The DOI matches its Crossref record; 38 of the 38 references it cites were found in a registry or an index.
Two-dimensional quasi-freestanding molecular crystals for high-performance organic field-effect transistors
Open accessAbstract
Two-dimensional atomic crystals are extensively studied in recent years due to their exciting physics and device applications. However, a molecular counterpart, with scalable processability and competitive device performance, is still challenging. Here, we demonstrate that high-quality few-layer dioctylbenzothienobenzothiophene molecular crystals can be grown on graphene or boron nitride substrate via van der Waals epitaxy, with precisely controlled thickness down to monolayer, large-area single crystal, low process temperature and patterning capability. The crystalline layers are atomically smooth and effectively decoupled from the substrate due to weak van der Waals interactions, affording a pristine interface for high-performance organic transistors. As a result, monolayer dioctylbenzothienobenzothiophene molecular crystal field-effect transistors on boron nitride show record-high carrier mobility up to 10 cm2 V−1 s−1 and aggressively scaled saturation voltage ~1 V. Our work unveils an exciting new class of two-dimensional molecular materials for electronic and optoelectronic applications. Inorganic two-dimensional atomic crystals exhibit a variety of unusual but practically useful properties. Here, the authors produce an organic counterpart, atomically smooth monolayers of a molecular crystal, and use this organic analogue of graphene in high-performance organic field-effect transistors.
Overview
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Integrity signals
Registry
Cites
Statistics
Verification
Claims the paper makes
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Self-check
Percentages, sums and reported differences re-computed from the paper’s own numbers.
The self-check needs the paper’s full text.
Citations
Cites
Generalized Gradient Approximation Made Simple
Perdew, J. P., Burke, K., & Ernzerhof, M. (1996) · Physical Review Letters · doi:10.1103/physrevlett.77.3865 · Cited by 215,824
Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set
Kresse, G., & Furthmüller, J. (1996) · Physical Review B · doi:10.1103/physrevb.54.11169 · Cited by 123,652
Projector augmented-wave method
Blöchl, P. E. (1994) · Physical Review B · doi:10.1103/physrevb.50.17953 · Cited by 92,732
Geim, A. K., & Novoselov, K. S. (2007) · Nature Materials · doi:10.1038/nmat1849 · Cited by 39,979
Semiempirical GGA‐type density functional constructed with a long‐range dispersion correction
Grimme, S. (2006) · Journal of Computational Chemistry · doi:10.1002/jcc.20495 · Cited by 31,038
Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
Wang, Q. H., Kalantar-Zadeh, K., Kis, A., Coleman, J. N., & Strano, M. S. (2012) · Nature Nanotechnology · doi:10.1038/nnano.2012.193 · Cited by 16,374
Physics of Semiconductor Devices
Sze, S. M., & Ng, K. K. (2006) · doi:10.1002/0470068329 · Cited by 14,627
Physics of Semiconductor Devices
(2002) · Kluwer Academic Publishers eBooks · doi:10.1007/b117561 · Cited by 13,963
Van der Waals heterostructures
Geim, A. K., & Grigorieva, I. V. (2013) · Nature · doi:10.1038/nature12385 · Cited by 10,875
Boron nitride substrates for high-quality graphene electronics
