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Epitaxial Monolayer MoS2 on Mica with Novel Photoluminescence
Abstract
Molybdenum disulfide (MoS2) is back in the spotlight because of the indirect-to-direct bandgap tunability and valley related physics emerging in the monolayer regime. However, rigorous control of the monolayer thickness is still a huge challenge for commonly utilized physical exfoliation and chemical synthesis methods. Herein, we have successfully grown predominantly monolayer MoS2 on an inert and nearly lattice-matching mica substrate by using a low-pressure chemical vapor deposition method. The growth is proposed to be mediated by an epitaxial mechanism, and the epitaxial monolayer MoS2 is intrinsically strained on mica due to a small adlayer-substrate lattice mismatch (~2.7%). Photoluminescence (PL) measurements indicate strong single-exciton emission in as-grown MoS2 and room-temperature PL helicity (circular polarization ~0.35) on transferred samples, providing straightforward proof of the high quality of the prepared monolayer crystals. The homogeneously strained high-quality monolayer MoS2 prepared in this study could competitively be exploited for a variety of future applications.
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Metadata
- Authors
- Ji, Q., Zhang, Y., Gao, T., Zhang, Y., Ma, D., Liu, M., Chen, Y., Qiao, X., Tan, P.-H., Kan, M., Feng, J., Sun, Q., & Liu, Z.
- Venue
- Nano Letters
- Publisher
- American Chemical Society (ACS)
- Published
- 2013-08-02
- Volume
- 13
- Issue
- 8
- Pages
- 3870-3877
- ISSN
- 1530-6984 (ISSN-L)
- 1530-6992
- OpenAlex
- W2019638401
- Cited by
- 593
- References
- 43
- FWCI
- 26.05
- Type
- journal article
- Language
- en
- Open access
- closed
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