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Cited by 595

The DOI matches its Crossref record; 6 of the 6 references it cites were found in a registry or an index.

Microstructured Porous Pyramid-Based Ultrahigh Sensitive Pressure Sensor Insensitive to Strain and Temperature

Yang, Jun Chang, Kim, Jin-Oh, Oh, Jinwon, Kwon, Se Young, Sim, Joo Yong, Kim, Da Won, Choi, Han Byul, Park, Steve·2019·ACS Applied Materials & Interfaces

Abstract

An ultrahigh sensitive capacitive pressure sensor based on a porous pyramid dielectric layer (PPDL) is reported. Compared to that of the conventional pyramid dielectric layer, the sensitivity was drastically increased to 44.5 kPa –1 in the pressure range <100 Pa, an unprecedented sensitivity for capacitive pressure sensors. The enhanced sensitivity is attributed to a lower compressive modulus and larger change in an effective dielectric constant under pressure. By placing the pressure sensors on islands of hard elastomer embedded in a soft elastomer substrate, the sensors exhibited insensitivity to strain. The pressure sensors were also nonresponsive to temperature. Finally, a contact resistance-based pressure sensor is also demonstrated by chemically grafting PPDL with a conductive polymer, which also showed drastically enhanced sensitivity.

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Metadata

Authors
Yang, J. C., Kim, J.-O., Oh, J., Kwon, S. Y., Sim, J. Y., Kim, D. W., Choi, H. B., & Park, S.
Venue
ACS Applied Materials & Interfaces
Published
2019-05-06
Volume
11
Issue
21
Pages
19472-19480
ISSN
  • 1944-8244 (ISSN-L)
  • 1944-8252
OpenAlex
W2944393950
Cited by
595
References
6
FWCI
20.07
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Microstructured Porous Pyramid-Based Ultrahigh Sensitive Pressure Sensor Insensitive to Strain and Temperature. https://app.cochat.ai/papers/10.1021/acsami.9b03261
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Yang, J. C., Kim, J.-O., Oh, J., Kwon, S. Y., Sim, J. Y., Kim, D. W., Choi, H. B., & Park, S. (2019). Microstructured Porous Pyramid-Based Ultrahigh Sensitive Pressure Sensor Insensitive to Strain and Temperature. ACS Applied Materials & Interfaces. https://doi.org/10.1021/acsami.9b03261

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