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Stretching and Breaking of Ultrathin MoS2
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We report on measurements of the stiffness and breaking strength of monolayer MoS(2), a new semiconducting analogue of graphene. Single and bilayer MoS(2) is exfoliated from bulk and transferred to a substrate containing an array of microfabricated circular holes. The resulting suspended, free-standing membranes are deformed and eventually broken using an atomic force microscope. We find that the in-plane stiffness of monolayer MoS(2) is 180 ± 60 Nm(-1), corresponding to an effective Young's modulus of 270 ± 100 GPa, which is comparable to that of steel. Breaking occurs at an effective strain between 6 and 11% with the average breaking strength of 15 ± 3 Nm(-1) (23 GPa). The strength of strongest monolayer membranes is 11% of its Young's modulus, corresponding to the upper theoretical limit which indicates that the material can be highly crystalline and almost defect-free. Our results show that monolayer MoS(2) could be suitable for a variety of applications such as reinforcing elements in composites and for fabrication of flexible electronic devices.
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Cites
Electric Field Effect in Atomically Thin Carbon Films
Novoselov, K. S., Geim, A. K., Morozov, S. V., Jiang, D., Zhang, Y., Dubonos, S. V., Grigorieva, I. V., & Firsov, A. A. (2004) · Science · doi:10.1126/science.1102896 · Cited by 66,834
Two-dimensional gas of massless Dirac fermions in graphene
Novoselov, K. S., Geim, A. K., Morozov, S. V., Jiang, D., Katsnelson, M. I., Grigorieva, I. V., Dubonos, S. V., & Firsov, A. A. (2005) · Nature · doi:10.1038/nature04233 · Cited by 21,611
Measurement of the Elastic Properties and Intrinsic Strength of Monolayer Graphene
Lee, C., Wei, X., Kysar, J. W., & Hone, J. (2008) · Science · doi:10.1126/science.1157996 · Cited by 20,847
Atomically Thin MoS 2 : A New Direct-Gap Semiconductor
Mak, K. F., Lee, C., Hone, J., Shan, J., & Heinz, T. F. (2010) · Physical Review Letters · doi:10.1103/physrevlett.105.136805 · Cited by 15,586
Radisavljevic, B., Radenovic, A., Brivio, J., Giacometti, V., & Kis, A. (2011) · Nature Nanotechnology · doi:10.1038/nnano.2010.279 · Cited by 14,939
Self-citationExperimental observation of the quantum Hall effect and Berry's phase in graphene
Zhang, Y., Tan, Y.-W., Stormer, H. L., & Kim, P. (2005) · Nature · doi:10.1038/nature04235 · Cited by 13,435
Two-dimensional atomic crystals
Novoselov, K. S., Jiang, D., Schedin, F., Booth, T. J., Khotkevich, V. V., Morozov, S. V., & Geim, A. K. (2005) · Proceedings of the National Academy of Sciences · doi:10.1073/pnas.0502848102 · Cited by 11,788
Emerging Photoluminescence in Monolayer MoS2
Splendiani, A., Sun, L., Zhang, Y., Li, T., Kim, J., Chim, C.-Y., Galli, G., & Wang, F. (2010) · Nano Letters · doi:10.1021/nl903868w · Cited by 9,501
Two-Dimensional Nanosheets Produced by Liquid Exfoliation of Layered Materials
Coleman, J. N., Lotya, M., O’Neill, A., Bergin, S. D., King, P. J., Khan, U., Young, K., Gaucher, A., De, S., Smith, R. J., et al. (2011) · Science · doi:10.1126/science.1194975 · Cited by 7,242
Strength and Breaking Mechanism of Multiwalled Carbon Nanotubes Under Tensile Load
Yu, M.-F., Lourie, O., Dyer, M. J., Moloni, K., Kelly, T. F., & Ruoff, R. S. (2000) · Science · doi:10.1126/science.287.5453.637 · Cited by 5,310