Dean, C. R., Young, A. F., Meric, I., Lee, C., Wang, L., Sorgenfrei, S., Watanabe, K., Taniguchi, T., Kim, P., Shepard, K. L., et al. (2010) · Nature Nanotechnology · doi:10.1038/nnano.2010.172 · Cited by 7,124
Self-citationThe nature of .pi.-.pi. interactions
Hunter, C. A., & Sanders, J. K. M. (1990) · Journal of the American Chemical Society · doi:10.1021/ja00170a016 · Cited by 5,353
Integrated Optoelectronic Devices Based on Conjugated Polymers
Sirringhaus, H., Tessler, N., & Friend, R. H. (1998) · Science · doi:10.1126/science.280.5370.1741 · Cited by 2,736
Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures
Britnell, L., Gorbachev, R. V., Jalil, R., Belle, B. D., Schedin, F., Mishchenko, A., Georgiou, T., Katsnelson, M. I., Eaves, L., Morozov, S. V., et al. (2012) · Science · doi:10.1126/science.1218461 · Cited by 2,561
General observation of n-type field-effect behaviour in organic semiconductors
Chua, L.-L., Zaumseil, J., Chang, J.-F., Ou, E. C.-W., Ho, P. K.-H., Sirringhaus, H., & Friend, R. H. (2005) · Nature · doi:10.1038/nature03376 · Cited by 2,264
Georgiou, T., Jalil, R., Belle, B. D., Britnell, L., Gorbachev, R. V., Morozov, S. V., Kim, Y.-J., Gholinia, A., Haigh, S. J., Makarovsky, O., et al. (2013) · Nature Nanotechnology · doi:10.1038/nnano.2012.224 · Cited by 1,751
Device Physics of Solution‐Processed Organic Field‐Effect Transistors
Sirringhaus, H. (2005) · Advanced Materials · doi:10.1002/adma.200501152 · Cited by 1,737
Inkjet printing of single-crystal films
Minemawari, H., Yamada, T., Matsui, H., Tsutsumi, J., Haas, S., Chiba, R., Kumai, R., & Hasegawa, T. (2011) · Nature · doi:10.1038/nature10313 · Cited by 1,707
Current saturation in zero-bandgap, top-gated graphene field-effect transistors
Meric, I., Han, M. Y., Young, A. F., Ozyilmaz, B., Kim, P., & Shepard, K. L. (2008) · Nature Nanotechnology · doi:10.1038/nnano.2008.268 · Cited by 1,634
Yuan, Y., Giri, G., Ayzner, A. L., Zoombelt, A. P., Mannsfeld, S. C. B., Chen, J., Nordlund, D., Toney, M. F., Huang, J., & Bao, Z. (2014) · Nature Communications · doi:10.1038/ncomms4005 · Cited by 1,360
Hopping transport through defect-induced localized states in molybdenum disulphide
Qiu, H., Xu, T., Wang, Z., Ren, W., Nan, H., Ni, Z., Chen, Q., Yuan, S., Miao, F., Song, F., et al. (2013) · Nature Communications · doi:10.1038/ncomms3642 · Cited by 1,193
Self-citationOrganic Transistors: Two-Dimensional Transport and Improved Electrical Characteristics
Dodabalapur, A., Torsi, L., & Katz, H. E. (1995) · Science · doi:10.1126/science.268.5208.270 · Cited by 991
Atomistic Processes in the Early Stages of Thin-Film Growth
Zhang, Z., & Lagally, M. G. (1997) · Science · doi:10.1126/science.276.5311.377 · Cited by 980
Graphene Barristor, a Triode Device with a Gate-Controlled Schottky Barrier
Yang, H., Heo, J., Park, S., Song, H. J., Seo, D. H., Byun, K.-E., Kim, P., Yoo, I., Chung, H.-J., & Kim, K. (2012) · Science · doi:10.1126/science.1220527 · Cited by 961
Yu, W. J., Li, Z., Zhou, H., Chen, Y., Wang, Y., Huang, Y., & Duan, X. (2013) · Nature Materials · doi:10.1038/nmat3518 · Cited by 934
Ambipolar Electrical Transport in Semiconducting Single-Wall Carbon Nanotubes
Martel, R., Derycke, V., Lavoie, C., Appenzeller, J., Chan, K. K., Tersoff, J., & Avouris, P. (2001) · Physical Review Letters · doi:10.1103/physrevlett.87.256805 · Cited by 803
Growth dynamics of pentacene thin films
zu Heringdorf, F. ‐. M., Reuter, M. C., & Tromp, R. M. (2001) · Nature · doi:10.1038/35087532 · Cited by 788
