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Cited by 319

The DOI matches its Crossref record; 31 of the 31 references it cites were found in a registry or an index.

Multidirection Piezoelectricity in Mono- and Multilayered Hexagonal α-In2Se3

Xue, Fei, Zhang, Junwei, Hu, Weijin, Hsu, Wei-Ting, Han, Ali, Leung, Siu-Fung, Huang, Jing-Kai, Wan, Yi, Liu, Shuhai, Zhang, Junli, He, Jr-Hau, Chang, Wen-Hao, Wang, Zhong Lin, Zhang, Xixiang, Li, Lain-Jong·2018·ACS Nano

Abstract

Piezoelectric materials have been widely used for sensors, actuators, electronics, and energy conversion. Two-dimensional (2D) ultrathin semiconductors, such as monolayer h-BN and MoS 2 with their atom-level geometry, are currently emerging as new and attractive members of the piezoelectric family. However, their piezoelectric polarization is commonly limited to the in-plane direction of odd-number ultrathin layers, largely restricting their application in integrated nanoelectromechanical systems. Recently, theoretical calculations have predicted the existence of out-of-plane and in-plane piezoelectricity in monolayer α-In 2 Se 3 . Here, we experimentally report the coexistence of out-of-plane and in-plane piezoelectricity in monolayer to bulk α-In 2 Se 3, attributed to their noncentrosymmetry originating from the hexagonal stacking. Specifically, the corresponding d 33 piezoelectric coefficient of α-In 2 Se 3 increases from 0.34 pm/V (monolayer) to 5.6 pm/V (bulk) without any odd–even effect. In addition, we also demonstrate a type of α-In 2 Se 3 -based flexible piezoelectric nanogenerator as an energy-harvesting cell and electronic skin. The out-of-plane and in-plane piezoelectricity in α-In 2 Se 3 flakes offers an opportunity to enable both directional and nondirectional piezoelectric devices to be applicable for self-powered systems and adaptive and strain-tunable electronics/optoelectronics.

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Crossref · 10.1021/acsnano.8b02152

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Metadata

Authors
Xue, F., Zhang, J., Hu, W., Hsu, W.-T., Han, A., Leung, S.-F., Huang, J.-K., Wan, Y., Liu, S., Zhang, J., He, J.-H., Chang, W.-H., Wang, Z. L., Zhang, X., & Li, L.-J.
Venue
ACS Nano
Published
2018-04-25
Volume
12
Issue
5
Pages
4976-4983
ISSN
  • 1936-0851 (ISSN-L)
  • 1936-086X
OpenAlex
W2799694481
Cited by
319
References
31
FWCI
10.21
Type
journal article
Language
en
Open access
closed

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