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Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
Wang, Q. H., Kalantar-Zadeh, K., Kis, A., Coleman, J. N., & Strano, M. S. (2012) · Nature Nanotechnology · doi:10.1038/nnano.2012.193 · Cited by 16,374
Self-citationThe chemistry of two-dimensional layered transition metal dichalcogenide nanosheets
Chhowalla, M., Shin, H. S., Eda, G., Li, L.-J., Loh, K. P., & Zhang, H. (2013) · Nature Chemistry · doi:10.1038/nchem.1589 · Cited by 10,034
Recent development of two-dimensional transition metal dichalcogenides and their applications
Choi, W., Choudhary, N., Han, G. H., Park, J., Akinwande, D., & Lee, Y. H. (2017) · Materials Today · doi:10.1016/j.mattod.2016.10.002 · Cited by 2,769
Piezoelectricity of single-atomic-layer MoS2 for energy conversion and piezotronics
Wu, W., Wang, L., Li, Y., Zhang, F., Lin, L., Niu, S., Chenet, D., Zhang, X., Hao, Y., Heinz, T. F., et al. (2014) · Nature · doi:10.1038/nature13792 · Cited by 2,287
Metal dichalcogenide nanosheets: preparation, properties and applications
Huang, X., Zeng, Z., & Zhang, H. (2013) · Chemical Society Reviews · doi:10.1039/c2cs35387c · Cited by 2,030
Two-dimensional flexible nanoelectronics
Akinwande, D., Petrone, N., & Hone, J. (2014) · Nature Communications · doi:10.1038/ncomms6678 · Cited by 1,910
Georgiou, T., Jalil, R., Belle, B. D., Britnell, L., Gorbachev, R. V., Morozov, S. V., Kim, Y.-J., Gholinia, A., Haigh, S. J., Makarovsky, O., et al. (2013) · Nature Nanotechnology · doi:10.1038/nnano.2012.224 · Cited by 1,751
Optoelectronic devices based on electrically tunable p–n diodes in a monolayer dichalcogenide
Baugher, B. W. H., Churchill, H. O. H., Yang, Y., & Jarillo-Herrero, P. (2014) · Nature Nanotechnology · doi:10.1038/nnano.2014.25 · Cited by 1,523
Local Strain Engineering in Atomically Thin MoS2
Castellanos-Gomez, A., Roldán, R., Cappelluti, E., Buscema, M., Guinea, F., van der Zant, H. S. J., & Steele, G. A. (2013) · Nano Letters · doi:10.1021/nl402875m · Cited by 1,309
Zhang, X., Qiao, X.-F., Shi, W., Wu, J.-B., Jiang, D.-S., & Tan, P.-H. (2015) · Chemical Society Reviews · doi:10.1039/c4cs00282b · Cited by 1,299
Photocurrent generation with two-dimensional van der Waals semiconductors
Buscema, M., Island, J. O., Groenendijk, D. J., Blanter, S. I., Steele, G. A., van der Zant, H. S. J., & Castellanos-Gomez, A. (2015) · Chemical Society Reviews · doi:10.1039/c5cs00106d · Cited by 1,051
MoS2 Field-Effect Transistor for Next-Generation Label-Free Biosensors
Sarkar, D., Liu, W., Xie, X., Anselmo, A. C., Mitragotri, S., & Banerjee, K. (2014) · ACS Nano · doi:10.1021/nn5009148 · Cited by 1,047
Environmental Applications of 2D Molybdenum Disulfide (MoS2) Nanosheets
Wang, Z., & Mi, B. (2017) · Environmental Science & Technology · doi:10.1021/acs.est.7b01466 · Cited by 914
Shi, Y., Li, H., & Li, L.-J. (2015) · Chemical Society Reviews · doi:10.1039/c4cs00256c · Cited by 845
Enhancing Electrocatalytic Water Splitting by Strain Engineering
You, B., Tang, M. T., Tsai, C., Abild‐Pedersen, F., Zheng, X., & Li, H. (2019) · Advanced Materials · doi:10.1002/adma.201807001 · Cited by 793
Second harmonic microscopy of monolayer MoS2
Kumar, N., Najmaei, S., Cui, Q., Ceballos, F., Ajayan, P. M., Lou, J., & Zhao, H. (2013) · Physical Review B · doi:10.1103/physrevb.87.161403 · Cited by 699
Band Gap Engineering with Ultralarge Biaxial Strains in Suspended Monolayer MoS2
