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Cited by 444

The DOI matches its Crossref record; 50 of the 50 references it cites were found in a registry or an index.

Strong interface-induced spin–orbit interaction in graphene on WS2

Open access
Wang, Zhe, Ki, Dong–Keun, Chen, Hua, Berger, Helmuth, MacDonald, Allan H., Morpurgo, Alberto F.·2015·Nature Communications
DOI 10.1038/ncomms9339
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Abstract

Interfacial interactions allow the electronic properties of graphene to be modified, as recently demonstrated by the appearance of satellite Dirac cones in graphene on hexagonal boron nitride substrates. Ongoing research strives to explore interfacial interactions with other materials to engineer targeted electronic properties. Here we show that with a tungsten disulfide (WS 2) substrate, the strength of the spin–orbit interaction (SOI) in graphene is very strongly enhanced. The induced SOI leads to a pronounced low-temperature weak anti-localization effect and to a spin-relaxation time two to three orders of magnitude smaller than in graphene on conventional substrates. To interpret our findings we have performed first-principle electronic structure calculations, which confirm that carriers in graphene on WS 2 experience a strong SOI and allow us to extract a spin-dependent low-energy effective Hamiltonian. Our analysis shows that the use of WS 2 substrates opens a possible new route to access topological states of matter in graphene-based systems.

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Metadata

Authors
Wang, Z., Ki, D., Chen, H., Berger, H., MacDonald, A. H., & Morpurgo, A. F.
Venue
Nature Communications
Publisher
Springer Science and Business Media LLC
Published
2015-09-22
Volume
6
Issue
1
Pages
8339-8339
ISSN
2041-1723 (ISSN-L)
DOI
10.1038/ncomms9339
OpenAlex
W1953096683
Cited by
444
References
50
FWCI
16.52
Type
journal article
Language
en
Open access
gold

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