The DOI matches its Crossref record; 50 of the 50 references it cites were found in a registry or an index.
Step-controlled epitaxial growth of SiC: High quality homoepitaxy
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Citations
Cites
CRC Handbook of Chemistry and Physics
(2014) · doi:10.1201/b17118 · Cited by 57,706
Molecular Theory of Gases and Liquids
Hirschfelder, J. O., Curtiss, C. F., & Bird, R. B. (1955) · Physics Today · doi:10.1063/1.3061949 · Cited by 11,418
The growth of crystals and the equilibrium structure of their surfaces
Burton, W. K., Cabrera, N., & Frank, F. C. (1951) · Philosophical Transactions of the Royal Society of London. Series A, Mathematical and Physical Sciences · doi:10.1098/rsta.1951.0006 · Cited by 5,339
Physics of Semiconductor Devices
ABRAHAMS, J. R., & PRIDHAM, G. J. (1966) · Semiconductor Circuits · doi:10.1016/b978-0-08-011651-8.50006-4 · Cited by 4,571
Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologies
Morkoç, H., Strite, S., Gao, G. B., Lin, M. E., Sverdlov, B., & Burns, M. (1994) · Journal of Applied Physics · doi:10.1063/1.358463 · Cited by 2,733
Some Theorems on the Free Energies of Crystal Surfaces
Herring, C. (1951) · Physical Review · doi:10.1103/physrev.82.87 · Cited by 1,552
Comparison of 6H-SiC, 3C-SiC, and Si for power devices
Bhatnagar, M., & Baliga, B. J. (1993) · IEEE Transactions on Electron Devices · doi:10.1109/16.199372 · Cited by 1,120
Thermal Conductivity of Pure and Impure Silicon, Silicon Carbide, and Diamond
Slack, G. A. (1964) · Journal of Applied Physics · doi:10.1063/1.1713251 · Cited by 695
Polymorphism and Polytypism in Crystals
Verma, A. R., Krishna, P., & Otte, H. M. (1967) · Physics Today · doi:10.1063/1.3034193 · Cited by 692
Phonon Dispersion Curves by Raman Scattering in SiC, Polytypes3C,4H,6H,15R, and21R
Feldman, D. W., Parker, J. H., Choyke, W. J., & Patrick, L. (1968) · Physical Review · doi:10.1103/physrev.173.787 · Cited by 558
Cited by
Material Science and Device Physics in SiC Technology for High-Voltage Power Devices
Kimoto, T. (2015) · Japanese Journal of Applied Physics · doi:10.7567/jjap.54.040103 · Cited by 1,176
Self-citationUltrahigh-quality silicon carbide single crystals
Nakamura, D., Gunjishima, I., Yamaguchi, S., Ito, T., Okamoto, A., Kondo, H., Onda, S., & Takatori, K. (2004) · Nature · doi:10.1038/nature02810 · Cited by 433
Wide-bandgap semiconductor materials: For their full bloom
Fujita, S. (2015) · Japanese Journal of Applied Physics · doi:10.7567/jjap.54.030101 · Cited by 383
Defect engineering in SiC technology for high-voltage power devices
Kimoto, T., & Watanabe, H. (2020) · Applied Physics Express · doi:10.35848/1882-0786/abc787 · Cited by 364
Self-citationBulk and epitaxial growth of silicon carbide
Kimoto, T. (2016) · Progress in Crystal Growth and Characterization of Materials · doi:10.1016/j.pcrysgrow.2016.04.018 · Cited by 222
Self-citation
Metadata
- Authors
- Matsunami, H., & Kimoto, T.
- Venue
- Materials Science and Engineering: R: Reports
- Publisher
- Elsevier BV
- Published
- 1997-08
- Volume
- 20
- Issue
- 3
- Pages
- 125-166
- ISSN
- 0927-796X (ISSN-L)
- OpenAlex
- W2094246053
- Cited by
- 613
- References
- 50
- FWCI
- 5.53
- Type
- journal article
- Language
- en
- Open access
- closed
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Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.
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- CoChat. (2026). Citation check: Step-controlled epitaxial growth of SiC: High quality homoepitaxy. https://app.cochat.ai/papers/10.1016/s0927-796x(97)00005-3
- The paper
- Matsunami, H., & Kimoto, T. (1997). Step-controlled epitaxial growth of SiC: High quality homoepitaxy. Materials Science and Engineering: R: Reports. https://doi.org/10.1016/s0927-796x(97)00005-3
Data sources
Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.
