakage current
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