Lloyd, D., Liu, X., Christopher, J. W., Cantley, L., Wadehra, A., Kim, B. L., Goldberg, B. B., Swan, A. K., & Bunch, J. S. (2016) · Nano Letters · doi:10.1021/acs.nanolett.6b02615 · Cited by 624
Epitaxial Monolayer MoS2 on Mica with Novel Photoluminescence
Ji, Q., Zhang, Y., Gao, T., Zhang, Y., Ma, D., Liu, M., Chen, Y., Qiao, X., Tan, P.-H., Kan, M., et al. (2013) · Nano Letters · doi:10.1021/nl401938t · Cited by 593
Strain engineering in semiconducting two-dimensional crystals
Roldán, R., Castellanos-Gomez, A., Cappelluti, E., & Guinea, F. (2015) · Journal of Physics: Condensed Matter · doi:10.1088/0953-8984/27/31/313201 · Cited by 527
Direct Laser‐Patterned Micro‐Supercapacitors from Paintable MoS2 Films
Cao, L., Yang, S., Gao, W., Liu, Z., Gong, Y., Ma, L., Shi, G., Lei, S., Zhang, Y., Zhang, S., et al. (2013) · Small · doi:10.1002/smll.201203164 · Cited by 513
Covalent Nitrogen Doping and Compressive Strain in MoS2 by Remote N2 Plasma Exposure
Azcatl, A., Qin, X., Prakash, A., Zhang, C., Cheng, L., Wang, Q., Lu, N., Kim, M. J., Kim, J., Cho, K., et al. (2016) · Nano Letters · doi:10.1021/acs.nanolett.6b01853 · Cited by 491
Electronic properties of the MoS2-WS2heterojunction
Kośmider, K., & Fernández-Rossier, J. (2013) · Physical Review B · doi:10.1103/physrevb.87.075451 · Cited by 489
Optoelectronic crystal of artificial atoms in strain-textured molybdenum disulphide
Li, H., Contryman, A. W., Qian, X., Ardakani, S. M., Gong, Y., Wang, X., Weisse, J. M., Lee, C. H., Zhao, J., Ajayan, P. M., et al. (2015) · Nature Communications · doi:10.1038/ncomms8381 · Cited by 478
He, Z., & Que, W. (2016) · Applied Materials Today · doi:10.1016/j.apmt.2016.02.001 · Cited by 438
Samadi, M., Sarikhani, N., Zirak, M., Zhang, H., Zhang, H.-L., & Moshfegh, A. Z. (2018) · Nanoscale Horizons · doi:10.1039/c7nh00137a · Cited by 408
Jiang, J.-W., Park, H. S., & Rabczuk, T. (2013) · Journal of Applied Physics · doi:10.1063/1.4818414 · Cited by 408
Rational Design of Flexible Two-Dimensional MXenes with Multiple Functionalities
Fu, Z., Wang, N., Legut, D., Si, C., Zhang, Q., Du, S., Germann, T. C., Francisco, J. S., & Zhang, R. (2019) · Chemical Reviews · doi:10.1021/acs.chemrev.9b00348 · Cited by 396
Electron and Hole Mobilities in Single-Layer WSe2
Allain, A., & Kis, A. (2014) · ACS Nano · doi:10.1021/nn5021538 · Cited by 382
Self-citationLi, H., Li, Y., Aljarb, A., Shi, Y., & Li, L.-J. (2018) · Chemical Reviews · doi:10.1021/acs.chemrev.7b00212 · Cited by 382
Two-terminal floating-gate memory with van der Waals heterostructures for ultrahigh on/off ratio
Vu, Q. A., Shin, Y. S., Kim, Y. R., Nguyen, V. L., Kang, W. T., Kim, H., Luong, D. H., Lee, I. M., Lee, K., Ko, D.-S., et al. (2016) · Nature Communications · doi:10.1038/ncomms12725 · Cited by 371
Strain engineering in two-dimensional nanomaterials beyond graphene
Deng, S., Sumant, A. V., & Berry, V. (2018) · Nano Today · doi:10.1016/j.nantod.2018.07.001 · Cited by 369
Poncé, S., Li, W., Reichardt, S., & Giustino, F. (2020) · Reports on Progress in Physics · doi:10.1088/1361-6633/ab6a43 · Cited by 357
Black phosphorus and its isoelectronic materials
Xia, F., Wang, H., Hwang, J. C. M., Neto, A. H. C., & Yang, L. (2019) · Nature Reviews Physics · doi:10.1038/s42254-019-0043-5 · Cited by 322
Two‐dimensional materials: From mechanical properties to flexible mechanical sensors
Jiang, H., Zheng, L., Liu, Z., & Wang, X. (2020) · InfoMat · doi:10.1002/inf2.12072 · Cited by 322
