A novel description of ISFET sensitivity with the buffer capacity and double-layer capacitance as key parameters
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The maximum theoretical pH sensitivity of the SiO2 gate dielectric at this pH range is 47-50 mV dec−1.
“where the maximum theoretical value for the pH sensitivity of the SiO 2 gate dielectric at this range of pH is 47-50 mV dec À1 .22”
From Specific and label-free femtomolar biomarker detection with an electrostatically formed nanowire biosensor (2013) · cites this paper as [22]
Section 3 (page unavailable) calculates theoretical pH sensitivities for SiO₂ and other oxides, so the source supports the subject of the claim. It does not give a 47–50 mV per pH unit maximum for SiO₂ in the specified range; the theoretical maximum it states is 59.2 mV per pH unit, without identifying that as the SiO₂-specific value in that range. (LLM, conf=0.84)
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- Authors
- van Hal, R. E. G., Eijkel, J. C. T., & Bergveld, P.
- Affiliations
- University of Twente (NL)
- ORCID
- Eijkel, J.C.T.
- Venue
- Sensors and Actuators B: Chemical
- Publisher
- Elsevier BV
- Published
- 1995-03
- Volume
- 24
- Issue
- 1-3
- Pages
- 201-205
- ISSN
- 0925-4005 (ISSN-L)
- OpenAlex
- W2165127612
- Cited by
- 311
- References
- 8
- Citations by year
- 2026: 9 · 2025: 10 · 2024: 14 · 2023: 12 · 2022: 13 · 2021: 18 · 2020: 20 · 2019: 17 · 2018: 20 · 2017: 25 · 2016: 19 · 2015: 19 · 2014: 15 · 2013: 23 · 2012: 11
- FWCI
- 0.31
- Type
- journal article
- Language
- en
- Open access
- bronze
- doi.org
- Locations
- Sensors and Actuators B Chemical (publishedVersion)
- University of Twente Research Information (publishedVersion, other-oa)
- University of Twente Research Information (submittedVersion, other-oa)
- Topics
- Physical Sciences › Chemical Engineering › Bioengineering › Analytical Chemistry and Sensors
- Physical Sciences › Engineering › Biomedical Engineering › Analog and Mixed-Signal Circuit Design
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Gas Sensing Nanomaterials and Sensors
- Keywords
- ion-sensitive field-effect transistor, pH sensitivity, buffering capacity, double-layer capacitance, differential capacitance, Gouy-Chapman-Stern theory, electrolyte concentration
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