Spatially Correlated Charge Transport in Organic Thin Film Transistors
Dinelli, F., Murgia, M., Levy, P., Cavallini, M., Biscarini, F., & de Leeuw, D. M. (2004) · Physical Review Letters · doi:10.1103/physrevlett.92.116802 · Cited by 617
Van der Waals epitaxy—a new epitaxial growth method for a highly lattice-mismatched system
Koma, A. (1992) · Thin Solid Films · doi:10.1016/0040-6090(92)90872-9 · Cited by 615
Qiu, H., Pan, L., Yao, Z., Li, J., Shi, Y., & Wang, X. (2012) · Applied Physics Letters · doi:10.1063/1.3696045 · Cited by 586
Self-citationZhu, W., Low, T., Lee, Y.-H., Wang, H., Farmer, D. B., Kong, J., Xia, F., & Avouris, P. (2014) · Nature Communications · doi:10.1038/ncomms4087 · Cited by 467
Novoselov, K. (2007) · Nature Materials · doi:10.1038/nmat2006 · Cited by 419
Tsuzuki, S., Honda, K., Uchimaru, T., Mikami, M., & Tanabe, K. (2000) · Journal of the American Chemical Society · doi:10.1021/ja001901a · Cited by 403
Lee, W. H., Park, J., Sim, S. H., Lim, S., Kim, K. S., Hong, B. H., & Cho, K. (2011) · Journal of the American Chemical Society · doi:10.1021/ja1097463 · Cited by 337
Liu, H., Si, M., Najmaei, S., Neal, A. T., Du, Y., Ajayan, P. M., Lou, J., & Ye, P. D. (2013) · Nano Letters · doi:10.1021/nl400778q · Cited by 223
Mathijssen, S. G. J., Smits, E. C. P., van Hal, P. A., Wondergem, H. J., Ponomarenko, S. A., Moser, A., Resel, R., Bobbert, P. A., Kemerink, M., Janssen, R. A. J., et al. (2009) · Nature Nanotechnology · doi:10.1038/nnano.2009.201 · Cited by 132
Kobayashi, H., Kobayashi, N., Hosoi, S., Koshitani, N., Murakami, D., Shirasawa, R., Kudo, Y., Hobara, D., Tokita, Y., & Itabashi, M. (2013) · The Journal of Chemical Physics · doi:10.1063/1.4812389 · Cited by 130
Wang, X., Xu, J., Wang, C., Du, J., & Xie, W. (2011) · Advanced Materials · doi:10.1002/adma.201100476 · Cited by 116
Self-citationNon-natives: four risk factors
Lerdau, M., & Wickham, J. D. (2011) · Nature · doi:10.1038/475036d · Cited by 19
Cited by
Deng, W., Zhang, X., Huang, L., Xu, X., Wang, L., Wang, J., Shang, Q., Lee, S., & Jie, J. (2016) · Advanced Materials · doi:10.1002/adma.201505126 · Cited by 432
Self-citationAnalyzing the Carrier Mobility in Transition‐Metal Dichalcogenide MoS2 Field‐Effect Transistors
Yu, Z., Ong, Z., Li, S., Xu, J., Zhang, G., Zhang, Y., Shi, Y., & Wang, X. (2017) · Advanced Functional Materials · doi:10.1002/adfm.201604093 · Cited by 426
Self-citationGobbi, M., Orgiu, E., & Samorì, P. (2018) · Advanced Materials · doi:10.1002/adma.201706103 · Cited by 267
Metadata
- Authors
- He, D., Zhang, Y., Wu, Q., Xu, R., Nan, H., Liu, J., Yao, J., Wang, Z., Yuan, S., Li, Y., Shi, Y., Wang, J., Ni, Z., He, L., Miao, F., Song, F., Xu, H., Watanabe, K., Taniguchi, T., Xu, J.-B., & Wang, X.
- Venue
- Nature Communications
- Published
- 2014-10-21
- Volume
- 5
- Issue
- 1
- Pages
- 5162-5162
- ISSN
- 2041-1723 (ISSN-L)
- OpenAlex
- W2085460056
- Cited by
- 375
- References
- 38
- FWCI
- 16.27
- Type
- journal article
- Language
- en
- Open access
- bronze
About these checks
Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.
Statistics and arithmetic are recomputed, not judged.
Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.
What counts as a claim ›How we measure confidence ›How we check this ›
Are you an author, or do you see a problem with this page? Request a review
Data sources
Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.