Strain-Induced Spatial and Spectral Isolation of Quantum Emitters in Mono- and Bilayer WSe2
Kumar, S., Kaczmarczyk, A., & Gerardot, B. D. (2015) · Nano Letters · doi:10.1021/acs.nanolett.5b03312 · Cited by 316
Strain-dependent modulation of conductivity in single-layer transition-metal dichalcogenides
Ghorbani-Asl, M., Borini, S., Kuc, A., & Heine, T. (2013) · Physical Review B · doi:10.1103/physrevb.87.235434 · Cited by 313
Pressure-Induced Metallization of Molybdenum Disulfide
Chi, Z.-H., Zhao, X.-M., Zhang, H., Goncharov, A. F., Lobanov, S. S., Kagayama, T., Sakata, M., & Chen, X.-J. (2014) · Physical Review Letters · doi:10.1103/physrevlett.113.036802 · Cited by 309
Hanlon, D., Backes, C., Higgins, T. M., Hughes, M., O’Neill, A., King, P., McEvoy, N., Duesberg, G. S., Mendoza Sanchez, B., Pettersson, H., et al. (2014) · Chemistry of Materials · doi:10.1021/cm500271u · Cited by 306
Fabrication of transition metal selenides and their applications in energy storage
Lu, T., Dong, S., Zhang, C., Zhang, L., & Cui, G. (2017) · Coordination Chemistry Reviews · doi:10.1016/j.ccr.2016.11.005 · Cited by 292
Excitonic devices with van der Waals heterostructures: valleytronics meets twistronics
Ciarrocchi, A., Tagarelli, F., Avsar, A., & Kis, A. (2022) · Nature Reviews Materials · doi:10.1038/s41578-021-00408-7 · Cited by 291
Self-citationElectrical and Elastic Properties of Individual Single‐Layer Nb4C3Tx MXene Flakes
Lipatov, A., Alhabeb, M., Lu, H., Zhao, S., Loes, M. J., Vorobeva, N. S., Dall'Agnese, Y., Gao, Y., Gruverman, A., Gogotsi, Y., et al. (2020) · Advanced Electronic Materials · doi:10.1002/aelm.201901382 · Cited by 283
Photovoltaic and Photothermoelectric Effect in a Double-Gated WSe2Device
Groenendijk, D. J., Buscema, M., Steele, G. A., Michaelis de Vasconcellos, S., Bratschitsch, R., van der Zant, H. S. J., & Castellanos-Gomez, A. (2014) · Nano Letters · doi:10.1021/nl502741k · Cited by 273
Phase-Engineered Synthesis of Centimeter-Scale 1T′- and 2H-Molybdenum Ditelluride Thin Films
Park, J. C., Yun, S. J., Kim, H., Park, J.-H., Chae, S. H., An, S.-J., Kim, J.-G., Kim, S. M., Kim, K. K., & Lee, Y. H. (2015) · ACS Nano · doi:10.1021/acsnano.5b02511 · Cited by 270
Measuring Interlayer Shear Stress in Bilayer Graphene
Wang, G., Dai, Z., Wang, Y., Tan, P., Liu, L., Xu, Z., Wei, Y., Huang, R., & Zhang, Z. (2017) · Physical Review Letters · doi:10.1103/physrevlett.119.036101 · Cited by 267
Jiang, P., Qian, X., Gu, X., & Yang, R. (2017) · Advanced Materials · doi:10.1002/adma.201701068 · Cited by 239
Huang, Y.-C., Liu, Y., Ma, C., Cheng, H.-C., He, Q., Wu, H., Wang, C., Lin, C.-Y., Huang, Y., & Duan, X. (2020) · Nature Electronics · doi:10.1038/s41928-019-0356-5 · Cited by 233
Defect Engineering in Single-Layer MoS 2 Using Heavy Ion Irradiation
He, Z., Zhao, R., Chen, X., Chen, H., Zhu, Y., Su, H., Huang, S., Xue, J., Dai, J., Cheng, S., et al. (2018) · ACS Applied Materials & Interfaces · doi:10.1021/acsami.8b17145 · Cited by 213
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Metadata
- Authors
- Bertolazzi, S., Brivio, J., & Kis, A.
- Venue
- ACS Nano
- Publisher
- American Chemical Society (ACS)
- Published
- 2011-11-16
- Volume
- 5
- Issue
- 12
- Pages
- 9703-9709
- ISSN
- 1936-0851 (ISSN-L)
- 1936-086X
- OpenAlex
- W2104029981
- Cited by
- 2,680
- References
- 31
- FWCI
- 39.81
- Type
- journal article
- Language
- en
- Open access
- green
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