Physical Unbiased Generation of Random Numbers With Coupled Resistive Switching Devices
Open accessAbstract
The resistive-switching memory (RRAM) is currently under consideration for fast nonvolatile memory thanks to its relatively low cost and high performance. A key concern for RRAM reliability is stochastic switching, which impacts the operation of the digital memory due to distribution broadening. On the other hand, stochastic behaviors are enabling mechanisms for some computing tasks, such as physical unclonable function (PUF) and random number generation (RNG). Here, we present new circuit blocks for physical RNG, based on the coupling of two RRAM devices. The two-resistance scheme allows to overcome the need of probability tracking, where the operation voltage must be tuned to adjust the generation probabilities of 0 and 1. Probability tests are proved successful for one of the three proposed schemes.
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These tRNGs require a few entropy extraction circuits, each of which consumes power at the milliwatt level.
“However, these tRNGs require a few entropy extraction circuits, each of which consumes power at the milliwatt level.”
From Cryptographic transistor for true random number generator with low power consumption (2024) · cites this paper as [12]
Their lack of compatibility with CMOS fabrication standards makes it difficult to apply them directly to the current CMOS logic platform used for mass production.
“Moreover, their lack of compatibility with CMOS fabrication standards makes it difficult to apply them directly to the current CMOS logic platform used for mass production.”
From Cryptographic transistor for true random number generator with low power consumption (2024) · cites this paper as [12]
tRNGs such as RRAM or MRAM are widely studied given their inherent switching stochasticity as an entropy source, which relies on material-induced variations.
“For example, tRNGs such as RRAM or MRAM, which are not Si-based complementary metal-oxide semiconductor (CMOS) devices, are widely studied given their inherent switching stochasticity as an entropy source, which relies on material-induced variations (11–18).”
From Cryptographic transistor for true random number generator with low power consumption (2024) · cites this paper as [12]
Compared with previous TRNGs based on non-volatile memristors, the self-OFF-switching behavior in the diffusive memristor greatly reduces energy consumption because no RESET process is required.
“Compared with previous TRNGs based on non-volatile memristors30, 31, the self-OFF-switching behavior in the diffusive memristor greatly reduces the energy consumption since no RESET process is required.”
From A novel true random number generator based on a stochastic diffusive memristor (2017) · cites this paper as [31]
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Hardware Security Primitives Using Passive RRAM Crossbar Array
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- Authors
- Balatti, S., Ambrogio, S., Carboni, R., Milo, V., Wang, Z., Calderoni, A., Ramaswamy, N., & Ielmini, D.
- Affiliations
- Intermolecular (United States) (US)
- Micron (United States) (US)
- Venue
- IEEE Transactions on Electron Devices
- Published
- 2016-05
- Volume
- 63
- Issue
- 5
- Pages
- 2029-2035
- ISSN
- 0018-9383 (ISSN-L)
- 1557-9646
- OpenAlex
- W2315149045
- Cited by
- 127
- References
- 22
- Citations by year
- 2026: 4 · 2025: 11 · 2024: 18 · 2023: 15 · 2022: 6 · 2021: 13 · 2020: 13 · 2019: 12 · 2018: 17 · 2017: 14 · 2016: 4
- FWCI
- 23.74
- Type
- journal article
- Language
- en
- Open access
- green
- hdl.handle.net
- Locations
- IEEE Transactions on Electron Devices (publishedVersion)
- Virtual Community of Pathological Anatomy (University of Castilla La Mancha) (submittedVersion, other-oa)
- Funders
- European Research Council Consolidator (ERC-2014-CoG-648635-RESCUE)
- Topics
- Physical Sciences › Computer Science › Hardware and Architecture › Physical Unclonable Functions (PUFs) and Hardware Security
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Advanced Memory and Neural Computing
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Ferroelectric and Negative Capacitance Devices
- Keywords
- random number generation, physical unclonable functions, resistive random access memory, stochastic switching, non-volatile memory
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