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High Turnover Frequency of Hydrogen Evolution Reaction on Amorphous MoS2 Thin Film Directly Grown by Atomic Layer Deposition

Shin, Seokhee, Jin, Zhenyu, Kwon, Do Hyun, Bose, Ranjith, Min, Yo-Sep·2015·Langmuir
DOI 10.1021/la504162u
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Abstract

Recently amorphous MoS2 thin film has attracted great attention as an emerging material for electrochemical hydrogen evolution reaction (HER) catalyst. Here we prepare the amorphous MoS2 catalyst on Au by atomic layer deposition (ALD) using molybdenum hexacarbonyl (Mo(CO)6) and dimethyl disulfide (CH3S2CH3) as Mo and S precursors, respectively. Each active site of the amorphous MoS2 film effectively catalyzes the HER with an excellent turnover frequency of 3 H2/s at 0.215 V versus the reversible hydrogen electrode (RHE). The Tafel slope (47 mV/dec) on the amorphous film suggests the Volmer-Heyrovsky mechanism as a major pathway for the HER in which a primary discharging step (Volmer reaction) for hydrogen adsorption is followed by the rate-determining electrochemical desorption of hydrogen gas (Heyrovsky reaction). In addition, the amorphous MoS2 thin film is electrically evaluated to be rather conductive (0.22 Ω(-1) cm(-1) at room temperature) with a low activation energy of 0.027 eV. It is one of origins for the high catalytic activity of the amorphous MoS2 catalyst.

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Metadata

Authors
Shin, S., Jin, Z., Kwon, D. H., Bose, R., & Min, Y.-S.
Venue
Langmuir
Publisher
American Chemical Society (ACS)
Published
2015-01-09
Volume
31
Issue
3
Pages
1196-1202
ISSN
  • 0743-7463 (ISSN-L)
  • 1520-5827
DOI
10.1021/la504162u
OpenAlex
W2334887511
Cited by
207
References
13
FWCI
6.44
Type
journal article
Language
en
Open access
closed
Funders
  • Small and Medium Business Administration (C0147404)
  • National Research Foundation of Korea (NRF-2014R1A1A2055812)

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CoChat. (2026). Citation check: High Turnover Frequency of Hydrogen Evolution Reaction on Amorphous MoS2 Thin Film Directly Grown by Atomic Layer Deposition. https://app.cochat.ai/papers/10.1021/la504162u
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Shin, S., Jin, Z., Kwon, D. H., Bose, R., & Min, Y.-S. (2015). High Turnover Frequency of Hydrogen Evolution Reaction on Amorphous MoS2 Thin Film Directly Grown by Atomic Layer Deposition. Langmuir. https://doi.org/10.1021/la504162u

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