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Double-Gate Nanowire Field Effect Transistor for a Biosensor

Ahn, Jae-Hyuk, Choi, Sung-Jin, Han, Jin-Woo, Park, Tae Jung, Lee, Sang Yup, Choi, Yang-Kyu·2010·Nano Letters

Abstract

A silicon nanowire field effect transistor (FET) straddled by the double-gate was demonstrated for biosensor application. The separated double-gates, G1 (primary) and G2 (secondary), allow independent voltage control to modulate channel potential. Therefore, the detection sensitivity was enhanced by the use of G2. By applying weakly positive bias to G2, the sensing window was significantly broadened compared to the case of employing G1 only, which is nominally used in conventional nanowire FET-based biosensors. The charge effect arising from biomolecules was also analyzed. Double-gate nanowire FET can pave the way for an electrically working biosensor without a labeling process.

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Research works printed but not linked: 17

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Metadata

Authors
Ahn, J.-H., Choi, S.-J., Han, J.-W., Park, T. J., Lee, S. Y., & Choi, Y.-K.
Venue
Nano Letters
Published
2010-07-12
Volume
10
Issue
8
Pages
2934-2938
ISSN
  • 1530-6984 (ISSN-L)
  • 1530-6992
OpenAlex
W2108703737
Cited by
178
References
3
FWCI
7.83
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Double-Gate Nanowire Field Effect Transistor for a Biosensor. https://app.cochat.ai/papers/10.1021/nl1010965
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Ahn, J.-H., Choi, S.-J., Han, J.-W., Park, T. J., Lee, S. Y., & Choi, Y.-K. (2010). Double-Gate Nanowire Field Effect Transistor for a Biosensor. Nano Letters. https://doi.org/10.1021/nl1010965

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